Abstract
Copper-doped p-ZnO thin films (Cu:ZnO) were grown on α-Al 2O3(0 0 0 1) and 6H:SiC(0 0 0 1) single crystal substrates by plasma-assisted molecular beam epitaxy. A p-n hetero-junction with p-Cu:ZnO/n-6H:SiC was successfully fabricated and demonstrated as a greenish-blue light emitting diode (LED). The rectifying I-V curve along with the matching photoluminescence and electroluminescence emissions characterizes the fabricated p-n hetero-junction LED. The Cu cell temperature (TCu) and the post-deposition annealing environment greatly influence the Cu oxidation state, and hence the electrical conversion from n-type to p-type and carrier concentration in the films. The higher TCu and post-annealing in O-plasma were observed to be the favorable conditions for Cu2+ and hence the p-type nature of the films.
| Original language | English |
|---|---|
| Article number | 095004 |
| Journal | Semiconductor Science and Technology |
| Volume | 23 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2008 Sep 1 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
Cite this
Cu-doped ZnO-based p-n hetero-junction light emitting diode. / Kim, J. B.; Byun, Dong Jin; Ie, S. Y.; Park, D. H.; Choi, W. K.; Choi, Ji Won; Angadi, Basavaraj.
In: Semiconductor Science and Technology, Vol. 23, No. 9, 095004, 01.09.2008.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Cu-doped ZnO-based p-n hetero-junction light emitting diode
AU - Kim, J. B.
AU - Byun, Dong Jin
AU - Ie, S. Y.
AU - Park, D. H.
AU - Choi, W. K.
AU - Choi, Ji Won
AU - Angadi, Basavaraj
PY - 2008/9/1
Y1 - 2008/9/1
N2 - Copper-doped p-ZnO thin films (Cu:ZnO) were grown on α-Al 2O3(0 0 0 1) and 6H:SiC(0 0 0 1) single crystal substrates by plasma-assisted molecular beam epitaxy. A p-n hetero-junction with p-Cu:ZnO/n-6H:SiC was successfully fabricated and demonstrated as a greenish-blue light emitting diode (LED). The rectifying I-V curve along with the matching photoluminescence and electroluminescence emissions characterizes the fabricated p-n hetero-junction LED. The Cu cell temperature (TCu) and the post-deposition annealing environment greatly influence the Cu oxidation state, and hence the electrical conversion from n-type to p-type and carrier concentration in the films. The higher TCu and post-annealing in O-plasma were observed to be the favorable conditions for Cu2+ and hence the p-type nature of the films.
AB - Copper-doped p-ZnO thin films (Cu:ZnO) were grown on α-Al 2O3(0 0 0 1) and 6H:SiC(0 0 0 1) single crystal substrates by plasma-assisted molecular beam epitaxy. A p-n hetero-junction with p-Cu:ZnO/n-6H:SiC was successfully fabricated and demonstrated as a greenish-blue light emitting diode (LED). The rectifying I-V curve along with the matching photoluminescence and electroluminescence emissions characterizes the fabricated p-n hetero-junction LED. The Cu cell temperature (TCu) and the post-deposition annealing environment greatly influence the Cu oxidation state, and hence the electrical conversion from n-type to p-type and carrier concentration in the films. The higher TCu and post-annealing in O-plasma were observed to be the favorable conditions for Cu2+ and hence the p-type nature of the films.
UR - http://www.scopus.com/inward/record.url?scp=51849147852&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=51849147852&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/23/9/095004
DO - 10.1088/0268-1242/23/9/095004
M3 - Article
AN - SCOPUS:51849147852
VL - 23
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 9
M1 - 095004
ER -