Abstract
We have investigated Cu-doped In2O3(CIO)(3 nm)/ Ag(250 nm) schemes for forming high-quality ohmic contacts top-type GaN for high-power flip-chip light-emitting diodes (FCLEDs). It is shown that the CIO/ Ag contacts produce specific contact resistance of 1.28 × 10-5 ω cm2 and reflectance of about 90% at a wavelength of 460 nm when annealed at 530 °C for 1 min in air ambient. It is also shown that unlike single Ag contacts, the CIO/Ag contacts are fairly stable without surface and interface degradation although annealed at 530 °C for 1 min in air ambient. In addition, blue multiquantum-well InGaN/GaN LEDs fabricated with the annealed CIO/Ag contact layers give forward-bias voltages of around 3.0 V at an injection current of 20 mA. The results strongly indicate that the CIO/Ag scheme can be a highly promising p-type contact for high-power GaN-based FCLEDs for solid-state lighting application.
| Original language | English |
|---|---|
| Article number | 062103 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 86 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2005 Feb 7 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Cu-doped indium oxide/Ag ohmic contacts for high-power flip-chip light-emitting diodes. / Song, June O.; Kwak, Joon Seop; Seong, Tae Yeon.
In: Applied Physics Letters, Vol. 86, No. 6, 062103, 07.02.2005, p. 1-3.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Cu-doped indium oxide/Ag ohmic contacts for high-power flip-chip light-emitting diodes
AU - Song, June O.
AU - Kwak, Joon Seop
AU - Seong, Tae Yeon
PY - 2005/2/7
Y1 - 2005/2/7
N2 - We have investigated Cu-doped In2O3(CIO)(3 nm)/ Ag(250 nm) schemes for forming high-quality ohmic contacts top-type GaN for high-power flip-chip light-emitting diodes (FCLEDs). It is shown that the CIO/ Ag contacts produce specific contact resistance of 1.28 × 10-5 ω cm2 and reflectance of about 90% at a wavelength of 460 nm when annealed at 530 °C for 1 min in air ambient. It is also shown that unlike single Ag contacts, the CIO/Ag contacts are fairly stable without surface and interface degradation although annealed at 530 °C for 1 min in air ambient. In addition, blue multiquantum-well InGaN/GaN LEDs fabricated with the annealed CIO/Ag contact layers give forward-bias voltages of around 3.0 V at an injection current of 20 mA. The results strongly indicate that the CIO/Ag scheme can be a highly promising p-type contact for high-power GaN-based FCLEDs for solid-state lighting application.
AB - We have investigated Cu-doped In2O3(CIO)(3 nm)/ Ag(250 nm) schemes for forming high-quality ohmic contacts top-type GaN for high-power flip-chip light-emitting diodes (FCLEDs). It is shown that the CIO/ Ag contacts produce specific contact resistance of 1.28 × 10-5 ω cm2 and reflectance of about 90% at a wavelength of 460 nm when annealed at 530 °C for 1 min in air ambient. It is also shown that unlike single Ag contacts, the CIO/Ag contacts are fairly stable without surface and interface degradation although annealed at 530 °C for 1 min in air ambient. In addition, blue multiquantum-well InGaN/GaN LEDs fabricated with the annealed CIO/Ag contact layers give forward-bias voltages of around 3.0 V at an injection current of 20 mA. The results strongly indicate that the CIO/Ag scheme can be a highly promising p-type contact for high-power GaN-based FCLEDs for solid-state lighting application.
UR - http://www.scopus.com/inward/record.url?scp=21044439850&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=21044439850&partnerID=8YFLogxK
U2 - 10.1063/1.1861494
DO - 10.1063/1.1861494
M3 - Article
AN - SCOPUS:21044439850
VL - 86
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
M1 - 062103
ER -