D-band heterodyne integrated imager in a 65-nm CMOS technology

Daekeun Yoon, Namhyung Kim, Kiryong Song, Jungsoo Kim, Seung Jae Oh, Jae-Sung Rieh

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A D-band heterodyne integrated imager, consisting of a mixer, an oscillator, an IF amplifier, and an IF detector, has been developed in a 65-nm CMOS technology. A measured responsivity of 720 kV/W and noise equivalent power (NEP) of 0.9 pW/Hz1/2 were obtained at 125 GHz. A total dc power of 74 mW was dissipated. The chip size is 1200 × 800 μ2 including contact pads and an input balun. A D-band image was acquired with the imager serving as a detector. A significant resolution enhancement was demonstrated with a near-field imaging achieved by a metal plate with a pinhole in the imaging setup.

Original languageEnglish
Article number7017460
Pages (from-to)196-198
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume25
Issue number3
DOIs
Publication statusPublished - 2015 Mar 1

Fingerprint

Image sensors
Intermediate frequency amplifiers
CMOS
Detectors
Imaging techniques
Plate metal
Mixer circuits
metal plates
detectors
pinholes
near fields
amplifiers
chips
oscillators
augmentation

Keywords

  • CMOS
  • CMOS integrated circuit
  • imaging
  • receivers

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

D-band heterodyne integrated imager in a 65-nm CMOS technology. / Yoon, Daekeun; Kim, Namhyung; Song, Kiryong; Kim, Jungsoo; Oh, Seung Jae; Rieh, Jae-Sung.

In: IEEE Microwave and Wireless Components Letters, Vol. 25, No. 3, 7017460, 01.03.2015, p. 196-198.

Research output: Contribution to journalArticle

Yoon, Daekeun ; Kim, Namhyung ; Song, Kiryong ; Kim, Jungsoo ; Oh, Seung Jae ; Rieh, Jae-Sung. / D-band heterodyne integrated imager in a 65-nm CMOS technology. In: IEEE Microwave and Wireless Components Letters. 2015 ; Vol. 25, No. 3. pp. 196-198.
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