D-band stacked amplifiers based on SiGe BiCMOS technology

Jongwon Yun, Hyunchul Kim, Kiryong Song, Jae-Sung Rieh

Research output: Contribution to journalArticle

Abstract

This paper presents two 3-stage D-band stacked amplifiers developed in a 0.13-μm SiGe BiCMOS technology, employed to compare the conventional cascode topology and the common-base (CB)/CB stacked topology. AMP1 employs two cascode stages followed by a CB/CB stacked stage, while AMP2 is composed of three CB/CB stacked stages. AMP1 showed a 17.1 dB peak gain at 143.8 GHz and a saturation output power of -4.2 dBm, while AMP2 showed a 20.4 dB peak gain at 150.6 GHz and a saturation output power of -1.3 dBm. The respective power dissipation was 42.9 mW and 59.4 mW for the two amplifiers. The results show that CB/CB stacked topology is favored over cascode topology in terms of gain near 140 GHz.

Original languageEnglish
Pages (from-to)277-279
Number of pages3
JournalJournal of Semiconductor Technology and Science
Volume15
Issue number2
DOIs
Publication statusPublished - 2015 Apr 1

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BiCMOS technology
Topology
Energy dissipation

Keywords

  • Cascode
  • Common emitter
  • Common-base
  • D-band
  • SiGe HBT
  • Stacked

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

D-band stacked amplifiers based on SiGe BiCMOS technology. / Yun, Jongwon; Kim, Hyunchul; Song, Kiryong; Rieh, Jae-Sung.

In: Journal of Semiconductor Technology and Science, Vol. 15, No. 2, 01.04.2015, p. 277-279.

Research output: Contribution to journalArticle

Yun, Jongwon ; Kim, Hyunchul ; Song, Kiryong ; Rieh, Jae-Sung. / D-band stacked amplifiers based on SiGe BiCMOS technology. In: Journal of Semiconductor Technology and Science. 2015 ; Vol. 15, No. 2. pp. 277-279.
@article{5a7bfc002e4341e2902ad07708cebaaf,
title = "D-band stacked amplifiers based on SiGe BiCMOS technology",
abstract = "This paper presents two 3-stage D-band stacked amplifiers developed in a 0.13-μm SiGe BiCMOS technology, employed to compare the conventional cascode topology and the common-base (CB)/CB stacked topology. AMP1 employs two cascode stages followed by a CB/CB stacked stage, while AMP2 is composed of three CB/CB stacked stages. AMP1 showed a 17.1 dB peak gain at 143.8 GHz and a saturation output power of -4.2 dBm, while AMP2 showed a 20.4 dB peak gain at 150.6 GHz and a saturation output power of -1.3 dBm. The respective power dissipation was 42.9 mW and 59.4 mW for the two amplifiers. The results show that CB/CB stacked topology is favored over cascode topology in terms of gain near 140 GHz.",
keywords = "Cascode, Common emitter, Common-base, D-band, SiGe HBT, Stacked",
author = "Jongwon Yun and Hyunchul Kim and Kiryong Song and Jae-Sung Rieh",
year = "2015",
month = "4",
day = "1",
doi = "10.5573/JSTS.2015.15.2.276",
language = "English",
volume = "15",
pages = "277--279",
journal = "Journal of Semiconductor Technology and Science",
issn = "1598-1657",
publisher = "Institute of Electronics Engineers of Korea",
number = "2",

}

TY - JOUR

T1 - D-band stacked amplifiers based on SiGe BiCMOS technology

AU - Yun, Jongwon

AU - Kim, Hyunchul

AU - Song, Kiryong

AU - Rieh, Jae-Sung

PY - 2015/4/1

Y1 - 2015/4/1

N2 - This paper presents two 3-stage D-band stacked amplifiers developed in a 0.13-μm SiGe BiCMOS technology, employed to compare the conventional cascode topology and the common-base (CB)/CB stacked topology. AMP1 employs two cascode stages followed by a CB/CB stacked stage, while AMP2 is composed of three CB/CB stacked stages. AMP1 showed a 17.1 dB peak gain at 143.8 GHz and a saturation output power of -4.2 dBm, while AMP2 showed a 20.4 dB peak gain at 150.6 GHz and a saturation output power of -1.3 dBm. The respective power dissipation was 42.9 mW and 59.4 mW for the two amplifiers. The results show that CB/CB stacked topology is favored over cascode topology in terms of gain near 140 GHz.

AB - This paper presents two 3-stage D-band stacked amplifiers developed in a 0.13-μm SiGe BiCMOS technology, employed to compare the conventional cascode topology and the common-base (CB)/CB stacked topology. AMP1 employs two cascode stages followed by a CB/CB stacked stage, while AMP2 is composed of three CB/CB stacked stages. AMP1 showed a 17.1 dB peak gain at 143.8 GHz and a saturation output power of -4.2 dBm, while AMP2 showed a 20.4 dB peak gain at 150.6 GHz and a saturation output power of -1.3 dBm. The respective power dissipation was 42.9 mW and 59.4 mW for the two amplifiers. The results show that CB/CB stacked topology is favored over cascode topology in terms of gain near 140 GHz.

KW - Cascode

KW - Common emitter

KW - Common-base

KW - D-band

KW - SiGe HBT

KW - Stacked

UR - http://www.scopus.com/inward/record.url?scp=84929465295&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84929465295&partnerID=8YFLogxK

U2 - 10.5573/JSTS.2015.15.2.276

DO - 10.5573/JSTS.2015.15.2.276

M3 - Article

AN - SCOPUS:84929465295

VL - 15

SP - 277

EP - 279

JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

SN - 1598-1657

IS - 2

ER -