Crystalline direction dependence of spin precession angle and its application to complementary spin logic devices

Youn Ho Park, Hyung Jun Kim, Joonyeon Chang, Heon Jin Choi, Hyun Cheol Koo

Research output: Contribution to journalArticle


In a semiconductor channel, spin-orbit interaction is divided into two terms, Rashba and Dresselhaus effects, which are key phenomena for modulating spin precession angles. The direction of Rashba field is always perpendicular to the wavevector but that of Dresselhaus field depends on the crystal orientation. Based on the individual Rashba and Dresselhaus strengths, we calculate spin precession angles for various crystal orientations in an InAs quantum well structure. When the channel length is 1 μm, the precession angle is 550° for the [110] direction and 460° for the [1-10] direction, respectively. Using the two spin transistors with different crystal directions, which play roles of n- and p-type transistors in conventional charge transistors, we propose a complementary logic device.

Original languageEnglish
Pages (from-to)7518-7521
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number10
Publication statusPublished - 2015 Oct 1



  • Dresselhaus effect
  • Rashba effect
  • Spin precession angle
  • Spin-FET
  • Spin-orbit interaction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

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