Cu-doped ZnO-based p-n hetero-junction light emitting diode

J. B. Kim, D. Byun, S. Y. Ie, D. H. Park, W. K. Choi, Ji Won Choi, Basavaraj Angadi

Research output: Contribution to journalArticlepeer-review

81 Citations (Scopus)


Copper-doped p-ZnO thin films (Cu:ZnO) were grown on α-Al 2O3(0 0 0 1) and 6H:SiC(0 0 0 1) single crystal substrates by plasma-assisted molecular beam epitaxy. A p-n hetero-junction with p-Cu:ZnO/n-6H:SiC was successfully fabricated and demonstrated as a greenish-blue light emitting diode (LED). The rectifying I-V curve along with the matching photoluminescence and electroluminescence emissions characterizes the fabricated p-n hetero-junction LED. The Cu cell temperature (TCu) and the post-deposition annealing environment greatly influence the Cu oxidation state, and hence the electrical conversion from n-type to p-type and carrier concentration in the films. The higher TCu and post-annealing in O-plasma were observed to be the favorable conditions for Cu2+ and hence the p-type nature of the films.

Original languageEnglish
Article number095004
JournalSemiconductor Science and Technology
Issue number9
Publication statusPublished - 2008 Sep 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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