TY - GEN
T1 - Current induced magnetization switching in spin valves
AU - Nguyen, H. Y.T.
AU - Yi, H.
AU - Joo, S. J.
AU - Lee, K. J.
AU - Shin, K. H.
PY - 2006
Y1 - 2006
N2 - We have studied the current induced magnetization switching (CIMS) in cobalt-based spin valve structures. Two exchange bias spin valves with extended fixed ferromagnets adopted as a current lead have been chosen for the study. The difference between them is that in the first structure, labeled EBSV (Exchange-Biased Spin Valve), no nano-oxide layer (NOL) was applied, while in the second structure, named NOL-EBSV, a NOL is inserted into the exchange biased pinned ferromagnet lead. The CIMSs in these two structures and in a non-exchange biased one, called SSV serving as the reference sample, have been studied. The temperature and field dependence of switching current in EBSV and SSV are also investigated for a better understanding the effect of exchange pinning field on the CIMS. The experiment result of CIMS in the EBSV shows a significant reduction in switching current density by a factor of 4.8, compared with a non-exchange biased spin valve with similar layer thicknesses. A double large reduction of switching current density is observed in the NOL-EBSV. We qualitatively analyze the effect of the exchange bias pinning field as well as of the nano-oxide layer on the reduction of switching current. A quantitative interpretation of the enhancement of CIMS by nano-oxide layer has been done by a three dimensional calculation of spin transport in EBSV and NOL-EBSV.
AB - We have studied the current induced magnetization switching (CIMS) in cobalt-based spin valve structures. Two exchange bias spin valves with extended fixed ferromagnets adopted as a current lead have been chosen for the study. The difference between them is that in the first structure, labeled EBSV (Exchange-Biased Spin Valve), no nano-oxide layer (NOL) was applied, while in the second structure, named NOL-EBSV, a NOL is inserted into the exchange biased pinned ferromagnet lead. The CIMSs in these two structures and in a non-exchange biased one, called SSV serving as the reference sample, have been studied. The temperature and field dependence of switching current in EBSV and SSV are also investigated for a better understanding the effect of exchange pinning field on the CIMS. The experiment result of CIMS in the EBSV shows a significant reduction in switching current density by a factor of 4.8, compared with a non-exchange biased spin valve with similar layer thicknesses. A double large reduction of switching current density is observed in the NOL-EBSV. We qualitatively analyze the effect of the exchange bias pinning field as well as of the nano-oxide layer on the reduction of switching current. A quantitative interpretation of the enhancement of CIMS by nano-oxide layer has been done by a three dimensional calculation of spin transport in EBSV and NOL-EBSV.
KW - CIMS
KW - Exchange-biased
KW - Nano-oxide layer
KW - Spin transfer torque
KW - Spin valves
UR - http://www.scopus.com/inward/record.url?scp=50249126591&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50249126591&partnerID=8YFLogxK
U2 - 10.1109/NMDC.2006.4388736
DO - 10.1109/NMDC.2006.4388736
M3 - Conference contribution
AN - SCOPUS:50249126591
SN - 1424405408
SN - 9781424405404
T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
SP - 184
EP - 185
BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Y2 - 22 October 2006 through 25 October 2006
ER -