Cyclic Thermal Effects on Devices of Two-Dimensional Layered Semiconducting Materials

Yeonsu Kim, Ben Kaczer, Devin Verreck, Alexander Grill, Doyoon Kim, Jaeick Song, Javier Diaz-Fortuny, Andrea Vici, Jongseon Park, Simon Van Beek, Marko Simicic, Erik Bury, Adrian Chasin, Dimitri Linten, Jaewoo Lee, Jungu Chun, Seongji Kim, Beumgeun Seo, Junhee Choi, Joon Hyung ShimKookjin Lee, Gyu Tae Kim

Research output: Contribution to journalArticlepeer-review

Abstract

Field-effect transistors (FETs), using transition metal dichalcogenides (TMD) as channels, have various types of interfaces, and their characteristics are sensitively changed in temperature and electrical stress. In this article, the effect of fast cyclic thermal stress on the performance of FETs using TMD as a channel is investigated and introduced. The Al2O3 passivation layer is deposited onto the TMD channel by atomic layer deposition process, and the hysteresis decreases and the direction changes from clockwise to counterclockwise. Applying cyclic thermal stress that rapidly heats and cools by 90 K in a 20 s cycle increases and decreases drain current repeatedly as charges move between the TMD channel and the interface traps. As cyclic thermal stress is applied, permanent interfacial damage occurs, resulting in increased interface trap density at the bottom and decreased hysteresis. These experimental results are also shown through technology computer-aided design simulations. In addition, series resistance and mobility attenuation factor increase due to the concentration of the conduction paths at the bottom of the channel.

Original languageEnglish
Article number2100348
JournalAdvanced Electronic Materials
Volume7
Issue number9
DOIs
Publication statusPublished - 2021 Sep

Keywords

  • cyclic thermal aging
  • field-effect transistors
  • interface traps
  • transition metal dichalcogenides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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