Cu-doped indium oxide/Ag ohmic contacts for high-power flip-chip light-emitting diodes

June O. Song, Joon Seop Kwak, Tae Yeon Seong

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

We have investigated Cu-doped In2O3(CIO)(3 nm)/ Ag(250 nm) schemes for forming high-quality ohmic contacts top-type GaN for high-power flip-chip light-emitting diodes (FCLEDs). It is shown that the CIO/ Ag contacts produce specific contact resistance of 1.28 × 10-5 ω cm2 and reflectance of about 90% at a wavelength of 460 nm when annealed at 530 °C for 1 min in air ambient. It is also shown that unlike single Ag contacts, the CIO/Ag contacts are fairly stable without surface and interface degradation although annealed at 530 °C for 1 min in air ambient. In addition, blue multiquantum-well InGaN/GaN LEDs fabricated with the annealed CIO/Ag contact layers give forward-bias voltages of around 3.0 V at an injection current of 20 mA. The results strongly indicate that the CIO/Ag scheme can be a highly promising p-type contact for high-power GaN-based FCLEDs for solid-state lighting application.

Original languageEnglish
Article number062103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number6
DOIs
Publication statusPublished - 2005 Feb 7
Externally publishedYes

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indium oxides
electric contacts
light emitting diodes
chips
air
contact resistance
illuminating
injection
degradation
solid state
reflectance
electric potential
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Cu-doped indium oxide/Ag ohmic contacts for high-power flip-chip light-emitting diodes. / Song, June O.; Kwak, Joon Seop; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 86, No. 6, 062103, 07.02.2005, p. 1-3.

Research output: Contribution to journalArticle

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