Crystal growth in the low-temperature deposition of polycrystalline silicon thin film

Seung Doh Shin, Dong-Wan Kim, Dong Ik Kim, Doh Yeon Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, the microstructure and property of poly-Si film, deposited using hot wire chemical vapor deposition (HWCVD) were investigated. A consequence of the low a-Si content in the poly-Si film was crystallites with well developed facets. The crystallite morphology was rhombic pyramidal while EBSD analysis revealed the existence of (1 1 1) contact twin planes. The facets of the rhombic pyramidal crystallites were based on {320} and {320}* planes, which have Σ3 twin relationship with respect to (1 1 1) contact twin plane.

Original languageEnglish
Pages (from-to)347-354
Number of pages8
JournalJournal of Crystal Growth
Volume274
Issue number3-4
DOIs
Publication statusPublished - 2005 Feb 1
Externally publishedYes

Fingerprint

Crystallization
Crystallites
Crystal growth
Polysilicon
crystallites
crystal growth
flat surfaces
Thin films
silicon
thin films
Chemical vapor deposition
vapor deposition
wire
Wire
Temperature
microstructure
Microstructure

Keywords

  • A1. EBSD
  • A1. Rhombic pyramid
  • A1. Twin
  • A3. HWCVD
  • B1. Poly-Si

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Crystal growth in the low-temperature deposition of polycrystalline silicon thin film. / Shin, Seung Doh; Kim, Dong-Wan; Kim, Dong Ik; Kim, Doh Yeon.

In: Journal of Crystal Growth, Vol. 274, No. 3-4, 01.02.2005, p. 347-354.

Research output: Contribution to journalArticle

Shin, Seung Doh ; Kim, Dong-Wan ; Kim, Dong Ik ; Kim, Doh Yeon. / Crystal growth in the low-temperature deposition of polycrystalline silicon thin film. In: Journal of Crystal Growth. 2005 ; Vol. 274, No. 3-4. pp. 347-354.
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