Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, Tae Hoon Chung, P. B. Lagov, R. A. Zinov’ev, S. J. Pearton

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Deep electron and hole trap spectra and electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before and after 6 MeV electron irradiation. Starting with a fluence of 5 × 1015 cm−2, electron irradiation increased the concentration of existing electron traps with levels at Ec−0.5 eV and introduced new electron traps with levels near Ec−1 eV. The latter are the well known radiation defects formed in the GaN barriers of the GaN/InGaN MQW region. The degradation of the EL efficiency after irradiation correlates with changes of the Ec−0.5 eV and Ec−1 eV electron trap density, suggesting these are effective non-radiative recombination centers. By sharp contrast, the concentration of the dominant hole traps with levels near Ev+0.45 eV decreased after, which eliminates these from the role of Shockley-Read-Hall defects actively participating in recombination.

Original languageEnglish
Pages (from-to)Q217-Q131
JournalECS Journal of Solid State Science and Technology
Issue number10
Publication statusPublished - 2017 Jan 1


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lee, I-H., Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Chung, T. H., Lagov, P. B., Zinov’ev, R. A., & Pearton, S. J. (2017). Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes. ECS Journal of Solid State Science and Technology, 6(10), Q217-Q131.