Dark current analysis in InAs quantum-dot APDs with different mesa structures

Dong Ho Kim, Hong Joo Song, Cheong Hyun Roh, Cheol Koo Hahn, Noriaki Tsurumachi, Hee Dong Kim, Tae Geun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We investigated the changes in the dark currents in InAs quantum-dot (QD) avalanche photodiodes (APDs) with different shapes of mesas. The APDs were fabricated by using inductively coupled plasma/reactive ion etching (ICP/RIE) or H 3PO 4 chemical etching. The dark currents (I dark) were observed to be 27 pA for the H 3PO 4-treated APD and 10 pA for the ICP/RIE-treated APD at -11 V at room temperature (RT). Then, to identify the effect of the mesas on the I dark of APDs, we measured the temperature-dependent (TD) I-V and C-V characteristics. As a result, we found that at temperatures below 200 K, the TD I dark of the H 3PO 4-treated APD was still 3 times larger than that of the ICP/RIE-treated APD, while the change of capacitance (ΔC) was 1.09 nF for the H 3PO 4-treated APD and 0.63 nF for the ICP/RIE-treated APD at voltages from 0 V to -12 V. These results indicate that the I dark of the APDs may be strongly affected by mesas and by the surface conditions of the device and that bulk tunneling and surface leakage shunt currents due to strong electric fields may be the dominant components that determine theI dark of the H 3PO 4-treated APD.

Original languageEnglish
Pages (from-to)1215-1218
Number of pages4
JournalJournal of the Korean Physical Society
Volume55
Issue number3
Publication statusPublished - 2009 Sep 1

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mesas
dark current
avalanches
photodiodes
quantum dots
etching
ions
shunts
temperature
leakage
capacitance

Keywords

  • Avalanche photodiode (APD)
  • Dark current
  • InAs quantum-dots (QDs)
  • Mesas

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kim, D. H., Song, H. J., Roh, C. H., Hahn, C. K., Tsurumachi, N., Kim, H. D., & Kim, T. G. (2009). Dark current analysis in InAs quantum-dot APDs with different mesa structures. Journal of the Korean Physical Society, 55(3), 1215-1218.

Dark current analysis in InAs quantum-dot APDs with different mesa structures. / Kim, Dong Ho; Song, Hong Joo; Roh, Cheong Hyun; Hahn, Cheol Koo; Tsurumachi, Noriaki; Kim, Hee Dong; Kim, Tae Geun.

In: Journal of the Korean Physical Society, Vol. 55, No. 3, 01.09.2009, p. 1215-1218.

Research output: Contribution to journalArticle

Kim, DH, Song, HJ, Roh, CH, Hahn, CK, Tsurumachi, N, Kim, HD & Kim, TG 2009, 'Dark current analysis in InAs quantum-dot APDs with different mesa structures', Journal of the Korean Physical Society, vol. 55, no. 3, pp. 1215-1218.
Kim DH, Song HJ, Roh CH, Hahn CK, Tsurumachi N, Kim HD et al. Dark current analysis in InAs quantum-dot APDs with different mesa structures. Journal of the Korean Physical Society. 2009 Sep 1;55(3):1215-1218.
Kim, Dong Ho ; Song, Hong Joo ; Roh, Cheong Hyun ; Hahn, Cheol Koo ; Tsurumachi, Noriaki ; Kim, Hee Dong ; Kim, Tae Geun. / Dark current analysis in InAs quantum-dot APDs with different mesa structures. In: Journal of the Korean Physical Society. 2009 ; Vol. 55, No. 3. pp. 1215-1218.
@article{e65d396cf6784a37a31ffb10d177c14a,
title = "Dark current analysis in InAs quantum-dot APDs with different mesa structures",
abstract = "We investigated the changes in the dark currents in InAs quantum-dot (QD) avalanche photodiodes (APDs) with different shapes of mesas. The APDs were fabricated by using inductively coupled plasma/reactive ion etching (ICP/RIE) or H 3PO 4 chemical etching. The dark currents (I dark) were observed to be 27 pA for the H 3PO 4-treated APD and 10 pA for the ICP/RIE-treated APD at -11 V at room temperature (RT). Then, to identify the effect of the mesas on the I dark of APDs, we measured the temperature-dependent (TD) I-V and C-V characteristics. As a result, we found that at temperatures below 200 K, the TD I dark of the H 3PO 4-treated APD was still 3 times larger than that of the ICP/RIE-treated APD, while the change of capacitance (ΔC) was 1.09 nF for the H 3PO 4-treated APD and 0.63 nF for the ICP/RIE-treated APD at voltages from 0 V to -12 V. These results indicate that the I dark of the APDs may be strongly affected by mesas and by the surface conditions of the device and that bulk tunneling and surface leakage shunt currents due to strong electric fields may be the dominant components that determine theI dark of the H 3PO 4-treated APD.",
keywords = "Avalanche photodiode (APD), Dark current, InAs quantum-dots (QDs), Mesas",
author = "Kim, {Dong Ho} and Song, {Hong Joo} and Roh, {Cheong Hyun} and Hahn, {Cheol Koo} and Noriaki Tsurumachi and Kim, {Hee Dong} and Kim, {Tae Geun}",
year = "2009",
month = "9",
day = "1",
language = "English",
volume = "55",
pages = "1215--1218",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "3",

