Correlations between photoluminescence and Hall mobility in GaN/sapphire grown by metalorganic chemical vapor deposition

In-Hwan Lee, Cheul Ro Lee, Dong Chan Shin, Okhyun Nam, Yongjo Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have investigated photoluminescence (PL) and electron Hall mobility for unintentionally doped GaN epitaxial layers grown by low-pressure metalorganic chemical vapor deposition on c-plane Al2O3 substrates. Four GaN films having identical dislocation density but remarkably different electron Hall mobility were exploited. At low temperature (12K), a PL line associated with a bound exciton was observed and strong correlations were found between the Hall mobility and the PL intensity of the exciton transition. That is, relative PL intensity of the bound exciton to a donor-bound exciton monotonously increased with decreasing the electron mobility of the GaN films. This correlation was interpreted in terms of electrical compensation. Efforts to find the chemical origin of the PL line led to the conclusion that the BE line originated neither from threading dislocations nor from extrinsic point defects. Intrinsic acceptors such as Ga vacancy and GaN anti-site were suspected as plausible origin.

Original languageEnglish
Pages (from-to)304-308
Number of pages5
JournalJournal of Crystal Growth
Volume260
Issue number3-4
DOIs
Publication statusPublished - 2004 Jan 9
Externally publishedYes

Fingerprint

Hall mobility
Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
metalorganic chemical vapor deposition
Photoluminescence
sapphire
Excitons
photoluminescence
excitons
Low pressure chemical vapor deposition
Electrons
Electron mobility
Epitaxial layers
Point defects
Electron transitions
Dislocations (crystals)
electron mobility
point defects
Vacancies

Keywords

  • A1. Photoluminescence
  • A3. Metalorganic chemical vapor deposition
  • B1. GaN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Correlations between photoluminescence and Hall mobility in GaN/sapphire grown by metalorganic chemical vapor deposition. / Lee, In-Hwan; Lee, Cheul Ro; Shin, Dong Chan; Nam, Okhyun; Park, Yongjo.

In: Journal of Crystal Growth, Vol. 260, No. 3-4, 09.01.2004, p. 304-308.

Research output: Contribution to journalArticle

Lee, In-Hwan ; Lee, Cheul Ro ; Shin, Dong Chan ; Nam, Okhyun ; Park, Yongjo. / Correlations between photoluminescence and Hall mobility in GaN/sapphire grown by metalorganic chemical vapor deposition. In: Journal of Crystal Growth. 2004 ; Vol. 260, No. 3-4. pp. 304-308.
@article{312b0e46f35d465684f7a220c537cfca,
title = "Correlations between photoluminescence and Hall mobility in GaN/sapphire grown by metalorganic chemical vapor deposition",
abstract = "We have investigated photoluminescence (PL) and electron Hall mobility for unintentionally doped GaN epitaxial layers grown by low-pressure metalorganic chemical vapor deposition on c-plane Al2O3 substrates. Four GaN films having identical dislocation density but remarkably different electron Hall mobility were exploited. At low temperature (12K), a PL line associated with a bound exciton was observed and strong correlations were found between the Hall mobility and the PL intensity of the exciton transition. That is, relative PL intensity of the bound exciton to a donor-bound exciton monotonously increased with decreasing the electron mobility of the GaN films. This correlation was interpreted in terms of electrical compensation. Efforts to find the chemical origin of the PL line led to the conclusion that the BE line originated neither from threading dislocations nor from extrinsic point defects. Intrinsic acceptors such as Ga vacancy and GaN anti-site were suspected as plausible origin.",
keywords = "A1. Photoluminescence, A3. Metalorganic chemical vapor deposition, B1. GaN",
author = "In-Hwan Lee and Lee, {Cheul Ro} and Shin, {Dong Chan} and Okhyun Nam and Yongjo Park",
year = "2004",
month = "1",
day = "9",
doi = "10.1016/j.jcrysgro.2003.08.040",
language = "English",
volume = "260",
pages = "304--308",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "3-4",

}

TY - JOUR

T1 - Correlations between photoluminescence and Hall mobility in GaN/sapphire grown by metalorganic chemical vapor deposition

AU - Lee, In-Hwan

AU - Lee, Cheul Ro

AU - Shin, Dong Chan

AU - Nam, Okhyun

AU - Park, Yongjo

PY - 2004/1/9

Y1 - 2004/1/9

N2 - We have investigated photoluminescence (PL) and electron Hall mobility for unintentionally doped GaN epitaxial layers grown by low-pressure metalorganic chemical vapor deposition on c-plane Al2O3 substrates. Four GaN films having identical dislocation density but remarkably different electron Hall mobility were exploited. At low temperature (12K), a PL line associated with a bound exciton was observed and strong correlations were found between the Hall mobility and the PL intensity of the exciton transition. That is, relative PL intensity of the bound exciton to a donor-bound exciton monotonously increased with decreasing the electron mobility of the GaN films. This correlation was interpreted in terms of electrical compensation. Efforts to find the chemical origin of the PL line led to the conclusion that the BE line originated neither from threading dislocations nor from extrinsic point defects. Intrinsic acceptors such as Ga vacancy and GaN anti-site were suspected as plausible origin.

AB - We have investigated photoluminescence (PL) and electron Hall mobility for unintentionally doped GaN epitaxial layers grown by low-pressure metalorganic chemical vapor deposition on c-plane Al2O3 substrates. Four GaN films having identical dislocation density but remarkably different electron Hall mobility were exploited. At low temperature (12K), a PL line associated with a bound exciton was observed and strong correlations were found between the Hall mobility and the PL intensity of the exciton transition. That is, relative PL intensity of the bound exciton to a donor-bound exciton monotonously increased with decreasing the electron mobility of the GaN films. This correlation was interpreted in terms of electrical compensation. Efforts to find the chemical origin of the PL line led to the conclusion that the BE line originated neither from threading dislocations nor from extrinsic point defects. Intrinsic acceptors such as Ga vacancy and GaN anti-site were suspected as plausible origin.

KW - A1. Photoluminescence

KW - A3. Metalorganic chemical vapor deposition

KW - B1. GaN

UR - http://www.scopus.com/inward/record.url?scp=0345602973&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0345602973&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2003.08.040

DO - 10.1016/j.jcrysgro.2003.08.040

M3 - Article

AN - SCOPUS:0345602973

VL - 260

SP - 304

EP - 308

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3-4

ER -