Deep level transient spectroscopy study of electron-irradiated CulnSe2 thin films

Hiroshi Okada, Naoki Fujita, Haeseok Lee, Akihiro Wakahara, Akira Yoshida, Takeshi Ohshima, Hisayoshi Itoh

Research output: Contribution to journalLetter

1 Citation (Scopus)

Abstract

Irradiation of high-energy (2-MeV and 3-MeV) electrons on single-crystalline n-CuInSe2 films has been investigated. From Hall-effect measurements of the film, the carrier density and mobility were decreased by increasing the electron fluence above 1 × 1017 cm-2. In both as-grown and electron-irradiated CuInSe2 films, the deep level transient spectroscopy (DLTS) peak, indicating electron trap, was found at around 180 K. However, Arrhenius plots of the observed DLTS peaks in as-grown and electron-irradiated films showed different behavior, suggesting the presence of electron traps introduced by high-energy electron irradiation.

Original languageEnglish
JournalJournal of Electronic Materials
Volume32
Issue number9
Publication statusPublished - 2003 Sep 1
Externally publishedYes

Fingerprint

Deep level transient spectroscopy
Thin films
Electron traps
Electrons
thin films
spectroscopy
electrons
Arrhenius plots
Electron irradiation
Carrier mobility
Hall effect
traps
Carrier concentration
Irradiation
electron irradiation
Crystalline materials
carrier mobility
high energy electrons
fluence
plots

Keywords

  • CuInSe
  • Deep level transient spectroscopy (DLTS)
  • Electron irradiation
  • Hall-effect measurement

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Okada, H., Fujita, N., Lee, H., Wakahara, A., Yoshida, A., Ohshima, T., & Itoh, H. (2003). Deep level transient spectroscopy study of electron-irradiated CulnSe2 thin films. Journal of Electronic Materials, 32(9).

Deep level transient spectroscopy study of electron-irradiated CulnSe2 thin films. / Okada, Hiroshi; Fujita, Naoki; Lee, Haeseok; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi; Itoh, Hisayoshi.

In: Journal of Electronic Materials, Vol. 32, No. 9, 01.09.2003.

Research output: Contribution to journalLetter

Okada, H, Fujita, N, Lee, H, Wakahara, A, Yoshida, A, Ohshima, T & Itoh, H 2003, 'Deep level transient spectroscopy study of electron-irradiated CulnSe2 thin films', Journal of Electronic Materials, vol. 32, no. 9.
Okada H, Fujita N, Lee H, Wakahara A, Yoshida A, Ohshima T et al. Deep level transient spectroscopy study of electron-irradiated CulnSe2 thin films. Journal of Electronic Materials. 2003 Sep 1;32(9).
Okada, Hiroshi ; Fujita, Naoki ; Lee, Haeseok ; Wakahara, Akihiro ; Yoshida, Akira ; Ohshima, Takeshi ; Itoh, Hisayoshi. / Deep level transient spectroscopy study of electron-irradiated CulnSe2 thin films. In: Journal of Electronic Materials. 2003 ; Vol. 32, No. 9.
@article{508fcf75be3c4cfe86201be29ec43a7b,
title = "Deep level transient spectroscopy study of electron-irradiated CulnSe2 thin films",
abstract = "Irradiation of high-energy (2-MeV and 3-MeV) electrons on single-crystalline n-CuInSe2 films has been investigated. From Hall-effect measurements of the film, the carrier density and mobility were decreased by increasing the electron fluence above 1 × 1017 cm-2. In both as-grown and electron-irradiated CuInSe2 films, the deep level transient spectroscopy (DLTS) peak, indicating electron trap, was found at around 180 K. However, Arrhenius plots of the observed DLTS peaks in as-grown and electron-irradiated films showed different behavior, suggesting the presence of electron traps introduced by high-energy electron irradiation.",
keywords = "CuInSe, Deep level transient spectroscopy (DLTS), Electron irradiation, Hall-effect measurement",
author = "Hiroshi Okada and Naoki Fujita and Haeseok Lee and Akihiro Wakahara and Akira Yoshida and Takeshi Ohshima and Hisayoshi Itoh",
year = "2003",
month = "9",
day = "1",
language = "English",
volume = "32",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "9",

}

TY - JOUR

T1 - Deep level transient spectroscopy study of electron-irradiated CulnSe2 thin films

AU - Okada, Hiroshi

AU - Fujita, Naoki

AU - Lee, Haeseok

AU - Wakahara, Akihiro

AU - Yoshida, Akira

AU - Ohshima, Takeshi

AU - Itoh, Hisayoshi

PY - 2003/9/1

Y1 - 2003/9/1

N2 - Irradiation of high-energy (2-MeV and 3-MeV) electrons on single-crystalline n-CuInSe2 films has been investigated. From Hall-effect measurements of the film, the carrier density and mobility were decreased by increasing the electron fluence above 1 × 1017 cm-2. In both as-grown and electron-irradiated CuInSe2 films, the deep level transient spectroscopy (DLTS) peak, indicating electron trap, was found at around 180 K. However, Arrhenius plots of the observed DLTS peaks in as-grown and electron-irradiated films showed different behavior, suggesting the presence of electron traps introduced by high-energy electron irradiation.

AB - Irradiation of high-energy (2-MeV and 3-MeV) electrons on single-crystalline n-CuInSe2 films has been investigated. From Hall-effect measurements of the film, the carrier density and mobility were decreased by increasing the electron fluence above 1 × 1017 cm-2. In both as-grown and electron-irradiated CuInSe2 films, the deep level transient spectroscopy (DLTS) peak, indicating electron trap, was found at around 180 K. However, Arrhenius plots of the observed DLTS peaks in as-grown and electron-irradiated films showed different behavior, suggesting the presence of electron traps introduced by high-energy electron irradiation.

KW - CuInSe

KW - Deep level transient spectroscopy (DLTS)

KW - Electron irradiation

KW - Hall-effect measurement

UR - http://www.scopus.com/inward/record.url?scp=0141675999&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141675999&partnerID=8YFLogxK

M3 - Letter

AN - SCOPUS:0141675999

VL - 32

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 9

ER -