Critical switching current and thermal stability of magnetic tunnel junctions with uncompensated CoFeB/Ru/CoFeB synthetic free layers

Tae Young Lee, Chiyui Ahn, Byoung Chul Min, Kyung Ho Shin, Jong Min Lee, Kyoung Jin Lee, Sang Ho Lim, Seung Young Park, Younghun Jo, Jürgen Langer, Berthold Ocker, Wolfram Maass

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Abstract

The critical switching current and thermal stability parameter are investigated for magnetic tunnel junctions with uncompensated synthetic ferrimagnetic free layers. The parameters are obtained by analyzing the experimental results for the thermally activated magnetization switching probability as functions of both a bias current and an applied magnetic field. The analysis is greatly facilitated by the use of an analytical equation for the applied magnetic field dependence of the energy barrier. A figure of merit given by the ratio of the two parameters differs substantially depending on the direction of the magnetization switching.

Original languageEnglish
Article number093906
JournalJournal of Applied Physics
Volume113
Issue number9
DOIs
Publication statusPublished - 2013 Mar 7

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Lee, T. Y., Ahn, C., Min, B. C., Shin, K. H., Lee, J. M., Lee, K. J., Lim, S. H., Park, S. Y., Jo, Y., Langer, J., Ocker, B., & Maass, W. (2013). Critical switching current and thermal stability of magnetic tunnel junctions with uncompensated CoFeB/Ru/CoFeB synthetic free layers. Journal of Applied Physics, 113(9), [093906]. https://doi.org/10.1063/1.4794340