Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, Tae Hoon Chung, P. B. Lagov, R. A. Zinov’ev, S. J. Pearton

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Deep electron and hole trap spectra and electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before and after 6 MeV electron irradiation. Starting with a fluence of 5 × 1015 cm−2, electron irradiation increased the concentration of existing electron traps with levels at Ec−0.5 eV and introduced new electron traps with levels near Ec−1 eV. The latter are the well known radiation defects formed in the GaN barriers of the GaN/InGaN MQW region. The degradation of the EL efficiency after irradiation correlates with changes of the Ec−0.5 eV and Ec−1 eV electron trap density, suggesting these are effective non-radiative recombination centers. By sharp contrast, the concentration of the dominant hole traps with levels near Ev+0.45 eV decreased after, which eliminates these from the role of Shockley-Read-Hall defects actively participating in recombination.

Original languageEnglish
Pages (from-to)Q217-Q131
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number10
DOIs
Publication statusPublished - 2017 Jan 1

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Hole traps
Electron traps
Light emitting diodes
Electron irradiation
Electrons
Electroluminescence
Semiconductor quantum wells
Defects
Irradiation
Radiation
Degradation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lee, I-H., Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Chung, T. H., Lagov, P. B., ... Pearton, S. J. (2017). Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes. ECS Journal of Solid State Science and Technology, 6(10), Q217-Q131. https://doi.org/10.1149/2.0131710jss

Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes. / Lee, In-Hwan; Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Chung, Tae Hoon; Lagov, P. B.; Zinov’ev, R. A.; Pearton, S. J.

In: ECS Journal of Solid State Science and Technology, Vol. 6, No. 10, 01.01.2017, p. Q217-Q131.

Research output: Contribution to journalArticle

Lee, I-H, Polyakov, AY, Smirnov, NB, Shchemerov, IV, Chung, TH, Lagov, PB, Zinov’ev, RA & Pearton, SJ 2017, 'Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes', ECS Journal of Solid State Science and Technology, vol. 6, no. 10, pp. Q217-Q131. https://doi.org/10.1149/2.0131710jss
Lee, In-Hwan ; Polyakov, A. Y. ; Smirnov, N. B. ; Shchemerov, I. V. ; Chung, Tae Hoon ; Lagov, P. B. ; Zinov’ev, R. A. ; Pearton, S. J. / Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes. In: ECS Journal of Solid State Science and Technology. 2017 ; Vol. 6, No. 10. pp. Q217-Q131.
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AU - Chung, Tae Hoon

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