Abstract
The effect of the magnetization fluctuations on the resistivity of GaMnAs near the Curie temperature TC was experimentally studied. It is shown that the determination of TC from the maximum of the temperature derivative of the resistivity is valid for the samples with a high concentration of free carries. Whereas, for the samples with low concentration of free carriers the TC coincides with the resistivity maximum. The magnetic specific heat for T>TC demonstrates the crossover from the one dimensional to the three dimensional critical behavior when the temperature become closer to the Curie temperature. This is explained by the formation of the ferromagnetic phase in the paramagnetic side of the phase transition which is started from Mn-Mn dimers oriented along one direction.
| Original language | English |
|---|---|
| Pages (from-to) | 38-41 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 263 |
| DOIs | |
| Publication status | Published - 2017 Sep 1 |
Fingerprint
Keywords
- Critical behavior
- Diluted magnetic semiconductor
- GaMnAs
- Phase transition
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
Cite this
Critical behavior of the resistivity of GaMnAs near the Curie temperature. / Yuldashev, Sh U.; Yunusov, Z. A.; Kwon, Y. H.; Lee, Sang Hoon; Ahuja, R.; Kang, T. W.
In: Solid State Communications, Vol. 263, 01.09.2017, p. 38-41.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Critical behavior of the resistivity of GaMnAs near the Curie temperature
AU - Yuldashev, Sh U.
AU - Yunusov, Z. A.
AU - Kwon, Y. H.
AU - Lee, Sang Hoon
AU - Ahuja, R.
AU - Kang, T. W.
PY - 2017/9/1
Y1 - 2017/9/1
N2 - The effect of the magnetization fluctuations on the resistivity of GaMnAs near the Curie temperature TC was experimentally studied. It is shown that the determination of TC from the maximum of the temperature derivative of the resistivity is valid for the samples with a high concentration of free carries. Whereas, for the samples with low concentration of free carriers the TC coincides with the resistivity maximum. The magnetic specific heat for T>TC demonstrates the crossover from the one dimensional to the three dimensional critical behavior when the temperature become closer to the Curie temperature. This is explained by the formation of the ferromagnetic phase in the paramagnetic side of the phase transition which is started from Mn-Mn dimers oriented along one direction.
AB - The effect of the magnetization fluctuations on the resistivity of GaMnAs near the Curie temperature TC was experimentally studied. It is shown that the determination of TC from the maximum of the temperature derivative of the resistivity is valid for the samples with a high concentration of free carries. Whereas, for the samples with low concentration of free carriers the TC coincides with the resistivity maximum. The magnetic specific heat for T>TC demonstrates the crossover from the one dimensional to the three dimensional critical behavior when the temperature become closer to the Curie temperature. This is explained by the formation of the ferromagnetic phase in the paramagnetic side of the phase transition which is started from Mn-Mn dimers oriented along one direction.
KW - Critical behavior
KW - Diluted magnetic semiconductor
KW - GaMnAs
KW - Phase transition
UR - http://www.scopus.com/inward/record.url?scp=85025074037&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85025074037&partnerID=8YFLogxK
U2 - 10.1016/j.ssc.2017.07.005
DO - 10.1016/j.ssc.2017.07.005
M3 - Article
AN - SCOPUS:85025074037
VL - 263
SP - 38
EP - 41
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
ER -