De-doping of graphene by Joule heating with water

Joonkyu Park, Dong Whan Kim, Ju Yeon Woo, Jun Lee, Chang-Soo Han

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report the restoration of electrical properties found in graphene field-effect transistors (G-FETs) Joule heated with water. Since polymer contaminates the graphene surface during the transfer process and device fabrication, the graphene becomes p-doped so that we can hardly measure its charge neutrality point (CNP) with a gate voltage even up to 100 V. When the p-doped G-FET covered by water is Joule heated, on the other hand, the CNP is restored almost to the zero gate voltage. Based on the results derived from I d-V g characteristics and Raman spectroscopy, we argue that the polymers on graphene were removed whilst it was Joule heated, resulting in high de-doping of the graphene, leading to the easy process for the fabrication of high performance G-FET.

Original languageEnglish
Article number455102
JournalJournal of Physics D: Applied Physics
Volume48
Issue number45
DOIs
Publication statusPublished - 2015 Oct 6

Keywords

  • Graphene
  • Joule heating
  • water de-doping

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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