Cu-Containing [Pt/Co] multilayers with low saturation magnetization suitable for the pinned structure

Dong Su Son, Tae Young Lee, Sang Ho Lim, Seong Rae Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We prepared [Pt/(Co, Cu)] multilayers with a very thin (i.e., 0.2 nm thick) Pt layer and a thicker (i.e., 0.4, 0.5, or 0.6 nm thick) (Co, Cu) layer and investigated the effects of the Cu content in the (Co, Cu) layer and the postannealing temperature on the magnetic properties of the multilayers. The samples in the as-deposited state and those annealed up to 500 °C for 1 h all exhibited perpendicular magnetic anisotropy (PMA). The PMA strength and saturation magnetization both decreased with increasing content of Cu in the samples. The saturation magnetization of the Cu containing multilayers annealed at 500 °C substantially decreased, probably owing to the change in the microstructure from a layered structure in the as-deposited samples to a bulk phase in the annealed ones, as supported by high resolution transmission electron microscopy images. The effective PMA energy density of the samples annealed at high temperatures, on the other hand, remained nearly unchanged and even increased slightly indicating a high postannealing stability of Cu containing multilayers. The Cu-containing multilayers may find potential application to high density magnetic random access memory as the pinned structure of magnetic tunnel junctions because the multilayers showed low saturation magnetizations in the range 164-753 emu/cm3 and high postannealing stability.

Original languageEnglish
Article number6971447
JournalIEEE Transactions on Magnetics
Volume50
Issue number11
DOIs
Publication statusPublished - 2014 Nov 1

Fingerprint

Saturation magnetization
Multilayers
Magnetic anisotropy
Tunnel junctions
High resolution transmission electron microscopy
Magnetic properties
Data storage equipment
Temperature
Microstructure

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Cu-Containing [Pt/Co] multilayers with low saturation magnetization suitable for the pinned structure. / Son, Dong Su; Lee, Tae Young; Lim, Sang Ho; Lee, Seong Rae.

In: IEEE Transactions on Magnetics, Vol. 50, No. 11, 6971447, 01.11.2014.

Research output: Contribution to journalArticle

@article{b5ff52731e7442e18100c0d73d324667,
title = "Cu-Containing [Pt/Co] multilayers with low saturation magnetization suitable for the pinned structure",
abstract = "We prepared [Pt/(Co, Cu)] multilayers with a very thin (i.e., 0.2 nm thick) Pt layer and a thicker (i.e., 0.4, 0.5, or 0.6 nm thick) (Co, Cu) layer and investigated the effects of the Cu content in the (Co, Cu) layer and the postannealing temperature on the magnetic properties of the multilayers. The samples in the as-deposited state and those annealed up to 500 °C for 1 h all exhibited perpendicular magnetic anisotropy (PMA). The PMA strength and saturation magnetization both decreased with increasing content of Cu in the samples. The saturation magnetization of the Cu containing multilayers annealed at 500 °C substantially decreased, probably owing to the change in the microstructure from a layered structure in the as-deposited samples to a bulk phase in the annealed ones, as supported by high resolution transmission electron microscopy images. The effective PMA energy density of the samples annealed at high temperatures, on the other hand, remained nearly unchanged and even increased slightly indicating a high postannealing stability of Cu containing multilayers. The Cu-containing multilayers may find potential application to high density magnetic random access memory as the pinned structure of magnetic tunnel junctions because the multilayers showed low saturation magnetizations in the range 164-753 emu/cm3 and high postannealing stability.",
keywords = "Cu)] multilayers, Low saturation magnetization, magnetic random access memory, perpendicular magnetic anisotropy (PMA), [Pt/(Co",
author = "Son, {Dong Su} and Lee, {Tae Young} and Lim, {Sang Ho} and Lee, {Seong Rae}",
year = "2014",
month = "11",
day = "1",
doi = "10.1109/TMAG.2014.2325054",
language = "English",
volume = "50",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",

}

TY - JOUR

T1 - Cu-Containing [Pt/Co] multilayers with low saturation magnetization suitable for the pinned structure

AU - Son, Dong Su

AU - Lee, Tae Young

AU - Lim, Sang Ho

AU - Lee, Seong Rae

PY - 2014/11/1

Y1 - 2014/11/1

N2 - We prepared [Pt/(Co, Cu)] multilayers with a very thin (i.e., 0.2 nm thick) Pt layer and a thicker (i.e., 0.4, 0.5, or 0.6 nm thick) (Co, Cu) layer and investigated the effects of the Cu content in the (Co, Cu) layer and the postannealing temperature on the magnetic properties of the multilayers. The samples in the as-deposited state and those annealed up to 500 °C for 1 h all exhibited perpendicular magnetic anisotropy (PMA). The PMA strength and saturation magnetization both decreased with increasing content of Cu in the samples. The saturation magnetization of the Cu containing multilayers annealed at 500 °C substantially decreased, probably owing to the change in the microstructure from a layered structure in the as-deposited samples to a bulk phase in the annealed ones, as supported by high resolution transmission electron microscopy images. The effective PMA energy density of the samples annealed at high temperatures, on the other hand, remained nearly unchanged and even increased slightly indicating a high postannealing stability of Cu containing multilayers. The Cu-containing multilayers may find potential application to high density magnetic random access memory as the pinned structure of magnetic tunnel junctions because the multilayers showed low saturation magnetizations in the range 164-753 emu/cm3 and high postannealing stability.

AB - We prepared [Pt/(Co, Cu)] multilayers with a very thin (i.e., 0.2 nm thick) Pt layer and a thicker (i.e., 0.4, 0.5, or 0.6 nm thick) (Co, Cu) layer and investigated the effects of the Cu content in the (Co, Cu) layer and the postannealing temperature on the magnetic properties of the multilayers. The samples in the as-deposited state and those annealed up to 500 °C for 1 h all exhibited perpendicular magnetic anisotropy (PMA). The PMA strength and saturation magnetization both decreased with increasing content of Cu in the samples. The saturation magnetization of the Cu containing multilayers annealed at 500 °C substantially decreased, probably owing to the change in the microstructure from a layered structure in the as-deposited samples to a bulk phase in the annealed ones, as supported by high resolution transmission electron microscopy images. The effective PMA energy density of the samples annealed at high temperatures, on the other hand, remained nearly unchanged and even increased slightly indicating a high postannealing stability of Cu containing multilayers. The Cu-containing multilayers may find potential application to high density magnetic random access memory as the pinned structure of magnetic tunnel junctions because the multilayers showed low saturation magnetizations in the range 164-753 emu/cm3 and high postannealing stability.

KW - Cu)] multilayers

KW - Low saturation magnetization

KW - magnetic random access memory

KW - perpendicular magnetic anisotropy (PMA)

KW - [Pt/(Co

UR - http://www.scopus.com/inward/record.url?scp=84915749790&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84915749790&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2014.2325054

DO - 10.1109/TMAG.2014.2325054

M3 - Article

AN - SCOPUS:84915749790

VL - 50

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 11

M1 - 6971447

ER -