Deep-level studies in GaN layers grown by epitaxial lateral overgrowth

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, S. J. Pearton

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The electrical properties, deep-level spectra, microcathodoluminescence (MCL) spectra and diffusion lengths of minority charge carriers were measured in GaN films grown by the epitaxial lateral overgrowth (ELOG) technique. The results are compared to the properties of GaN layers grown in a standard fashion without masking of the initial template. MCL and electron beam induced current (EBIC) imaging of the laterally overgrown regions revealed the presence of dark spots with density of 1-5 × 106 cm- 2 that are associated with individual dislocations. The concentration of deep electron and hole traps was found to be much higher in the standard material than in the ELOG material. Diffusion lengths of minority carriers determined from EBIC signal profiling gave values of 0.8-1 μm along the bright regions and 0.4-0.5 μm in the dark regions of the ELOG samples. Similar measurements on metal organic chemical vapor deposition templates gave a diffusion length of 0.4-0.5 μm, close to the diffusion length in the dark stripes of the ELOG samples.

Original languageEnglish
Pages (from-to)2035-2040
Number of pages6
JournalThin Solid Films
Volume516
Issue number8
DOIs
Publication statusPublished - 2008 Feb 29
Externally publishedYes

Fingerprint

diffusion length
Induced currents
Electron beams
templates
electron beams
Organic Chemicals
Hole traps
Electron traps
Organic chemicals
minorities
masking
minority carriers
Charge carriers
Dislocations (crystals)
metalorganic chemical vapor deposition
charge carriers
Chemical vapor deposition
Electric properties
Metals
electrical properties

Keywords

  • Deep-level transient spectroscopy
  • Electrical properties and measurements
  • Gallium nitride
  • Metal organic chemical vapor deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Lee, I-H., Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., & Pearton, S. J. (2008). Deep-level studies in GaN layers grown by epitaxial lateral overgrowth. Thin Solid Films, 516(8), 2035-2040. https://doi.org/10.1016/j.tsf.2007.07.144

Deep-level studies in GaN layers grown by epitaxial lateral overgrowth. / Lee, In-Hwan; Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Markov, A. V.; Pearton, S. J.

In: Thin Solid Films, Vol. 516, No. 8, 29.02.2008, p. 2035-2040.

Research output: Contribution to journalArticle

Lee, I-H, Polyakov, AY, Smirnov, NB, Govorkov, AV, Markov, AV & Pearton, SJ 2008, 'Deep-level studies in GaN layers grown by epitaxial lateral overgrowth', Thin Solid Films, vol. 516, no. 8, pp. 2035-2040. https://doi.org/10.1016/j.tsf.2007.07.144
Lee I-H, Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Pearton SJ. Deep-level studies in GaN layers grown by epitaxial lateral overgrowth. Thin Solid Films. 2008 Feb 29;516(8):2035-2040. https://doi.org/10.1016/j.tsf.2007.07.144
Lee, In-Hwan ; Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Markov, A. V. ; Pearton, S. J. / Deep-level studies in GaN layers grown by epitaxial lateral overgrowth. In: Thin Solid Films. 2008 ; Vol. 516, No. 8. pp. 2035-2040.
@article{c0f1bddf7ccd4fe4b0a1323a2edc2726,
title = "Deep-level studies in GaN layers grown by epitaxial lateral overgrowth",
abstract = "The electrical properties, deep-level spectra, microcathodoluminescence (MCL) spectra and diffusion lengths of minority charge carriers were measured in GaN films grown by the epitaxial lateral overgrowth (ELOG) technique. The results are compared to the properties of GaN layers grown in a standard fashion without masking of the initial template. MCL and electron beam induced current (EBIC) imaging of the laterally overgrown regions revealed the presence of dark spots with density of 1-5 × 106 cm- 2 that are associated with individual dislocations. The concentration of deep electron and hole traps was found to be much higher in the standard material than in the ELOG material. Diffusion lengths of minority carriers determined from EBIC signal profiling gave values of 0.8-1 μm along the bright regions and 0.4-0.5 μm in the dark regions of the ELOG samples. Similar measurements on metal organic chemical vapor deposition templates gave a diffusion length of 0.4-0.5 μm, close to the diffusion length in the dark stripes of the ELOG samples.",
keywords = "Deep-level transient spectroscopy, Electrical properties and measurements, Gallium nitride, Metal organic chemical vapor deposition",
author = "In-Hwan Lee and Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Markov, {A. V.} and Pearton, {S. J.}",
year = "2008",
month = "2",
day = "29",
doi = "10.1016/j.tsf.2007.07.144",
language = "English",
volume = "516",
pages = "2035--2040",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "8",

}

TY - JOUR

T1 - Deep-level studies in GaN layers grown by epitaxial lateral overgrowth

AU - Lee, In-Hwan

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Markov, A. V.

AU - Pearton, S. J.

PY - 2008/2/29

Y1 - 2008/2/29

N2 - The electrical properties, deep-level spectra, microcathodoluminescence (MCL) spectra and diffusion lengths of minority charge carriers were measured in GaN films grown by the epitaxial lateral overgrowth (ELOG) technique. The results are compared to the properties of GaN layers grown in a standard fashion without masking of the initial template. MCL and electron beam induced current (EBIC) imaging of the laterally overgrown regions revealed the presence of dark spots with density of 1-5 × 106 cm- 2 that are associated with individual dislocations. The concentration of deep electron and hole traps was found to be much higher in the standard material than in the ELOG material. Diffusion lengths of minority carriers determined from EBIC signal profiling gave values of 0.8-1 μm along the bright regions and 0.4-0.5 μm in the dark regions of the ELOG samples. Similar measurements on metal organic chemical vapor deposition templates gave a diffusion length of 0.4-0.5 μm, close to the diffusion length in the dark stripes of the ELOG samples.

AB - The electrical properties, deep-level spectra, microcathodoluminescence (MCL) spectra and diffusion lengths of minority charge carriers were measured in GaN films grown by the epitaxial lateral overgrowth (ELOG) technique. The results are compared to the properties of GaN layers grown in a standard fashion without masking of the initial template. MCL and electron beam induced current (EBIC) imaging of the laterally overgrown regions revealed the presence of dark spots with density of 1-5 × 106 cm- 2 that are associated with individual dislocations. The concentration of deep electron and hole traps was found to be much higher in the standard material than in the ELOG material. Diffusion lengths of minority carriers determined from EBIC signal profiling gave values of 0.8-1 μm along the bright regions and 0.4-0.5 μm in the dark regions of the ELOG samples. Similar measurements on metal organic chemical vapor deposition templates gave a diffusion length of 0.4-0.5 μm, close to the diffusion length in the dark stripes of the ELOG samples.

KW - Deep-level transient spectroscopy

KW - Electrical properties and measurements

KW - Gallium nitride

KW - Metal organic chemical vapor deposition

UR - http://www.scopus.com/inward/record.url?scp=38749141021&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38749141021&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2007.07.144

DO - 10.1016/j.tsf.2007.07.144

M3 - Article

AN - SCOPUS:38749141021

VL - 516

SP - 2035

EP - 2040

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 8

ER -