CuxS back contact for CdTe solar cells

Kim Donghwan; B. E. McCandless; S. S. Hegedus; R. W. Birkmire

Cu_xS back contact for CdTe solar cells

Kim Donghwan, B. E. McCandless, S. S. Hegedus, R. W. Birkmire

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Copper sulfide (Cu_xS) films were studied as a back contact material for CdTe solar cells. The Cu_xS films were made by chemical bath deposition in aqueous solution. Annealing at 200° C in Ar improved the performance of the solar cells. Using the CdS/CdTe/Cu_xS/C structure, an open-circuit voltage (V_oc) higher than 840 mV and an energy conversion efficiency higher than 11% were obtained.

Original language	English
Pages (from-to)	5-8
Number of pages	4
Journal	Revista Mexicana de Fisica
Volume	53
Issue number	1
Publication status	Published - 2007 Jan

Keywords

Cadmium telluride
Contact resistance
Copper sulfide
Solar cells

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

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title = "CuxS back contact for CdTe solar cells",

abstract = "Copper sulfide (CuxS) films were studied as a back contact material for CdTe solar cells. The CuxS films were made by chemical bath deposition in aqueous solution. Annealing at 200° C in Ar improved the performance of the solar cells. Using the CdS/CdTe/CuxS/C structure, an open-circuit voltage (Voc) higher than 840 mV and an energy conversion efficiency higher than 11% were obtained.",

keywords = "Cadmium telluride, Contact resistance, Copper sulfide, Solar cells",

author = "Kim Donghwan and McCandless, {B. E.} and Hegedus, {S. S.} and Birkmire, {R. W.}",

year = "2007",

month = jan,

language = "English",

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T1 - CuxS back contact for CdTe solar cells

AU - Donghwan, Kim

AU - McCandless, B. E.

AU - Hegedus, S. S.

AU - Birkmire, R. W.

PY - 2007/1

Y1 - 2007/1

N2 - Copper sulfide (CuxS) films were studied as a back contact material for CdTe solar cells. The CuxS films were made by chemical bath deposition in aqueous solution. Annealing at 200° C in Ar improved the performance of the solar cells. Using the CdS/CdTe/CuxS/C structure, an open-circuit voltage (Voc) higher than 840 mV and an energy conversion efficiency higher than 11% were obtained.

AB - Copper sulfide (CuxS) films were studied as a back contact material for CdTe solar cells. The CuxS films were made by chemical bath deposition in aqueous solution. Annealing at 200° C in Ar improved the performance of the solar cells. Using the CdS/CdTe/CuxS/C structure, an open-circuit voltage (Voc) higher than 840 mV and an energy conversion efficiency higher than 11% were obtained.

KW - Cadmium telluride

KW - Contact resistance

KW - Copper sulfide

KW - Solar cells

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M3 - Article

AN - SCOPUS:34147106430

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JF - Revista Mexicana de Fisica E

IS - 1

ER -

Cu_xS back contact for CdTe solar cells

Abstract

Keywords

ASJC Scopus subject areas

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