Critical behavior of the resistivity of GaMnAs near the Curie temperature

Sh U. Yuldashev; Z. A. Yunusov; Y. H. Kwon; S. H. Lee; R. Ahuja; T. W. Kang

doi:10.1016/j.ssc.2017.07.005

Critical behavior of the resistivity of GaMnAs near the Curie temperature

Sh U. Yuldashev, Z. A. Yunusov, Y. H. Kwon, S. H. Lee, R. Ahuja, T. W. Kang

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The effect of the magnetization fluctuations on the resistivity of GaMnAs near the Curie temperature T_C was experimentally studied. It is shown that the determination of T_C from the maximum of the temperature derivative of the resistivity is valid for the samples with a high concentration of free carries. Whereas, for the samples with low concentration of free carriers the T_C coincides with the resistivity maximum. The magnetic specific heat for T>T_C demonstrates the crossover from the one dimensional to the three dimensional critical behavior when the temperature become closer to the Curie temperature. This is explained by the formation of the ferromagnetic phase in the paramagnetic side of the phase transition which is started from Mn-Mn dimers oriented along one direction.

Original language	English
Pages (from-to)	38-41
Number of pages	4
Journal	Solid State Communications
Volume	263
DOIs	https://doi.org/10.1016/j.ssc.2017.07.005
Publication status	Published - 2017 Sep

Keywords

Critical behavior
Diluted magnetic semiconductor
GaMnAs
Phase transition

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2017.07.005

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@article{a00307f3481e48f588c92e8c71f7c659,

title = "Critical behavior of the resistivity of GaMnAs near the Curie temperature",

abstract = "The effect of the magnetization fluctuations on the resistivity of GaMnAs near the Curie temperature TC was experimentally studied. It is shown that the determination of TC from the maximum of the temperature derivative of the resistivity is valid for the samples with a high concentration of free carries. Whereas, for the samples with low concentration of free carriers the TC coincides with the resistivity maximum. The magnetic specific heat for T>TC demonstrates the crossover from the one dimensional to the three dimensional critical behavior when the temperature become closer to the Curie temperature. This is explained by the formation of the ferromagnetic phase in the paramagnetic side of the phase transition which is started from Mn-Mn dimers oriented along one direction.",

keywords = "Critical behavior, Diluted magnetic semiconductor, GaMnAs, Phase transition",

author = "Yuldashev, {Sh U.} and Yunusov, {Z. A.} and Kwon, {Y. H.} and Lee, {S. H.} and R. Ahuja and Kang, {T. W.}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2014R1A2A1A12066298) and by Basic Science Research Program through the NRF funded by the Ministry of Education (2016R1A6A1A03012877). Publisher Copyright: {\textcopyright} 2017",

year = "2017",

month = sep,

doi = "10.1016/j.ssc.2017.07.005",

language = "English",

volume = "263",

pages = "38--41",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Critical behavior of the resistivity of GaMnAs near the Curie temperature

AU - Yuldashev, Sh U.

AU - Yunusov, Z. A.

AU - Kwon, Y. H.

AU - Lee, S. H.

AU - Ahuja, R.

AU - Kang, T. W.

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2014R1A2A1A12066298) and by Basic Science Research Program through the NRF funded by the Ministry of Education (2016R1A6A1A03012877). Publisher Copyright: © 2017

PY - 2017/9

Y1 - 2017/9

N2 - The effect of the magnetization fluctuations on the resistivity of GaMnAs near the Curie temperature TC was experimentally studied. It is shown that the determination of TC from the maximum of the temperature derivative of the resistivity is valid for the samples with a high concentration of free carries. Whereas, for the samples with low concentration of free carriers the TC coincides with the resistivity maximum. The magnetic specific heat for T>TC demonstrates the crossover from the one dimensional to the three dimensional critical behavior when the temperature become closer to the Curie temperature. This is explained by the formation of the ferromagnetic phase in the paramagnetic side of the phase transition which is started from Mn-Mn dimers oriented along one direction.

AB - The effect of the magnetization fluctuations on the resistivity of GaMnAs near the Curie temperature TC was experimentally studied. It is shown that the determination of TC from the maximum of the temperature derivative of the resistivity is valid for the samples with a high concentration of free carries. Whereas, for the samples with low concentration of free carriers the TC coincides with the resistivity maximum. The magnetic specific heat for T>TC demonstrates the crossover from the one dimensional to the three dimensional critical behavior when the temperature become closer to the Curie temperature. This is explained by the formation of the ferromagnetic phase in the paramagnetic side of the phase transition which is started from Mn-Mn dimers oriented along one direction.

KW - Critical behavior

KW - Diluted magnetic semiconductor

KW - GaMnAs

KW - Phase transition

UR - http://www.scopus.com/inward/record.url?scp=85025074037&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2017.07.005

DO - 10.1016/j.ssc.2017.07.005

M3 - Article

AN - SCOPUS:85025074037

VL - 263

SP - 38

EP - 41

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

ER -

Critical behavior of the resistivity of GaMnAs near the Curie temperature

Abstract

Keywords

ASJC Scopus subject areas

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