Critical behavior of the resistivity of GaMnAs near the Curie temperature

Sh U. Yuldashev, Z. A. Yunusov, Y. H. Kwon, Sang Hoon Lee, R. Ahuja, T. W. Kang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effect of the magnetization fluctuations on the resistivity of GaMnAs near the Curie temperature TC was experimentally studied. It is shown that the determination of TC from the maximum of the temperature derivative of the resistivity is valid for the samples with a high concentration of free carries. Whereas, for the samples with low concentration of free carriers the TC coincides with the resistivity maximum. The magnetic specific heat for T>TC demonstrates the crossover from the one dimensional to the three dimensional critical behavior when the temperature become closer to the Curie temperature. This is explained by the formation of the ferromagnetic phase in the paramagnetic side of the phase transition which is started from Mn-Mn dimers oriented along one direction.

Original languageEnglish
Pages (from-to)38-41
Number of pages4
JournalSolid State Communications
Volume263
DOIs
Publication statusPublished - 2017 Sep 1

Fingerprint

Curie temperature
electrical resistivity
Dimers
Specific heat
Magnetization
Phase transitions
Derivatives
Temperature
low concentrations
crossovers
dimers
specific heat
magnetization
temperature
Direction compound

Keywords

  • Critical behavior
  • Diluted magnetic semiconductor
  • GaMnAs
  • Phase transition

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Critical behavior of the resistivity of GaMnAs near the Curie temperature. / Yuldashev, Sh U.; Yunusov, Z. A.; Kwon, Y. H.; Lee, Sang Hoon; Ahuja, R.; Kang, T. W.

In: Solid State Communications, Vol. 263, 01.09.2017, p. 38-41.

Research output: Contribution to journalArticle

Yuldashev, Sh U. ; Yunusov, Z. A. ; Kwon, Y. H. ; Lee, Sang Hoon ; Ahuja, R. ; Kang, T. W. / Critical behavior of the resistivity of GaMnAs near the Curie temperature. In: Solid State Communications. 2017 ; Vol. 263. pp. 38-41.
@article{a00307f3481e48f588c92e8c71f7c659,
title = "Critical behavior of the resistivity of GaMnAs near the Curie temperature",
abstract = "The effect of the magnetization fluctuations on the resistivity of GaMnAs near the Curie temperature TC was experimentally studied. It is shown that the determination of TC from the maximum of the temperature derivative of the resistivity is valid for the samples with a high concentration of free carries. Whereas, for the samples with low concentration of free carriers the TC coincides with the resistivity maximum. The magnetic specific heat for T>TC demonstrates the crossover from the one dimensional to the three dimensional critical behavior when the temperature become closer to the Curie temperature. This is explained by the formation of the ferromagnetic phase in the paramagnetic side of the phase transition which is started from Mn-Mn dimers oriented along one direction.",
keywords = "Critical behavior, Diluted magnetic semiconductor, GaMnAs, Phase transition",
author = "Yuldashev, {Sh U.} and Yunusov, {Z. A.} and Kwon, {Y. H.} and Lee, {Sang Hoon} and R. Ahuja and Kang, {T. W.}",
year = "2017",
month = "9",
day = "1",
doi = "10.1016/j.ssc.2017.07.005",
language = "English",
volume = "263",
pages = "38--41",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Critical behavior of the resistivity of GaMnAs near the Curie temperature

AU - Yuldashev, Sh U.

AU - Yunusov, Z. A.

AU - Kwon, Y. H.

AU - Lee, Sang Hoon

AU - Ahuja, R.

AU - Kang, T. W.

PY - 2017/9/1

Y1 - 2017/9/1

N2 - The effect of the magnetization fluctuations on the resistivity of GaMnAs near the Curie temperature TC was experimentally studied. It is shown that the determination of TC from the maximum of the temperature derivative of the resistivity is valid for the samples with a high concentration of free carries. Whereas, for the samples with low concentration of free carriers the TC coincides with the resistivity maximum. The magnetic specific heat for T>TC demonstrates the crossover from the one dimensional to the three dimensional critical behavior when the temperature become closer to the Curie temperature. This is explained by the formation of the ferromagnetic phase in the paramagnetic side of the phase transition which is started from Mn-Mn dimers oriented along one direction.

AB - The effect of the magnetization fluctuations on the resistivity of GaMnAs near the Curie temperature TC was experimentally studied. It is shown that the determination of TC from the maximum of the temperature derivative of the resistivity is valid for the samples with a high concentration of free carries. Whereas, for the samples with low concentration of free carriers the TC coincides with the resistivity maximum. The magnetic specific heat for T>TC demonstrates the crossover from the one dimensional to the three dimensional critical behavior when the temperature become closer to the Curie temperature. This is explained by the formation of the ferromagnetic phase in the paramagnetic side of the phase transition which is started from Mn-Mn dimers oriented along one direction.

KW - Critical behavior

KW - Diluted magnetic semiconductor

KW - GaMnAs

KW - Phase transition

UR - http://www.scopus.com/inward/record.url?scp=85025074037&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85025074037&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2017.07.005

DO - 10.1016/j.ssc.2017.07.005

M3 - Article

AN - SCOPUS:85025074037

VL - 263

SP - 38

EP - 41

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

ER -