Deep traps spectra are compared forGaN/InGaN light emitting diodeswith andwithout a template embeddedwith SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials