Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance

Alexander Y. Polyakov, Nikolai B. Smirnov, In-Hwan Lee, Stephen J. Pearton

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

A modification of deep level transient spectroscopy which varies the measurement frequency from 10 kHz to 1 MHz and is based on commercially available inductance-capacitance-resistance meters and pulse generators was tested for GaN films and AlGaN/GaN high electron mobility transistor structures with various series resistances. It is demonstrated that the measured spectra at high and low frequency follow the well documented frequency dependences of the stationary capacitance and magnitude of the capacitance transient. Measurements at low frequency allow for accurate determination of the concentration of the traps and, in many cases, detect traps that cannot be observed in the high frequency measurements. This is particularly valuable in materials like GaN where series resistance effects can be significant.

Original languageEnglish
Article number061203
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume33
Issue number6
DOIs
Publication statusPublished - 2015 Nov 1
Externally publishedYes

Fingerprint

Deep level transient spectroscopy
Nitrides
nitrides
Capacitance
capacitance
frequency measurement
traps
spectroscopy
low frequencies
Pulse generators
pulse generators
High electron mobility transistors
high electron mobility transistors
inductance
Inductance
generators

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Deep level transient spectroscopy in III-Nitrides : Decreasing the effects of series resistance. / Polyakov, Alexander Y.; Smirnov, Nikolai B.; Lee, In-Hwan; Pearton, Stephen J.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 33, No. 6, 061203, 01.11.2015.

Research output: Contribution to journalArticle

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