TY - JOUR
T1 - Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells
AU - Lee, H. S.
AU - Yamaguchi, M.
AU - Ekins-Daukes, N. J.
AU - Khan, A.
AU - Takamoto, T.
AU - Agui, T.
AU - Kamimura, K.
AU - Kaneiwa, M.
AU - Imaizumi, M.
AU - Ohshima, T.
AU - Itoh, H.
PY - 2005/11/1
Y1 - 2005/11/1
N2 - Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al0.08 Ga0.92) 0.52 In0.48 P diodes and solar cells. The carrier removal rate estimated in p -AlInGaP with electron fluence is about 1 cm-1, which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E ν +0.90±0.05 eV) was observed. The changes in carrier concentrations (Δp) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm-1, of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm-1, in p -AlInGaP. From the minority-carrier injection annealing (100 mA cm2), the annealing activation energy of H2 defect is ΔE=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (Vp - Pi). The recovery of defect concentration and carrier concentration in the irradiated p -AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center.
AB - Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al0.08 Ga0.92) 0.52 In0.48 P diodes and solar cells. The carrier removal rate estimated in p -AlInGaP with electron fluence is about 1 cm-1, which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E ν +0.90±0.05 eV) was observed. The changes in carrier concentrations (Δp) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm-1, of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm-1, in p -AlInGaP. From the minority-carrier injection annealing (100 mA cm2), the annealing activation energy of H2 defect is ΔE=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (Vp - Pi). The recovery of defect concentration and carrier concentration in the irradiated p -AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center.
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U2 - 10.1063/1.2115095
DO - 10.1063/1.2115095
M3 - Article
AN - SCOPUS:27844595011
VL - 98
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 9
M1 - 093701
ER -