Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles

A. Y. Polyakov, N. B. Smirnov, E. B. Yakimov, Han Su Cho, Jong Hyeob Baek, A. V. Turutin, I. V. Shemerov, E. S. Kondratyev, In-Hwan Lee

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Deep traps spectra are compared forGaN/InGaN light emitting diodeswith andwithout a template embeddedwith SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.

Original languageEnglish
Pages (from-to)Q274-Q277
JournalECS Journal of Solid State Science and Technology
Volume5
Issue number10
DOIs
Publication statusPublished - 2016 Jan 1
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this