Coupled II-VI semiconductor quantum dots: Manipulation of spin polarization by inter-dot exchange interaction

Sang Hoon Lee, J. K. Furdyna, M. Dobrowolska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We have studied self-assembled QDs in the form of single- and double-QD layer systems. The double layers were formed either from CdSe and CdZnSe layers, or from CdSe and CdZnMnSe layers, separated by ZnSe barriers. When a magnetic field is applied to the CdSe/CdZnSe double-QD layer, the intensities of the circularly polarized PL peaks corresponding to the CdSe and CdZnSe layers exhibit significant differences, reflecting correspondingly large differences in the degrees of spin polarization of the CdSe and the CdZnSe QDs. This contrasts with the PL observed on single-layer CdSe or CdZnSe QD reference structures, both of which show nearly identical dependences on the field. The behavior observed on the double-layer QD structures is interpreted in terms of anti-parallel spin interaction between carriers localized in the coupled QD pairs. Such spin interaction is even more pronounced in double-layer structures in which CdZnMnSe QW or QDs are used instead of CdZnSe QDs, reflecting the high potential of magnetic quantum structures in the context of spin-polarized applications.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages1085-1097
Number of pages13
Volume2
Edition3
DOIs
Publication statusPublished - 2005

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manipulators
quantum dots
polarization
interactions
magnetic fields

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Lee, S. H., Furdyna, J. K., & Dobrowolska, M. (2005). Coupled II-VI semiconductor quantum dots: Manipulation of spin polarization by inter-dot exchange interaction. In Physica Status Solidi C: Conferences (3 ed., Vol. 2, pp. 1085-1097) https://doi.org/10.1002/pssc.200460655

Coupled II-VI semiconductor quantum dots : Manipulation of spin polarization by inter-dot exchange interaction. / Lee, Sang Hoon; Furdyna, J. K.; Dobrowolska, M.

Physica Status Solidi C: Conferences. Vol. 2 3. ed. 2005. p. 1085-1097.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, SH, Furdyna, JK & Dobrowolska, M 2005, Coupled II-VI semiconductor quantum dots: Manipulation of spin polarization by inter-dot exchange interaction. in Physica Status Solidi C: Conferences. 3 edn, vol. 2, pp. 1085-1097. https://doi.org/10.1002/pssc.200460655
Lee SH, Furdyna JK, Dobrowolska M. Coupled II-VI semiconductor quantum dots: Manipulation of spin polarization by inter-dot exchange interaction. In Physica Status Solidi C: Conferences. 3 ed. Vol. 2. 2005. p. 1085-1097 https://doi.org/10.1002/pssc.200460655
Lee, Sang Hoon ; Furdyna, J. K. ; Dobrowolska, M. / Coupled II-VI semiconductor quantum dots : Manipulation of spin polarization by inter-dot exchange interaction. Physica Status Solidi C: Conferences. Vol. 2 3. ed. 2005. pp. 1085-1097
@inproceedings{7fc84ec01c164e7399223f807dd4b63d,
title = "Coupled II-VI semiconductor quantum dots: Manipulation of spin polarization by inter-dot exchange interaction",
abstract = "We have studied self-assembled QDs in the form of single- and double-QD layer systems. The double layers were formed either from CdSe and CdZnSe layers, or from CdSe and CdZnMnSe layers, separated by ZnSe barriers. When a magnetic field is applied to the CdSe/CdZnSe double-QD layer, the intensities of the circularly polarized PL peaks corresponding to the CdSe and CdZnSe layers exhibit significant differences, reflecting correspondingly large differences in the degrees of spin polarization of the CdSe and the CdZnSe QDs. This contrasts with the PL observed on single-layer CdSe or CdZnSe QD reference structures, both of which show nearly identical dependences on the field. The behavior observed on the double-layer QD structures is interpreted in terms of anti-parallel spin interaction between carriers localized in the coupled QD pairs. Such spin interaction is even more pronounced in double-layer structures in which CdZnMnSe QW or QDs are used instead of CdZnSe QDs, reflecting the high potential of magnetic quantum structures in the context of spin-polarized applications.",
author = "Lee, {Sang Hoon} and Furdyna, {J. K.} and M. Dobrowolska",
year = "2005",
doi = "10.1002/pssc.200460655",
language = "English",
volume = "2",
pages = "1085--1097",
booktitle = "Physica Status Solidi C: Conferences",
edition = "3",

}

TY - GEN

T1 - Coupled II-VI semiconductor quantum dots

T2 - Manipulation of spin polarization by inter-dot exchange interaction

AU - Lee, Sang Hoon

AU - Furdyna, J. K.

AU - Dobrowolska, M.

PY - 2005

Y1 - 2005

N2 - We have studied self-assembled QDs in the form of single- and double-QD layer systems. The double layers were formed either from CdSe and CdZnSe layers, or from CdSe and CdZnMnSe layers, separated by ZnSe barriers. When a magnetic field is applied to the CdSe/CdZnSe double-QD layer, the intensities of the circularly polarized PL peaks corresponding to the CdSe and CdZnSe layers exhibit significant differences, reflecting correspondingly large differences in the degrees of spin polarization of the CdSe and the CdZnSe QDs. This contrasts with the PL observed on single-layer CdSe or CdZnSe QD reference structures, both of which show nearly identical dependences on the field. The behavior observed on the double-layer QD structures is interpreted in terms of anti-parallel spin interaction between carriers localized in the coupled QD pairs. Such spin interaction is even more pronounced in double-layer structures in which CdZnMnSe QW or QDs are used instead of CdZnSe QDs, reflecting the high potential of magnetic quantum structures in the context of spin-polarized applications.

AB - We have studied self-assembled QDs in the form of single- and double-QD layer systems. The double layers were formed either from CdSe and CdZnSe layers, or from CdSe and CdZnMnSe layers, separated by ZnSe barriers. When a magnetic field is applied to the CdSe/CdZnSe double-QD layer, the intensities of the circularly polarized PL peaks corresponding to the CdSe and CdZnSe layers exhibit significant differences, reflecting correspondingly large differences in the degrees of spin polarization of the CdSe and the CdZnSe QDs. This contrasts with the PL observed on single-layer CdSe or CdZnSe QD reference structures, both of which show nearly identical dependences on the field. The behavior observed on the double-layer QD structures is interpreted in terms of anti-parallel spin interaction between carriers localized in the coupled QD pairs. Such spin interaction is even more pronounced in double-layer structures in which CdZnMnSe QW or QDs are used instead of CdZnSe QDs, reflecting the high potential of magnetic quantum structures in the context of spin-polarized applications.

UR - http://www.scopus.com/inward/record.url?scp=27344455704&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27344455704&partnerID=8YFLogxK

U2 - 10.1002/pssc.200460655

DO - 10.1002/pssc.200460655

M3 - Conference contribution

AN - SCOPUS:27344455704

VL - 2

SP - 1085

EP - 1097

BT - Physica Status Solidi C: Conferences

ER -