Dark current suppression in an erbium-germanium-erbium photodetector with an asymmetric electrode area

Jin Hong Park, Hyun-Yong Yu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this work, suppression of the dark current level in a metal-semiconductor-metal (MSM) photodetector fabricated on the intrinsic (i) Ge is achieved by exploiting (1) the Er electrode, providing a relatively high hole barrier, and (2) the concept of asymmetric electrode area, to minimize the Schottky barrier height lowering effect. Compared with a symmetric MSM photodetector fabricated with Ti electrodes, the dark current level was reduced by a factor of about 80. This low dark current i-Ge MSM photodetector is promising for applications requiring low power and a high photo-to-dark-current ratio.

Original languageEnglish
Pages (from-to)1182-1184
Number of pages3
JournalOptics Letters
Volume36
Issue number7
DOIs
Publication statusPublished - 2011 Apr 1
Externally publishedYes

Fingerprint

Erbium
Germanium
dark current
erbium
photometers
germanium
Electrodes
Metals
retarding
Semiconductors
electrodes
metals

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Dark current suppression in an erbium-germanium-erbium photodetector with an asymmetric electrode area. / Park, Jin Hong; Yu, Hyun-Yong.

In: Optics Letters, Vol. 36, No. 7, 01.04.2011, p. 1182-1184.

Research output: Contribution to journalArticle

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