Cu-doped ZnO-based p-n hetero-junction light emitting diode

J. B. Kim, Dong Jin Byun, S. Y. Ie, D. H. Park, W. K. Choi, Ji Won Choi, Basavaraj Angadi

Research output: Contribution to journalArticle

63 Citations (Scopus)

Abstract

Copper-doped p-ZnO thin films (Cu:ZnO) were grown on α-Al 2O3(0 0 0 1) and 6H:SiC(0 0 0 1) single crystal substrates by plasma-assisted molecular beam epitaxy. A p-n hetero-junction with p-Cu:ZnO/n-6H:SiC was successfully fabricated and demonstrated as a greenish-blue light emitting diode (LED). The rectifying I-V curve along with the matching photoluminescence and electroluminescence emissions characterizes the fabricated p-n hetero-junction LED. The Cu cell temperature (TCu) and the post-deposition annealing environment greatly influence the Cu oxidation state, and hence the electrical conversion from n-type to p-type and carrier concentration in the films. The higher TCu and post-annealing in O-plasma were observed to be the favorable conditions for Cu2+ and hence the p-type nature of the films.

Original languageEnglish
Article number095004
JournalSemiconductor Science and Technology
Volume23
Issue number9
DOIs
Publication statusPublished - 2008 Sep 1

Fingerprint

junction diodes
p-n junctions
Light emitting diodes
light emitting diodes
Annealing
Plasmas
annealing
Electroluminescence
Molecular beam epitaxy
electroluminescence
Carrier concentration
Copper
Photoluminescence
molecular beam epitaxy
Single crystals
photoluminescence
Thin films
copper
Oxidation
oxidation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Kim, J. B., Byun, D. J., Ie, S. Y., Park, D. H., Choi, W. K., Choi, J. W., & Angadi, B. (2008). Cu-doped ZnO-based p-n hetero-junction light emitting diode. Semiconductor Science and Technology, 23(9), [095004]. https://doi.org/10.1088/0268-1242/23/9/095004

Cu-doped ZnO-based p-n hetero-junction light emitting diode. / Kim, J. B.; Byun, Dong Jin; Ie, S. Y.; Park, D. H.; Choi, W. K.; Choi, Ji Won; Angadi, Basavaraj.

In: Semiconductor Science and Technology, Vol. 23, No. 9, 095004, 01.09.2008.

Research output: Contribution to journalArticle

Kim, J. B. ; Byun, Dong Jin ; Ie, S. Y. ; Park, D. H. ; Choi, W. K. ; Choi, Ji Won ; Angadi, Basavaraj. / Cu-doped ZnO-based p-n hetero-junction light emitting diode. In: Semiconductor Science and Technology. 2008 ; Vol. 23, No. 9.
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AU - Kim, J. B.

AU - Byun, Dong Jin

AU - Ie, S. Y.

AU - Park, D. H.

AU - Choi, W. K.

AU - Choi, Ji Won

AU - Angadi, Basavaraj

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N2 - Copper-doped p-ZnO thin films (Cu:ZnO) were grown on α-Al 2O3(0 0 0 1) and 6H:SiC(0 0 0 1) single crystal substrates by plasma-assisted molecular beam epitaxy. A p-n hetero-junction with p-Cu:ZnO/n-6H:SiC was successfully fabricated and demonstrated as a greenish-blue light emitting diode (LED). The rectifying I-V curve along with the matching photoluminescence and electroluminescence emissions characterizes the fabricated p-n hetero-junction LED. The Cu cell temperature (TCu) and the post-deposition annealing environment greatly influence the Cu oxidation state, and hence the electrical conversion from n-type to p-type and carrier concentration in the films. The higher TCu and post-annealing in O-plasma were observed to be the favorable conditions for Cu2+ and hence the p-type nature of the films.

AB - Copper-doped p-ZnO thin films (Cu:ZnO) were grown on α-Al 2O3(0 0 0 1) and 6H:SiC(0 0 0 1) single crystal substrates by plasma-assisted molecular beam epitaxy. A p-n hetero-junction with p-Cu:ZnO/n-6H:SiC was successfully fabricated and demonstrated as a greenish-blue light emitting diode (LED). The rectifying I-V curve along with the matching photoluminescence and electroluminescence emissions characterizes the fabricated p-n hetero-junction LED. The Cu cell temperature (TCu) and the post-deposition annealing environment greatly influence the Cu oxidation state, and hence the electrical conversion from n-type to p-type and carrier concentration in the films. The higher TCu and post-annealing in O-plasma were observed to be the favorable conditions for Cu2+ and hence the p-type nature of the films.

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