Coulomb staircases by lateral tunneling between adjacent nanoclusters formed on Si surfaces

Kang Ho Park, Jeong Sook Ha, Wan Soo Yun, Mincheol Shin, Young Jo Ko

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5 Citations (Scopus)

Abstract

Through the field induced manipulation of clusters and the systematic analysis of tunneling I-V characteristics on clusters formed on Sb-terminated Si(100) surfaces, it is found that the lateral tunneling between the adjacent clusters is a major conduction mechanism for the appearance of Coulomb staircases in tunneling I-V characteristics. Furthermore, by using the newly devised I-V sweep modes, it is found that Coulomb staircases could also result from the cluster-coated tip. It is also observed that current oscillations give rise to the staircase-like features but should be distinguished from the real Coulomb staircases. These results will be very useful in understanding the tunneling I-V data with a STM facility.

Original languageEnglish
Pages (from-to)2365-2370
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number5
DOIs
Publication statusPublished - 2000 Sep 1
Externally publishedYes

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Coulomb staircases by lateral tunneling between adjacent nanoclusters formed on Si surfaces. / Park, Kang Ho; Ha, Jeong Sook; Yun, Wan Soo; Shin, Mincheol; Ko, Young Jo.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 5, 01.09.2000, p. 2365-2370.

Research output: Contribution to journalArticle

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