TY - JOUR
T1 - Current aspects and future perspectives of high-density MRAM
AU - Kim, Taewan
AU - Park, Sang Jin
AU - Noh, Jinseo
AU - Park, Wanjun
AU - Song, I. Hun
AU - Kim, Young Keun
PY - 2004/6
Y1 - 2004/6
N2 - Magnetoresistive random access memory (MRAM) is regarded as one of the leading candidates for universal memory [1] that will be commercialized in the foreseeable future. The figure of merits for MRAM technology includes non-volatility, high speed, high density, radiation hardness, and unlimited endurance. Very promising R & D results have been announced wordlwide. For a high density MRAM as a stand-alone memory, uniform resistance and switching control for sub-micron and deep sub-micron devices must be guaranteed. To achieve this goal, several material and device issues related with MRAM core cell should be resolved. Resistance (R) as well as magnetoresistance (MR) are limited by the uniformity of barrier thickness induced by bottom electrode. Switching issues appear controllable with a choice of appropriate shape and fine patterning process.
AB - Magnetoresistive random access memory (MRAM) is regarded as one of the leading candidates for universal memory [1] that will be commercialized in the foreseeable future. The figure of merits for MRAM technology includes non-volatility, high speed, high density, radiation hardness, and unlimited endurance. Very promising R & D results have been announced wordlwide. For a high density MRAM as a stand-alone memory, uniform resistance and switching control for sub-micron and deep sub-micron devices must be guaranteed. To achieve this goal, several material and device issues related with MRAM core cell should be resolved. Resistance (R) as well as magnetoresistance (MR) are limited by the uniformity of barrier thickness induced by bottom electrode. Switching issues appear controllable with a choice of appropriate shape and fine patterning process.
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U2 - 10.1002/pssa.200304539
DO - 10.1002/pssa.200304539
M3 - Article
AN - SCOPUS:3142718331
VL - 201
SP - 1617
EP - 1620
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 8
ER -