Current fluctuation of electron and hole carriers in multilayer WSe2 field effect transistors

Seung Pil Ko, Jong Mok Shin, Yong Jin Kim, Ho Kyun Jang, Jun Eon Jin, Minju Shin, Young-geun Kim, Gyu-Tae Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe2 field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe2 FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (SI) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NSI) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.

Original languageEnglish
Article number242102
JournalApplied Physics Letters
Volume107
Issue number24
DOIs
Publication statusPublished - 2015 Dec 14

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field effect transistors
electrons
charge carriers
International System of Units
threshold voltage
logic
trapping
electrical properties
low frequencies
curves
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Current fluctuation of electron and hole carriers in multilayer WSe2 field effect transistors. / Ko, Seung Pil; Shin, Jong Mok; Kim, Yong Jin; Jang, Ho Kyun; Jin, Jun Eon; Shin, Minju; Kim, Young-geun; Kim, Gyu-Tae.

In: Applied Physics Letters, Vol. 107, No. 24, 242102, 14.12.2015.

Research output: Contribution to journalArticle

Ko, Seung Pil ; Shin, Jong Mok ; Kim, Yong Jin ; Jang, Ho Kyun ; Jin, Jun Eon ; Shin, Minju ; Kim, Young-geun ; Kim, Gyu-Tae. / Current fluctuation of electron and hole carriers in multilayer WSe2 field effect transistors. In: Applied Physics Letters. 2015 ; Vol. 107, No. 24.
@article{ba0e2db0ef1049de9aa7e99f600cbdc0,
title = "Current fluctuation of electron and hole carriers in multilayer WSe2 field effect transistors",
abstract = "Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe2 field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe2 FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (SI) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NSI) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.",
author = "Ko, {Seung Pil} and Shin, {Jong Mok} and Kim, {Yong Jin} and Jang, {Ho Kyun} and Jin, {Jun Eon} and Minju Shin and Young-geun Kim and Gyu-Tae Kim",
year = "2015",
month = "12",
day = "14",
doi = "10.1063/1.4937618",
language = "English",
volume = "107",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "24",

}

TY - JOUR

T1 - Current fluctuation of electron and hole carriers in multilayer WSe2 field effect transistors

AU - Ko, Seung Pil

AU - Shin, Jong Mok

AU - Kim, Yong Jin

AU - Jang, Ho Kyun

AU - Jin, Jun Eon

AU - Shin, Minju

AU - Kim, Young-geun

AU - Kim, Gyu-Tae

PY - 2015/12/14

Y1 - 2015/12/14

N2 - Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe2 field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe2 FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (SI) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NSI) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.

AB - Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe2 field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe2 FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (SI) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NSI) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.

UR - http://www.scopus.com/inward/record.url?scp=84950319535&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84950319535&partnerID=8YFLogxK

U2 - 10.1063/1.4937618

DO - 10.1063/1.4937618

M3 - Article

AN - SCOPUS:84950319535

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 242102

ER -