Critical switching current density induced by spin Hall effect in magnetic structures with first-and second-order perpendicular magnetic anisotropy

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Abstract

In this study, we derive analytical expressions for the critical switching current density induced by spin Hall effect in magnetic structures with the first-and second-order perpendicular magnetic anisotropy. We confirm the validity of the expressions by comparing the analytical results with those obtained from a macrospin simulation. Moreover, we find that for a particular thermal stability parameter, the switching current density can be minimized for a slightly positive second-order perpendicular magnetic anisotropy and the minimum switching current density can further be tuned using an external magnetic field. The analytical expressions are of considerable value in designing high-density magnetic random access memory and cryogenic memory.

Original languageEnglish
Article number15314
JournalScientific Reports
Volume7
Issue number1
DOIs
Publication statusPublished - 2017 Dec 1

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Hall effect
current density
anisotropy
random access memory
cryogenics
thermal stability
magnetic fields
simulation

ASJC Scopus subject areas

  • General

Cite this

@article{62869989f14a413dbb3c8c06c4649d82,
title = "Critical switching current density induced by spin Hall effect in magnetic structures with first-and second-order perpendicular magnetic anisotropy",
abstract = "In this study, we derive analytical expressions for the critical switching current density induced by spin Hall effect in magnetic structures with the first-and second-order perpendicular magnetic anisotropy. We confirm the validity of the expressions by comparing the analytical results with those obtained from a macrospin simulation. Moreover, we find that for a particular thermal stability parameter, the switching current density can be minimized for a slightly positive second-order perpendicular magnetic anisotropy and the minimum switching current density can further be tuned using an external magnetic field. The analytical expressions are of considerable value in designing high-density magnetic random access memory and cryogenic memory.",
author = "Yun, {Seok Jin} and Lee, {Kyoung Jin} and Lim, {Sang Ho}",
year = "2017",
month = "12",
day = "1",
doi = "10.1038/s41598-017-15681-2",
language = "English",
volume = "7",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

TY - JOUR

T1 - Critical switching current density induced by spin Hall effect in magnetic structures with first-and second-order perpendicular magnetic anisotropy

AU - Yun, Seok Jin

AU - Lee, Kyoung Jin

AU - Lim, Sang Ho

PY - 2017/12/1

Y1 - 2017/12/1

N2 - In this study, we derive analytical expressions for the critical switching current density induced by spin Hall effect in magnetic structures with the first-and second-order perpendicular magnetic anisotropy. We confirm the validity of the expressions by comparing the analytical results with those obtained from a macrospin simulation. Moreover, we find that for a particular thermal stability parameter, the switching current density can be minimized for a slightly positive second-order perpendicular magnetic anisotropy and the minimum switching current density can further be tuned using an external magnetic field. The analytical expressions are of considerable value in designing high-density magnetic random access memory and cryogenic memory.

AB - In this study, we derive analytical expressions for the critical switching current density induced by spin Hall effect in magnetic structures with the first-and second-order perpendicular magnetic anisotropy. We confirm the validity of the expressions by comparing the analytical results with those obtained from a macrospin simulation. Moreover, we find that for a particular thermal stability parameter, the switching current density can be minimized for a slightly positive second-order perpendicular magnetic anisotropy and the minimum switching current density can further be tuned using an external magnetic field. The analytical expressions are of considerable value in designing high-density magnetic random access memory and cryogenic memory.

UR - http://www.scopus.com/inward/record.url?scp=85033580412&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85033580412&partnerID=8YFLogxK

U2 - 10.1038/s41598-017-15681-2

DO - 10.1038/s41598-017-15681-2

M3 - Article

C2 - 29127357

AN - SCOPUS:85033580412

VL - 7

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 15314

ER -