Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles

A. Y. Polyakov, N. B. Smirnov, E. B. Yakimov, Han Su Cho, Jong Hyeob Baek, A. V. Turutin, I. V. Shemerov, E. S. Kondratyev, In-Hwan Lee

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Deep traps spectra are compared forGaN/InGaN light emitting diodeswith andwithout a template embeddedwith SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.

Original languageEnglish
Pages (from-to)Q274-Q277
JournalECS Journal of Solid State Science and Technology
Volume5
Issue number10
DOIs
Publication statusPublished - 2016 Jan 1
Externally publishedYes

Fingerprint

Electron traps
Quantum efficiency
Light emitting diodes
Nanoparticles
Spectrum analysis
Semiconductor quantum wells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles. / Polyakov, A. Y.; Smirnov, N. B.; Yakimov, E. B.; Cho, Han Su; Baek, Jong Hyeob; Turutin, A. V.; Shemerov, I. V.; Kondratyev, E. S.; Lee, In-Hwan.

In: ECS Journal of Solid State Science and Technology, Vol. 5, No. 10, 01.01.2016, p. Q274-Q277.

Research output: Contribution to journalArticle

Polyakov, A. Y. ; Smirnov, N. B. ; Yakimov, E. B. ; Cho, Han Su ; Baek, Jong Hyeob ; Turutin, A. V. ; Shemerov, I. V. ; Kondratyev, E. S. ; Lee, In-Hwan. / Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles. In: ECS Journal of Solid State Science and Technology. 2016 ; Vol. 5, No. 10. pp. Q274-Q277.
@article{3527f936b1a244c6b8d3fb2bf3d49139,
title = "Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles",
abstract = "Deep traps spectra are compared forGaN/InGaN light emitting diodeswith andwithout a template embeddedwith SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.",
author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Yakimov, {E. B.} and Cho, {Han Su} and Baek, {Jong Hyeob} and Turutin, {A. V.} and Shemerov, {I. V.} and Kondratyev, {E. S.} and In-Hwan Lee",
year = "2016",
month = "1",
day = "1",
doi = "10.1149/2.0051612jss",
language = "English",
volume = "5",
pages = "Q274--Q277",
journal = "ECS Journal of Solid State Science and Technology",
issn = "2162-8769",
publisher = "Electrochemical Society, Inc.",
number = "10",

}

TY - JOUR

T1 - Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Yakimov, E. B.

AU - Cho, Han Su

AU - Baek, Jong Hyeob

AU - Turutin, A. V.

AU - Shemerov, I. V.

AU - Kondratyev, E. S.

AU - Lee, In-Hwan

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Deep traps spectra are compared forGaN/InGaN light emitting diodeswith andwithout a template embeddedwith SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.

AB - Deep traps spectra are compared forGaN/InGaN light emitting diodeswith andwithout a template embeddedwith SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.

UR - http://www.scopus.com/inward/record.url?scp=84992202508&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84992202508&partnerID=8YFLogxK

U2 - 10.1149/2.0051612jss

DO - 10.1149/2.0051612jss

M3 - Article

AN - SCOPUS:84992202508

VL - 5

SP - Q274-Q277

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 10

ER -