Cross-sectional thermal imaging of a metaloxide-semiconductor field-effect transistor

Oh Myoung Kwon, Arun Majumdar

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Understanding of heat generation in semiconductor devices is important in the thermal management of integrated circuits and in the analysis of the device physics. Scanning thermal microscopy was used to measure the temperature distribution of the cross-section of an operating metal-oxide-senriconductor field-effect transistor (MOSFET). The temperature distributions were measured both in DC and AC modes in order to take account of the leakage current. The location of the maximum temperature was observed to approach the drain as the drain bias was increased.

Original languageEnglish
Pages (from-to)349-354
Number of pages6
JournalMicroscale Thermophysical Engineering
Volume7
Issue number4
Publication statusPublished - 2003 Oct 1

Fingerprint

Infrared imaging
Field effect transistors
Temperature distribution
temperature distribution
field effect transistors
Semiconductor materials
heat generation
Heat generation
Semiconductor devices
semiconductor devices
Temperature control
Leakage currents
Oxides
integrated circuits
metal oxides
Integrated circuits
alternating current
Microscopic examination
leakage
Physics

ASJC Scopus subject areas

  • Mechanical Engineering
  • Materials Science (miscellaneous)
  • Physics and Astronomy (miscellaneous)

Cite this

Cross-sectional thermal imaging of a metaloxide-semiconductor field-effect transistor. / Kwon, Oh Myoung; Majumdar, Arun.

In: Microscale Thermophysical Engineering, Vol. 7, No. 4, 01.10.2003, p. 349-354.

Research output: Contribution to journalArticle

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