Abstract
Poor crystallinity remains a major problem affecting the availability and cost of CdZnTe (CZT) detectors. Point defects are responsible for small gradual charge loss and correlated with the electron clouds' drift times, which allows electronic correction of the output signals to achieve high spectral-resolution even with large-volume CZT detectors. In contrast, extended defects causes significant charge losses, which typically are uncorrelated, and, thus, result in much greater fluctuations of the output signals that cannot be corrected. Although extended defects do not affect all the interaction events, their fraction rapidly increases with the crystal's thickness and volume. In this paper, we summarize our recent results from testing CZT material and detectors that emphasize the particular roles of two types of extended defects, and their contributions to the device's overall performance.
| Original language | English |
|---|---|
| Article number | 5960003 |
| Pages (from-to) | 1972-1980 |
| Number of pages | 9 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 58 |
| Issue number | 4 PART 2 |
| DOIs | |
| Publication status | Published - 2011 Aug 1 |
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Keywords
- CdZnTe
- crystal defects
- radiation detectors
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering
Cite this
Correlations between crystal defects and performance of CdZnTe detectors. / Bolotnikov, A. E.; Babalola, S.; Camarda, G. S.; Cui, Y.; Gul, R.; Egarievwe, S. U.; Fochuk, P. M.; Fuerstnau, M.; Horace, J.; Hossain, A.; Jones, F.; Kim, Kihyun; Kopach, O. V.; McCall, B.; Marchini, L.; Raghothamachar, B.; Taggart, R.; Yang, G.; Xu, L.; James, R. B.
In: IEEE Transactions on Nuclear Science, Vol. 58, No. 4 PART 2, 5960003, 01.08.2011, p. 1972-1980.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Correlations between crystal defects and performance of CdZnTe detectors
AU - Bolotnikov, A. E.
AU - Babalola, S.
AU - Camarda, G. S.
AU - Cui, Y.
AU - Gul, R.
AU - Egarievwe, S. U.
AU - Fochuk, P. M.
AU - Fuerstnau, M.
AU - Horace, J.
AU - Hossain, A.
AU - Jones, F.
AU - Kim, Kihyun
AU - Kopach, O. V.
AU - McCall, B.
AU - Marchini, L.
AU - Raghothamachar, B.
AU - Taggart, R.
AU - Yang, G.
AU - Xu, L.
AU - James, R. B.
PY - 2011/8/1
Y1 - 2011/8/1
N2 - Poor crystallinity remains a major problem affecting the availability and cost of CdZnTe (CZT) detectors. Point defects are responsible for small gradual charge loss and correlated with the electron clouds' drift times, which allows electronic correction of the output signals to achieve high spectral-resolution even with large-volume CZT detectors. In contrast, extended defects causes significant charge losses, which typically are uncorrelated, and, thus, result in much greater fluctuations of the output signals that cannot be corrected. Although extended defects do not affect all the interaction events, their fraction rapidly increases with the crystal's thickness and volume. In this paper, we summarize our recent results from testing CZT material and detectors that emphasize the particular roles of two types of extended defects, and their contributions to the device's overall performance.
AB - Poor crystallinity remains a major problem affecting the availability and cost of CdZnTe (CZT) detectors. Point defects are responsible for small gradual charge loss and correlated with the electron clouds' drift times, which allows electronic correction of the output signals to achieve high spectral-resolution even with large-volume CZT detectors. In contrast, extended defects causes significant charge losses, which typically are uncorrelated, and, thus, result in much greater fluctuations of the output signals that cannot be corrected. Although extended defects do not affect all the interaction events, their fraction rapidly increases with the crystal's thickness and volume. In this paper, we summarize our recent results from testing CZT material and detectors that emphasize the particular roles of two types of extended defects, and their contributions to the device's overall performance.
KW - CdZnTe
KW - crystal defects
KW - radiation detectors
UR - http://www.scopus.com/inward/record.url?scp=84860389591&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84860389591&partnerID=8YFLogxK
U2 - 10.1109/TNS.2011.2160283
DO - 10.1109/TNS.2011.2160283
M3 - Article
AN - SCOPUS:84860389591
VL - 58
SP - 1972
EP - 1980
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
SN - 0018-9499
IS - 4 PART 2
M1 - 5960003
ER -