Coulomb blockade devices of Co dot arrays on tungsten-nanowire templates fabricated by using only a thin film technique

Yun-Hi Lee, Dong Ho Kim, Kyung Sik Shin, Chang Hoon Choi, Yoon Taek Jang, Byeong Kwon Ju

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The gate-controlled nanodevices were fabricated using conventional photolithography and a thin film technique. The Coulomb gap progressively decreases and disappears at a temperature of about 200 K. The measurements show that the behaviors of the Co dots on the straight tungsten-nanowire template are due to junction barriers related to Co islands as in usual single electron tunneling (SET) devices.

Original languageEnglish
Pages (from-to)3535-3537
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number20
DOIs
Publication statusPublished - 2003 May 19

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photolithography
electron tunneling
tungsten
nanowires
templates
thin films
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Coulomb blockade devices of Co dot arrays on tungsten-nanowire templates fabricated by using only a thin film technique. / Lee, Yun-Hi; Kim, Dong Ho; Shin, Kyung Sik; Choi, Chang Hoon; Jang, Yoon Taek; Ju, Byeong Kwon.

In: Applied Physics Letters, Vol. 82, No. 20, 19.05.2003, p. 3535-3537.

Research output: Contribution to journalArticle

Lee, Yun-Hi ; Kim, Dong Ho ; Shin, Kyung Sik ; Choi, Chang Hoon ; Jang, Yoon Taek ; Ju, Byeong Kwon. / Coulomb blockade devices of Co dot arrays on tungsten-nanowire templates fabricated by using only a thin film technique. In: Applied Physics Letters. 2003 ; Vol. 82, No. 20. pp. 3535-3537.
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