Corrigendum to “Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells” [J. Alloy. Compd. 868 (2021) 159211] (Journal of Alloys and Compounds (2021) 868, (S0925838821006198), (10.1016/j.jallcom.2021.159211))

A. Y. Polyakov, L. A. Alexanyan, M. L. Skorikov, A. V. Chernykh, I. V. Shchemerov, V. N. Murashev, Tae Hwan Kim, In Hwan Lee, S. J. Pearton

Research output: Contribution to journalComment/debatepeer-review

Abstract

The authors regret author In-Hwan Lee's affiliation was incorrectly shown in the original version. The authors would like to apologise for any inconvenience caused. https://doi.org/10.1016/j.jallcom.2021.159211.

Original languageEnglish
Article number161947
JournalJournal of Alloys and Compounds
Volume888
DOIs
Publication statusPublished - 2021 Dec 25

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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