Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2

Y. J. Seo, K. C. Kim, H. D. Kim, M. S. Joo, H. M. An, T. G. Kim

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

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Physics & Astronomy