Cu-doped ZnO-based p-n hetero-junction light emitting diode

J. B. Kim; D. Byun; S. Y. Ie; D. H. Park; W. K. Choi; Ji Won Choi; Basavaraj Angadi

doi:10.1088/0268-1242/23/9/095004

Cu-doped ZnO-based p-n hetero-junction light emitting diode

J. B. Kim, D. Byun, S. Y. Ie, D. H. Park, W. K. Choi, Ji Won Choi, Basavaraj Angadi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

75 Citations (Scopus)

Abstract

Copper-doped p-ZnO thin films (Cu:ZnO) were grown on α-Al ₂O₃(0 0 0 1) and 6H:SiC(0 0 0 1) single crystal substrates by plasma-assisted molecular beam epitaxy. A p-n hetero-junction with p-Cu:ZnO/n-6H:SiC was successfully fabricated and demonstrated as a greenish-blue light emitting diode (LED). The rectifying I-V curve along with the matching photoluminescence and electroluminescence emissions characterizes the fabricated p-n hetero-junction LED. The Cu cell temperature (T_Cu) and the post-deposition annealing environment greatly influence the Cu oxidation state, and hence the electrical conversion from n-type to p-type and carrier concentration in the films. The higher T_Cu and post-annealing in O-plasma were observed to be the favorable conditions for Cu²⁺ and hence the p-type nature of the films.

Original language	English
Article number	095004
Journal	Semiconductor Science and Technology
Volume	23
Issue number	9
DOIs	https://doi.org/10.1088/0268-1242/23/9/095004
Publication status	Published - 2008 Sep 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Cu-doped ZnO-based p-n hetero-junction light emitting diode",

abstract = "Copper-doped p-ZnO thin films (Cu:ZnO) were grown on α-Al 2O3(0 0 0 1) and 6H:SiC(0 0 0 1) single crystal substrates by plasma-assisted molecular beam epitaxy. A p-n hetero-junction with p-Cu:ZnO/n-6H:SiC was successfully fabricated and demonstrated as a greenish-blue light emitting diode (LED). The rectifying I-V curve along with the matching photoluminescence and electroluminescence emissions characterizes the fabricated p-n hetero-junction LED. The Cu cell temperature (TCu) and the post-deposition annealing environment greatly influence the Cu oxidation state, and hence the electrical conversion from n-type to p-type and carrier concentration in the films. The higher TCu and post-annealing in O-plasma were observed to be the favorable conditions for Cu2+ and hence the p-type nature of the films.",

author = "Kim, {J. B.} and D. Byun and Ie, {S. Y.} and Park, {D. H.} and Choi, {W. K.} and Choi, {Ji Won} and Basavaraj Angadi",

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T1 - Cu-doped ZnO-based p-n hetero-junction light emitting diode

AU - Kim, J. B.

AU - Byun, D.

AU - Ie, S. Y.

AU - Park, D. H.

AU - Choi, W. K.

AU - Choi, Ji Won

AU - Angadi, Basavaraj

PY - 2008/9/1

Y1 - 2008/9/1

N2 - Copper-doped p-ZnO thin films (Cu:ZnO) were grown on α-Al 2O3(0 0 0 1) and 6H:SiC(0 0 0 1) single crystal substrates by plasma-assisted molecular beam epitaxy. A p-n hetero-junction with p-Cu:ZnO/n-6H:SiC was successfully fabricated and demonstrated as a greenish-blue light emitting diode (LED). The rectifying I-V curve along with the matching photoluminescence and electroluminescence emissions characterizes the fabricated p-n hetero-junction LED. The Cu cell temperature (TCu) and the post-deposition annealing environment greatly influence the Cu oxidation state, and hence the electrical conversion from n-type to p-type and carrier concentration in the films. The higher TCu and post-annealing in O-plasma were observed to be the favorable conditions for Cu2+ and hence the p-type nature of the films.

AB - Copper-doped p-ZnO thin films (Cu:ZnO) were grown on α-Al 2O3(0 0 0 1) and 6H:SiC(0 0 0 1) single crystal substrates by plasma-assisted molecular beam epitaxy. A p-n hetero-junction with p-Cu:ZnO/n-6H:SiC was successfully fabricated and demonstrated as a greenish-blue light emitting diode (LED). The rectifying I-V curve along with the matching photoluminescence and electroluminescence emissions characterizes the fabricated p-n hetero-junction LED. The Cu cell temperature (TCu) and the post-deposition annealing environment greatly influence the Cu oxidation state, and hence the electrical conversion from n-type to p-type and carrier concentration in the films. The higher TCu and post-annealing in O-plasma were observed to be the favorable conditions for Cu2+ and hence the p-type nature of the films.

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