Damage-Free Plasma Etching to Enhance Performance of AlGaInP-Based Micro-Light Emitting Diode

Sang Youl Lee, Eunduk Lee, Ji Hyung Moon, Byoungjun Choi, Jeong Tak Oh, Hwan Hee Jeong, Tae Yeon Seong, Hiroshi Amano

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We investigated the effect of plasma-etching on the electrical and optical performance of lateral AlGaInP-based red micro-LEDs as a function of etching time, where plasma-etched Ag particles were used as masks. For the sample etched for 12 s, around 33% of the sample surface were randomly etched, whereas for the sample etched for 24 s, nearly 60% were randomly etched with additional nanoscale hillocks. Regardless of etching times, all samples exhibited similar forward voltages of 1.944-1.929 V at $20~\mu \text{A}$ and reverse leakage currents of $1\times 10^{-8}$ A at -10 V. The micro-LEDs fabricated with 12 s-etched and 24 s-etched $p$ -GaP gave 26.2% and 42.3% higher light output powers at $20~\mu \text{A}$ , respectively, than the one with unetched $p$ -GaP. The $S$ parameter decreased with increasing forward current and etching time. The electroluminescence (EL) peak intensities of the micro-LEDs were consistent with their light output performance and included shoulder peaks at 612 nm. Emission images showed that the micro-LEDs with the 24 s-etched $p$ -GaP revealed the most intense and uniform emission area among the three samples.

Original languageEnglish
Article number9146513
Pages (from-to)1041-1044
Number of pages4
JournalIEEE Photonics Technology Letters
Issue number17
Publication statusPublished - 2020 Sept 1


  • Ag particle
  • AlGaInP
  • Micro-light emitting diode
  • plasmaetching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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