Abstract
AlGaInAs/InGaAs multiple-quantum-well (MQW) 1.52-μm laser diodes are fabricated. The Al-GaInAs barrier is grown by using a digital alloy molecular beam epitaxy technique and is lattice-matched to InP. An internal loss of 13 cm-1, an internal quantum efficiency of 41 %, and a threshold current density of 0.88 kA/cm2 are obtained from broad-area lasers. The characteristic temperature is constant at 70 K up to 50 °C and then decreases to 60 K in the range of 50 - 90 °C. A single-uncoated-facet CW output power as high as 0.5 W is demonstrated, which is the first room-temperature operation of the digital alloy 1.5-μm AlGaInAs material system.
| Original language | English |
|---|---|
| Pages (from-to) | 51-54 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 43 |
| Issue number | 1 |
| Publication status | Published - 2003 Jul |
Keywords
- AlGaInAs
- Digital Alloy
- MQWs
ASJC Scopus subject areas
- Physics and Astronomy(all)