Current relaxation analysis in AlGaN/GaN high electron mobility transistors

Alexander Y. Polyakov, N. B. Smirnov, Ivan V. Shchemerov, In Hwan Lee, Taehoon Jang, Alexey A. Dorofeev, Nadezhda B. Gladysheva, Eugene S. Kondratyev, Yulia A. Turusova, Roman A. Zinovyev, A. V. Turutin, Fan Ren, S. J. Pearton

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