TY - JOUR
T1 - Cyclic Thermal Effects on Devices of Two-Dimensional Layered Semiconducting Materials
AU - Kim, Yeonsu
AU - Kaczer, Ben
AU - Verreck, Devin
AU - Grill, Alexander
AU - Kim, Doyoon
AU - Song, Jaeick
AU - Diaz-Fortuny, Javier
AU - Vici, Andrea
AU - Park, Jongseon
AU - Van Beek, Simon
AU - Simicic, Marko
AU - Bury, Erik
AU - Chasin, Adrian
AU - Linten, Dimitri
AU - Lee, Jaewoo
AU - Chun, Jungu
AU - Kim, Seongji
AU - Seo, Beumgeun
AU - Choi, Junhee
AU - Shim, Joon Hyung
AU - Lee, Kookjin
AU - Kim, Gyu Tae
N1 - Funding Information:
This research was supported by Nano‐Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (NRF‐2017M3A7B4049119, G.‐T.K.)
Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021/9
Y1 - 2021/9
N2 - Field-effect transistors (FETs), using transition metal dichalcogenides (TMD) as channels, have various types of interfaces, and their characteristics are sensitively changed in temperature and electrical stress. In this article, the effect of fast cyclic thermal stress on the performance of FETs using TMD as a channel is investigated and introduced. The Al2O3 passivation layer is deposited onto the TMD channel by atomic layer deposition process, and the hysteresis decreases and the direction changes from clockwise to counterclockwise. Applying cyclic thermal stress that rapidly heats and cools by 90 K in a 20 s cycle increases and decreases drain current repeatedly as charges move between the TMD channel and the interface traps. As cyclic thermal stress is applied, permanent interfacial damage occurs, resulting in increased interface trap density at the bottom and decreased hysteresis. These experimental results are also shown through technology computer-aided design simulations. In addition, series resistance and mobility attenuation factor increase due to the concentration of the conduction paths at the bottom of the channel.
AB - Field-effect transistors (FETs), using transition metal dichalcogenides (TMD) as channels, have various types of interfaces, and their characteristics are sensitively changed in temperature and electrical stress. In this article, the effect of fast cyclic thermal stress on the performance of FETs using TMD as a channel is investigated and introduced. The Al2O3 passivation layer is deposited onto the TMD channel by atomic layer deposition process, and the hysteresis decreases and the direction changes from clockwise to counterclockwise. Applying cyclic thermal stress that rapidly heats and cools by 90 K in a 20 s cycle increases and decreases drain current repeatedly as charges move between the TMD channel and the interface traps. As cyclic thermal stress is applied, permanent interfacial damage occurs, resulting in increased interface trap density at the bottom and decreased hysteresis. These experimental results are also shown through technology computer-aided design simulations. In addition, series resistance and mobility attenuation factor increase due to the concentration of the conduction paths at the bottom of the channel.
KW - cyclic thermal aging
KW - field-effect transistors
KW - interface traps
KW - transition metal dichalcogenides
UR - http://www.scopus.com/inward/record.url?scp=85108605999&partnerID=8YFLogxK
U2 - 10.1002/aelm.202100348
DO - 10.1002/aelm.202100348
M3 - Article
AN - SCOPUS:85108605999
VL - 7
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 9
M1 - 2100348
ER -