Correlation of surface morphology with chemical structures of sulfur-passivated GaAs(100) investigated by scanning tunneling microscopy and x-ray photoelectron spectroscopy

Jeong Sook Ha, Seong Ju Park, Sung Bock Kim, El Hang Lee

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The surface morphology and chemical structures of GaAs(100) after etching with sulfuric acid and sulfur passivation with ammonium sulfide [(NH 4) 2S x] solution were investigated using a scanning tunneling microscope and x-ray photoelectron spectroscopy (XPS). Depending on the chemical treatments which are routinely used in semiconductor processes, the surface morphology was observed to be quite different. The effects of water rinse, HCl treatment, and sulfur treatment time on the surface morphology were studied. Comparison of the surface morphology with chemical structures obtained by XPS was used to explain the evolution of surface morphology during the chemical treatments. In particular, a very flat surface with a surface undulation of ±6 Å was obtained by sulfur passivation with (NH 4) 2S x solution after chemical etching of a n-GaAs(100) wafer. These studies enable a better understanding of a correlation of the chemical structures with the surface morphology of the GaAs(100) surface on a nanometer scale.

Original languageEnglish
Pages (from-to)646-651
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume13
Issue number3
DOIs
Publication statusPublished - 1995 Dec 1
Externally publishedYes

Fingerprint

Scanning tunneling microscopy
Photoelectron spectroscopy
Sulfur
x ray spectroscopy
Surface morphology
scanning tunneling microscopy
sulfur
photoelectron spectroscopy
X rays
Passivation
Etching
passivity
etching
Sulfuric acid
gallium arsenide
Microscopes
sulfuric acid
Semiconductor materials
Scanning
sulfides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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abstract = "The surface morphology and chemical structures of GaAs(100) after etching with sulfuric acid and sulfur passivation with ammonium sulfide [(NH 4) 2S x] solution were investigated using a scanning tunneling microscope and x-ray photoelectron spectroscopy (XPS). Depending on the chemical treatments which are routinely used in semiconductor processes, the surface morphology was observed to be quite different. The effects of water rinse, HCl treatment, and sulfur treatment time on the surface morphology were studied. Comparison of the surface morphology with chemical structures obtained by XPS was used to explain the evolution of surface morphology during the chemical treatments. In particular, a very flat surface with a surface undulation of ±6 {\AA} was obtained by sulfur passivation with (NH 4) 2S x solution after chemical etching of a n-GaAs(100) wafer. These studies enable a better understanding of a correlation of the chemical structures with the surface morphology of the GaAs(100) surface on a nanometer scale.",
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AU - Lee, El Hang

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