Crystalline Ge quantum dots embedded in SiO2 matrix synthesized by plasma immersion ion implantation

Jun Hong Jeon, Jin Young Choi, Won Woong Park, Sun Woo Moon, Kyoung Won Park, Sang Ho Lim, Seung Hee Han

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


A new plasma process, i.e.a combination of plasma immersion ion implantation and deposition (PIII&D) and high power impulse magnetron sputtering (HiPIMS), was developed to implant non-gaseous ions into material surfaces. The new process has the great advantage that thin film deposition and non-gaseous ion implantation can be achieved in a single plasma chamber. In this study, Ge ions were successfully implanted into SiO2 thin film, which resulted in uniformly and homogeneously distributed crystalline Ge quantum dots (Ge-QDs) embedded in a SiO2 matrix even without a further annealing process. Broader areas of application of PIII&D technology are envisaged with this newly developed process.

Original languageEnglish
Article number285605
Issue number28
Publication statusPublished - 2011 Jul 15

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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