Crystal growth in the low-temperature deposition of polycrystalline silicon thin film

Seung Doh Shin, Dong Wan Kim, Dong Ik Kim, Doh Yeon Kim

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In this study, the microstructure and property of poly-Si film, deposited using hot wire chemical vapor deposition (HWCVD) were investigated. A consequence of the low a-Si content in the poly-Si film was crystallites with well developed facets. The crystallite morphology was rhombic pyramidal while EBSD analysis revealed the existence of (1 1 1) contact twin planes. The facets of the rhombic pyramidal crystallites were based on {320} and {320}* planes, which have Σ3 twin relationship with respect to (1 1 1) contact twin plane.

Original languageEnglish
Pages (from-to)347-354
Number of pages8
JournalJournal of Crystal Growth
Volume274
Issue number3-4
DOIs
Publication statusPublished - 2005 Feb 1

Keywords

  • A1. EBSD
  • A1. Rhombic pyramid
  • A1. Twin
  • A3. HWCVD
  • B1. Poly-Si

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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