De-doping of graphene by Joule heating with water

Joonkyu Park, Dong Whan Kim, Ju Yeon Woo, Jun Lee, Chang-Soo Han

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report the restoration of electrical properties found in graphene field-effect transistors (G-FETs) Joule heated with water. Since polymer contaminates the graphene surface during the transfer process and device fabrication, the graphene becomes p-doped so that we can hardly measure its charge neutrality point (CNP) with a gate voltage even up to 100 V. When the p-doped G-FET covered by water is Joule heated, on the other hand, the CNP is restored almost to the zero gate voltage. Based on the results derived from I d-V g characteristics and Raman spectroscopy, we argue that the polymers on graphene were removed whilst it was Joule heated, resulting in high de-doping of the graphene, leading to the easy process for the fabrication of high performance G-FET.

Original languageEnglish
Article number455102
JournalJournal of Physics D: Applied Physics
Volume48
Issue number45
DOIs
Publication statusPublished - 2015 Oct 6

Fingerprint

Joule heating
Graphite
Graphene
graphene
Doping (additives)
Water
water
Field effect transistors
field effect transistors
Polymers
Fabrication
fabrication
polymers
Electric potential
electric potential
restoration
Restoration
Raman spectroscopy
Electric properties
electrical properties

Keywords

  • Graphene
  • Joule heating
  • water de-doping

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

De-doping of graphene by Joule heating with water. / Park, Joonkyu; Kim, Dong Whan; Woo, Ju Yeon; Lee, Jun; Han, Chang-Soo.

In: Journal of Physics D: Applied Physics, Vol. 48, No. 45, 455102, 06.10.2015.

Research output: Contribution to journalArticle

Park, Joonkyu ; Kim, Dong Whan ; Woo, Ju Yeon ; Lee, Jun ; Han, Chang-Soo. / De-doping of graphene by Joule heating with water. In: Journal of Physics D: Applied Physics. 2015 ; Vol. 48, No. 45.
@article{2dee6d960a6e44a7a2a4b7000f105e9a,
title = "De-doping of graphene by Joule heating with water",
abstract = "We report the restoration of electrical properties found in graphene field-effect transistors (G-FETs) Joule heated with water. Since polymer contaminates the graphene surface during the transfer process and device fabrication, the graphene becomes p-doped so that we can hardly measure its charge neutrality point (CNP) with a gate voltage even up to 100 V. When the p-doped G-FET covered by water is Joule heated, on the other hand, the CNP is restored almost to the zero gate voltage. Based on the results derived from I d-V g characteristics and Raman spectroscopy, we argue that the polymers on graphene were removed whilst it was Joule heated, resulting in high de-doping of the graphene, leading to the easy process for the fabrication of high performance G-FET.",
keywords = "Graphene, Joule heating, water de-doping",
author = "Joonkyu Park and Kim, {Dong Whan} and Woo, {Ju Yeon} and Jun Lee and Chang-Soo Han",
year = "2015",
month = "10",
day = "6",
doi = "10.1088/0022-3727/48/45/455102",
language = "English",
volume = "48",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "45",

}

TY - JOUR

T1 - De-doping of graphene by Joule heating with water

AU - Park, Joonkyu

AU - Kim, Dong Whan

AU - Woo, Ju Yeon

AU - Lee, Jun

AU - Han, Chang-Soo

PY - 2015/10/6

Y1 - 2015/10/6

N2 - We report the restoration of electrical properties found in graphene field-effect transistors (G-FETs) Joule heated with water. Since polymer contaminates the graphene surface during the transfer process and device fabrication, the graphene becomes p-doped so that we can hardly measure its charge neutrality point (CNP) with a gate voltage even up to 100 V. When the p-doped G-FET covered by water is Joule heated, on the other hand, the CNP is restored almost to the zero gate voltage. Based on the results derived from I d-V g characteristics and Raman spectroscopy, we argue that the polymers on graphene were removed whilst it was Joule heated, resulting in high de-doping of the graphene, leading to the easy process for the fabrication of high performance G-FET.

AB - We report the restoration of electrical properties found in graphene field-effect transistors (G-FETs) Joule heated with water. Since polymer contaminates the graphene surface during the transfer process and device fabrication, the graphene becomes p-doped so that we can hardly measure its charge neutrality point (CNP) with a gate voltage even up to 100 V. When the p-doped G-FET covered by water is Joule heated, on the other hand, the CNP is restored almost to the zero gate voltage. Based on the results derived from I d-V g characteristics and Raman spectroscopy, we argue that the polymers on graphene were removed whilst it was Joule heated, resulting in high de-doping of the graphene, leading to the easy process for the fabrication of high performance G-FET.

KW - Graphene

KW - Joule heating

KW - water de-doping

UR - http://www.scopus.com/inward/record.url?scp=84947081101&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84947081101&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/48/45/455102

DO - 10.1088/0022-3727/48/45/455102

M3 - Article

AN - SCOPUS:84947081101

VL - 48

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 45

M1 - 455102

ER -