Cu-doped ZnO-based p-n hetero-junction light emitting diode

J. B. Kim, D. Byun, S. Y. Ie, D. H. Park, W. K. Choi, Ji Won Choi, Basavaraj Angadi

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Abstract

Copper-doped p-ZnO thin films (Cu:ZnO) were grown on α-Al 2O3(0 0 0 1) and 6H:SiC(0 0 0 1) single crystal substrates by plasma-assisted molecular beam epitaxy. A p-n hetero-junction with p-Cu:ZnO/n-6H:SiC was successfully fabricated and demonstrated as a greenish-blue light emitting diode (LED). The rectifying I-V curve along with the matching photoluminescence and electroluminescence emissions characterizes the fabricated p-n hetero-junction LED. The Cu cell temperature (TCu) and the post-deposition annealing environment greatly influence the Cu oxidation state, and hence the electrical conversion from n-type to p-type and carrier concentration in the films. The higher TCu and post-annealing in O-plasma were observed to be the favorable conditions for Cu2+ and hence the p-type nature of the films.

Original languageEnglish
Article number095004
JournalSemiconductor Science and Technology
Volume23
Issue number9
DOIs
Publication statusPublished - 2008 Sep 1

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kim, J. B., Byun, D., Ie, S. Y., Park, D. H., Choi, W. K., Choi, J. W., & Angadi, B. (2008). Cu-doped ZnO-based p-n hetero-junction light emitting diode. Semiconductor Science and Technology, 23(9), [095004]. https://doi.org/10.1088/0268-1242/23/9/095004