Deep electron and hole traps in neutron transmutation doped n-GaN

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, N. G. Kolin, V. M. Boiko, A. V. Korulin, S. J. Pearton

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

In neutron transmutation doped n-GaN, the electrical properties are found to be dominated not by shallow Ge donors produced by interaction of thermal neutrons with Ga, but by electron traps at 0.45 or 0.2 eV. The traps switch from the former to the latter when the anneal temperature increased from 800 to 1000 °C. The concentrations of both traps rose linearly with neutron fluence and were close to the concentration of Ge donors, suggesting they are Ge complexed with different radiation defects. The authors note the similarity of the properties of these traps to the properties of the dominant electron traps in as-irradiated n-GaN. They also observed prominent hole traps with a level near Ev +1.2 eV. These traps were not detected in virgin or as-irradiated samples. The concentration of the 1.2 eV hole traps increased linearly with neutron fluence, and these traps were assigned to Ga vacancy complexes with oxygen.

Original languageEnglish
Article number041201
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume29
Issue number4
DOIs
Publication statusPublished - 2011 Jan 1
Externally publishedYes

Fingerprint

Hole traps
Electron traps
nuclear reactions
Neutrons
traps
electrons
Vacancies
Electric properties
Switches
fluence
Oxygen
Radiation
Defects
neutrons
thermal neutrons
switches
electrical properties
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Lee, I-H., Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Kolin, N. G., ... Pearton, S. J. (2011). Deep electron and hole traps in neutron transmutation doped n-GaN. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 29(4), [041201]. https://doi.org/10.1116/1.3596571

Deep electron and hole traps in neutron transmutation doped n-GaN. / Lee, In-Hwan; Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Kolin, N. G.; Boiko, V. M.; Korulin, A. V.; Pearton, S. J.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 29, No. 4, 041201, 01.01.2011.

Research output: Contribution to journalArticle

Lee, I-H, Polyakov, AY, Smirnov, NB, Govorkov, AV, Kozhukhova, EA, Kolin, NG, Boiko, VM, Korulin, AV & Pearton, SJ 2011, 'Deep electron and hole traps in neutron transmutation doped n-GaN', Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, vol. 29, no. 4, 041201. https://doi.org/10.1116/1.3596571
Lee, In-Hwan ; Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Kozhukhova, E. A. ; Kolin, N. G. ; Boiko, V. M. ; Korulin, A. V. ; Pearton, S. J. / Deep electron and hole traps in neutron transmutation doped n-GaN. In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2011 ; Vol. 29, No. 4.
@article{474de66a645e4b45994213db5c8a12d2,
title = "Deep electron and hole traps in neutron transmutation doped n-GaN",
abstract = "In neutron transmutation doped n-GaN, the electrical properties are found to be dominated not by shallow Ge donors produced by interaction of thermal neutrons with Ga, but by electron traps at 0.45 or 0.2 eV. The traps switch from the former to the latter when the anneal temperature increased from 800 to 1000 °C. The concentrations of both traps rose linearly with neutron fluence and were close to the concentration of Ge donors, suggesting they are Ge complexed with different radiation defects. The authors note the similarity of the properties of these traps to the properties of the dominant electron traps in as-irradiated n-GaN. They also observed prominent hole traps with a level near Ev +1.2 eV. These traps were not detected in virgin or as-irradiated samples. The concentration of the 1.2 eV hole traps increased linearly with neutron fluence, and these traps were assigned to Ga vacancy complexes with oxygen.",
author = "In-Hwan Lee and Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Kozhukhova, {E. A.} and Kolin, {N. G.} and Boiko, {V. M.} and Korulin, {A. V.} and Pearton, {S. J.}",
year = "2011",
month = "1",
day = "1",
doi = "10.1116/1.3596571",
language = "English",
volume = "29",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Deep electron and hole traps in neutron transmutation doped n-GaN

AU - Lee, In-Hwan

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Kolin, N. G.

AU - Boiko, V. M.

AU - Korulin, A. V.

AU - Pearton, S. J.

PY - 2011/1/1

Y1 - 2011/1/1

N2 - In neutron transmutation doped n-GaN, the electrical properties are found to be dominated not by shallow Ge donors produced by interaction of thermal neutrons with Ga, but by electron traps at 0.45 or 0.2 eV. The traps switch from the former to the latter when the anneal temperature increased from 800 to 1000 °C. The concentrations of both traps rose linearly with neutron fluence and were close to the concentration of Ge donors, suggesting they are Ge complexed with different radiation defects. The authors note the similarity of the properties of these traps to the properties of the dominant electron traps in as-irradiated n-GaN. They also observed prominent hole traps with a level near Ev +1.2 eV. These traps were not detected in virgin or as-irradiated samples. The concentration of the 1.2 eV hole traps increased linearly with neutron fluence, and these traps were assigned to Ga vacancy complexes with oxygen.

AB - In neutron transmutation doped n-GaN, the electrical properties are found to be dominated not by shallow Ge donors produced by interaction of thermal neutrons with Ga, but by electron traps at 0.45 or 0.2 eV. The traps switch from the former to the latter when the anneal temperature increased from 800 to 1000 °C. The concentrations of both traps rose linearly with neutron fluence and were close to the concentration of Ge donors, suggesting they are Ge complexed with different radiation defects. The authors note the similarity of the properties of these traps to the properties of the dominant electron traps in as-irradiated n-GaN. They also observed prominent hole traps with a level near Ev +1.2 eV. These traps were not detected in virgin or as-irradiated samples. The concentration of the 1.2 eV hole traps increased linearly with neutron fluence, and these traps were assigned to Ga vacancy complexes with oxygen.

UR - http://www.scopus.com/inward/record.url?scp=80051891515&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80051891515&partnerID=8YFLogxK

U2 - 10.1116/1.3596571

DO - 10.1116/1.3596571

M3 - Article

AN - SCOPUS:80051891515

VL - 29

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 4

M1 - 041201

ER -