Coulomb blockade devices of Co dot arrays on tungsten-nanowire templates fabricated by using only a thin film technique

Yun-Hi Lee, Dong Ho Kim, Kyung Sik Shin, Chang Hoon Choi, Yoon Taek Jang, Byeong Kwon Ju

Research output: Contribution to journalArticle

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The gate-controlled nanodevices were fabricated using conventional photolithography and a thin film technique. The Coulomb gap progressively decreases and disappears at a temperature of about 200 K. The measurements show that the behaviors of the Co dots on the straight tungsten-nanowire template are due to junction barriers related to Co islands as in usual single electron tunneling (SET) devices.

Original languageEnglish
Pages (from-to)3535-3537
Number of pages3
JournalApplied Physics Letters
Issue number20
Publication statusPublished - 2003 May 19


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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