Current-induced flip-flop of magnetization in magnetic tunnel junction with perpendicular magnetic layers and polarization-enhancement layers

Woojin Kim, Taek Dong Lee, Kyoung Jin Lee

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We performed a micromagnetic investigation of current-induced magnetization switching in perpendicular magnetic tunnel junctions with polarization- enhancement layers. The pinned layer with a polarization-enhancement layer can be excited and eventually reverses at a current density lower than the value theoretically expected from that without a polarization-enhancement layer. The reversal results in continuous flip-flops of magnetizations as long as the current is applied. The flip-flop occurs at only one current polarity, caused by the precession amplification in polarization-enhancement layer. In order to prevent the unwanted flip-flop, the perpendicular anisotropy of the pinned layer must be severalfold larger than that of the free layer.

Original languageEnglish
Article number232506
JournalApplied Physics Letters
Volume93
Issue number23
DOIs
Publication statusPublished - 2008 Dec 19

Fingerprint

flip-flops
tunnel junctions
magnetization
augmentation
polarization
precession
polarity
current density
anisotropy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Current-induced flip-flop of magnetization in magnetic tunnel junction with perpendicular magnetic layers and polarization-enhancement layers. / Kim, Woojin; Lee, Taek Dong; Lee, Kyoung Jin.

In: Applied Physics Letters, Vol. 93, No. 23, 232506, 19.12.2008.

Research output: Contribution to journalArticle

@article{4f02455ac2684bc3ae4e7c8a5c681cd5,
title = "Current-induced flip-flop of magnetization in magnetic tunnel junction with perpendicular magnetic layers and polarization-enhancement layers",
abstract = "We performed a micromagnetic investigation of current-induced magnetization switching in perpendicular magnetic tunnel junctions with polarization- enhancement layers. The pinned layer with a polarization-enhancement layer can be excited and eventually reverses at a current density lower than the value theoretically expected from that without a polarization-enhancement layer. The reversal results in continuous flip-flops of magnetizations as long as the current is applied. The flip-flop occurs at only one current polarity, caused by the precession amplification in polarization-enhancement layer. In order to prevent the unwanted flip-flop, the perpendicular anisotropy of the pinned layer must be severalfold larger than that of the free layer.",
author = "Woojin Kim and Lee, {Taek Dong} and Lee, {Kyoung Jin}",
year = "2008",
month = "12",
day = "19",
doi = "10.1063/1.3046729",
language = "English",
volume = "93",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

TY - JOUR

T1 - Current-induced flip-flop of magnetization in magnetic tunnel junction with perpendicular magnetic layers and polarization-enhancement layers

AU - Kim, Woojin

AU - Lee, Taek Dong

AU - Lee, Kyoung Jin

PY - 2008/12/19

Y1 - 2008/12/19

N2 - We performed a micromagnetic investigation of current-induced magnetization switching in perpendicular magnetic tunnel junctions with polarization- enhancement layers. The pinned layer with a polarization-enhancement layer can be excited and eventually reverses at a current density lower than the value theoretically expected from that without a polarization-enhancement layer. The reversal results in continuous flip-flops of magnetizations as long as the current is applied. The flip-flop occurs at only one current polarity, caused by the precession amplification in polarization-enhancement layer. In order to prevent the unwanted flip-flop, the perpendicular anisotropy of the pinned layer must be severalfold larger than that of the free layer.

AB - We performed a micromagnetic investigation of current-induced magnetization switching in perpendicular magnetic tunnel junctions with polarization- enhancement layers. The pinned layer with a polarization-enhancement layer can be excited and eventually reverses at a current density lower than the value theoretically expected from that without a polarization-enhancement layer. The reversal results in continuous flip-flops of magnetizations as long as the current is applied. The flip-flop occurs at only one current polarity, caused by the precession amplification in polarization-enhancement layer. In order to prevent the unwanted flip-flop, the perpendicular anisotropy of the pinned layer must be severalfold larger than that of the free layer.

UR - http://www.scopus.com/inward/record.url?scp=57649126091&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57649126091&partnerID=8YFLogxK

U2 - 10.1063/1.3046729

DO - 10.1063/1.3046729

M3 - Article

AN - SCOPUS:57649126091

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 232506

ER -