Current-induced magnetization switching of synthetic antiferromagnetic free layer in magnetic tunnel junctions

Seo Won Lee, Kyoung Jin Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Spin transport in a magnetic tunnel junction with a synthetic antiferromagnetic (SAF) free layer is investigated using the drift-diffusion model. Although the diffusive transport is inappropriate for the MgO tunnel barrier, the drift-diffusion model is found to capture the core features of in-plane spin-transfer torque (STT) through the tunnel barrier, and more importantly, it can describe non-negligible STT exerting on two ferromagnets in a SAF-free layer. STT in a SAF-free layer substantially changes the magnetization dynamics and induces a shift of the critical switching current. STT in a SAF-free layer suppresses current-induced parallel-to-antiparallel switching, whereas it encourages antiparallel-to-parallel switching.

Original languageEnglish
Article number07C904
JournalJournal of Applied Physics
Volume109
Issue number7
DOIs
Publication statusPublished - 2011 Apr 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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