@article{3527f936b1a244c6b8d3fb2bf3d49139,
title = "Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles",
abstract = "Deep traps spectra are compared forGaN/InGaN light emitting diodeswith andwithout a template embeddedwith SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.",
author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Yakimov, {E. B.} and Cho, {Han Su} and Baek, {Jong Hyeob} and Turutin, {A. V.} and Shemerov, {I. V.} and Kondratyev, {E. S.} and Lee, {In Hwan}",
note = "Funding Information: The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST {"}MISiS{"} (K2-2014-055). The work at Chonbuk National University was supported by the Technology Innovation Program (10053288) funded by the Ministry of Trade, Industry & Energy (MOTIE), Korea.∗%blankline%∗∗%blankline% Publisher Copyright: {\textcopyright} 2016 The Electrochemical Society.",
year = "2016",
doi = "10.1149/2.0051612jss",
language = "English",
volume = "5",
pages = "Q274--Q277",
journal = "ECS Journal of Solid State Science and Technology",
issn = "2162-8769",
publisher = "Electrochemical Society, Inc.",
number = "10",
}