Cross-sectional thermal imaging of a metal-oxide-semiconductor field-effect transistor

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Understanding of heat generation in semiconductor devices is important in the thermal management of integrated circuits and in the analysis of the device physics. Scanning thermal microscopy was used to measure the temperature distribution of the cross-section of an operating metal-oxide-semiconductor field-effect transistor (MOSFET). The temperature distributions were measured both in DC and AC modes in order to take account of the leakage current. The location of the maximum temperature was observed to approach the drain as the drain bias was increased.

Original languageEnglish
Pages (from-to)349-354
Number of pages6
JournalMicroscale Thermophysical Engineering
Volume7
Issue number4
DOIs
Publication statusPublished - 2003 Jan 1

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science (miscellaneous)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Physics and Astronomy (miscellaneous)

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