}

TY - JOUR

T1 - Dark current analysis in InAs quantum-dot APDs with different mesa structures

AU - Kim, Dong Ho

AU - Song, Hong Joo

AU - Roh, Cheong Hyun

AU - Hahn, Cheol Koo

AU - Tsurumachi, Noriaki

AU - Kim, Hee Dong

AU - Kim, Tae Geun

PY - 2009/9/1

Y1 - 2009/9/1

N2 - We investigated the changes in the dark currents in InAs quantum-dot (QD) avalanche photodiodes (APDs) with different shapes of mesas. The APDs were fabricated by using inductively coupled plasma/reactive ion etching (ICP/RIE) or H 3PO 4 chemical etching. The dark currents (I dark) were observed to be 27 pA for the H 3PO 4-treated APD and 10 pA for the ICP/RIE-treated APD at -11 V at room temperature (RT). Then, to identify the effect of the mesas on the I dark of APDs, we measured the temperature-dependent (TD) I-V and C-V characteristics. As a result, we found that at temperatures below 200 K, the TD I dark of the H 3PO 4-treated APD was still 3 times larger than that of the ICP/RIE-treated APD, while the change of capacitance (ΔC) was 1.09 nF for the H 3PO 4-treated APD and 0.63 nF for the ICP/RIE-treated APD at voltages from 0 V to -12 V. These results indicate that the I dark of the APDs may be strongly affected by mesas and by the surface conditions of the device and that bulk tunneling and surface leakage shunt currents due to strong electric fields may be the dominant components that determine theI dark of the H 3PO 4-treated APD.

AB - We investigated the changes in the dark currents in InAs quantum-dot (QD) avalanche photodiodes (APDs) with different shapes of mesas. The APDs were fabricated by using inductively coupled plasma/reactive ion etching (ICP/RIE) or H 3PO 4 chemical etching. The dark currents (I dark) were observed to be 27 pA for the H 3PO 4-treated APD and 10 pA for the ICP/RIE-treated APD at -11 V at room temperature (RT). Then, to identify the effect of the mesas on the I dark of APDs, we measured the temperature-dependent (TD) I-V and C-V characteristics. As a result, we found that at temperatures below 200 K, the TD I dark of the H 3PO 4-treated APD was still 3 times larger than that of the ICP/RIE-treated APD, while the change of capacitance (ΔC) was 1.09 nF for the H 3PO 4-treated APD and 0.63 nF for the ICP/RIE-treated APD at voltages from 0 V to -12 V. These results indicate that the I dark of the APDs may be strongly affected by mesas and by the surface conditions of the device and that bulk tunneling and surface leakage shunt currents due to strong electric fields may be the dominant components that determine theI dark of the H 3PO 4-treated APD.

KW - Avalanche photodiode (APD)

KW - Dark current

KW - InAs quantum-dots (QDs)

KW - Mesas

UR - http://www.scopus.com/inward/record.url?scp=70350277718&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70350277718&partnerID=8YFLogxK

M3 - Article

VL - 55

SP - 1215

EP - 1218

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 3

ER -