CW 0.5-W 1.52-μm digital alloy AlGaInAs-InP multiple-quantum-well lasers

Du Chang Heo, Jin Dong Song, Il Ki Han, Jung Il Lee, Jichai Jeong, Jong Min Kim, Yong Tak Lee

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

AlGaInAs/InGaAs multiple-quantum-well (MQW) 1.52-μm laser diodes are fabricated. The Al-GaInAs barrier is grown by using a digital alloy molecular beam epitaxy technique and is lattice-matched to InP. An internal loss of 13 cm-1, an internal quantum efficiency of 41 %, and a threshold current density of 0.88 kA/cm2 are obtained from broad-area lasers. The characteristic temperature is constant at 70 K up to 50 °C and then decreases to 60 K in the range of 50 - 90 °C. A single-uncoated-facet CW output power as high as 0.5 W is demonstrated, which is the first room-temperature operation of the digital alloy 1.5-μm AlGaInAs material system.

Original languageEnglish
Pages (from-to)51-54
Number of pages4
JournalJournal of the Korean Physical Society
Volume43
Issue number1
Publication statusPublished - 2003 Jul 1

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Keywords

  • AlGaInAs
  • Digital Alloy
  • MQWs

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Heo, D. C., Song, J. D., Han, I. K., Lee, J. I., Jeong, J., Kim, J. M., & Lee, Y. T. (2003). CW 0.5-W 1.52-μm digital alloy AlGaInAs-InP multiple-quantum-well lasers. Journal of the Korean Physical Society, 43(1), 51-54.