Critical switching current and thermal stability of magnetic tunnel junctions with uncompensated CoFeB/Ru/CoFeB synthetic free layers

Tae Young Lee; Chiyui Ahn; Byoung Chul Min; Kyung Ho Shin; Jong Min Lee; Kyung Jin Lee; Sang Ho Lim; Seung Young Park; Younghun Jo; Jürgen Langer; Berthold Ocker; Wolfram Maass

doi:10.1063/1.4794340

Critical switching current and thermal stability of magnetic tunnel junctions with uncompensated CoFeB/Ru/CoFeB synthetic free layers

Tae Young Lee, Chiyui Ahn, Byoung Chul Min, Kyung Ho Shin, Jong Min Lee, Kyung Jin Lee, Sang Ho Lim, Seung Young Park, Younghun Jo, Jürgen Langer, Berthold Ocker, Wolfram Maass

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The critical switching current and thermal stability parameter are investigated for magnetic tunnel junctions with uncompensated synthetic ferrimagnetic free layers. The parameters are obtained by analyzing the experimental results for the thermally activated magnetization switching probability as functions of both a bias current and an applied magnetic field. The analysis is greatly facilitated by the use of an analytical equation for the applied magnetic field dependence of the energy barrier. A figure of merit given by the ratio of the two parameters differs substantially depending on the direction of the magnetization switching.

Original language	English
Article number	093906
Journal	Journal of Applied Physics
Volume	113
Issue number	9
DOIs	https://doi.org/10.1063/1.4794340
Publication status	Published - 2013 Mar 7

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.4794340

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title = "Critical switching current and thermal stability of magnetic tunnel junctions with uncompensated CoFeB/Ru/CoFeB synthetic free layers",

abstract = "The critical switching current and thermal stability parameter are investigated for magnetic tunnel junctions with uncompensated synthetic ferrimagnetic free layers. The parameters are obtained by analyzing the experimental results for the thermally activated magnetization switching probability as functions of both a bias current and an applied magnetic field. The analysis is greatly facilitated by the use of an analytical equation for the applied magnetic field dependence of the energy barrier. A figure of merit given by the ratio of the two parameters differs substantially depending on the direction of the magnetization switching.",

author = "Lee, {Tae Young} and Chiyui Ahn and Min, {Byoung Chul} and Shin, {Kyung Ho} and Lee, {Jong Min} and Lee, {Kyung Jin} and Lim, {Sang Ho} and Park, {Seung Young} and Younghun Jo and J{\"u}rgen Langer and Berthold Ocker and Wolfram Maass",

note = "Funding Information: This work was supported by the NRF grant funded by the MEST (2011-0028163), by the KIST Institutional Program, by the MEST Pioneer Research Center Program (2011-0027905), and by the NRF Grant No. 2010-0023798. Copyright: Copyright 2013 Elsevier B.V., All rights reserved.",

year = "2013",

month = mar,

day = "7",

doi = "10.1063/1.4794340",

language = "English",

volume = "113",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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T1 - Critical switching current and thermal stability of magnetic tunnel junctions with uncompensated CoFeB/Ru/CoFeB synthetic free layers

AU - Lee, Tae Young

AU - Ahn, Chiyui

AU - Min, Byoung Chul

AU - Shin, Kyung Ho

AU - Lee, Jong Min

AU - Lee, Kyung Jin

AU - Lim, Sang Ho

AU - Park, Seung Young

AU - Jo, Younghun

AU - Langer, Jürgen

AU - Ocker, Berthold

AU - Maass, Wolfram

N1 - Funding Information: This work was supported by the NRF grant funded by the MEST (2011-0028163), by the KIST Institutional Program, by the MEST Pioneer Research Center Program (2011-0027905), and by the NRF Grant No. 2010-0023798. Copyright: Copyright 2013 Elsevier B.V., All rights reserved.

PY - 2013/3/7

Y1 - 2013/3/7

N2 - The critical switching current and thermal stability parameter are investigated for magnetic tunnel junctions with uncompensated synthetic ferrimagnetic free layers. The parameters are obtained by analyzing the experimental results for the thermally activated magnetization switching probability as functions of both a bias current and an applied magnetic field. The analysis is greatly facilitated by the use of an analytical equation for the applied magnetic field dependence of the energy barrier. A figure of merit given by the ratio of the two parameters differs substantially depending on the direction of the magnetization switching.

AB - The critical switching current and thermal stability parameter are investigated for magnetic tunnel junctions with uncompensated synthetic ferrimagnetic free layers. The parameters are obtained by analyzing the experimental results for the thermally activated magnetization switching probability as functions of both a bias current and an applied magnetic field. The analysis is greatly facilitated by the use of an analytical equation for the applied magnetic field dependence of the energy barrier. A figure of merit given by the ratio of the two parameters differs substantially depending on the direction of the magnetization switching.

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Critical switching current and thermal stability of magnetic tunnel junctions with uncompensated CoFeB/Ru/CoFeB synthetic free layers

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