Abstract
Irradiation of high-energy (2-MeV and 3-MeV) electrons on single-crystalline n-CuInSe2 films has been investigated. From Hall-effect measurements of the film, the carrier density and mobility were decreased by increasing the electron fluence above 1 × 1017 cm-2. In both as-grown and electron-irradiated CuInSe2 films, the deep level transient spectroscopy (DLTS) peak, indicating electron trap, was found at around 180 K. However, Arrhenius plots of the observed DLTS peaks in as-grown and electron-irradiated films showed different behavior, suggesting the presence of electron traps introduced by high-energy electron irradiation.
| Original language | English |
|---|---|
| Journal | Journal of Electronic Materials |
| Volume | 32 |
| Issue number | 9 |
| Publication status | Published - 2003 Sep 1 |
| Externally published | Yes |
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Keywords
- CuInSe
- Deep level transient spectroscopy (DLTS)
- Electron irradiation
- Hall-effect measurement
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Deep level transient spectroscopy study of electron-irradiated CulnSe2 thin films. / Okada, Hiroshi; Fujita, Naoki; Lee, Haeseok; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi; Itoh, Hisayoshi.
In: Journal of Electronic Materials, Vol. 32, No. 9, 01.09.2003.Research output: Contribution to journal › Letter
}
TY - JOUR
T1 - Deep level transient spectroscopy study of electron-irradiated CulnSe2 thin films
AU - Okada, Hiroshi
AU - Fujita, Naoki
AU - Lee, Haeseok
AU - Wakahara, Akihiro
AU - Yoshida, Akira
AU - Ohshima, Takeshi
AU - Itoh, Hisayoshi
PY - 2003/9/1
Y1 - 2003/9/1
N2 - Irradiation of high-energy (2-MeV and 3-MeV) electrons on single-crystalline n-CuInSe2 films has been investigated. From Hall-effect measurements of the film, the carrier density and mobility were decreased by increasing the electron fluence above 1 × 1017 cm-2. In both as-grown and electron-irradiated CuInSe2 films, the deep level transient spectroscopy (DLTS) peak, indicating electron trap, was found at around 180 K. However, Arrhenius plots of the observed DLTS peaks in as-grown and electron-irradiated films showed different behavior, suggesting the presence of electron traps introduced by high-energy electron irradiation.
AB - Irradiation of high-energy (2-MeV and 3-MeV) electrons on single-crystalline n-CuInSe2 films has been investigated. From Hall-effect measurements of the film, the carrier density and mobility were decreased by increasing the electron fluence above 1 × 1017 cm-2. In both as-grown and electron-irradiated CuInSe2 films, the deep level transient spectroscopy (DLTS) peak, indicating electron trap, was found at around 180 K. However, Arrhenius plots of the observed DLTS peaks in as-grown and electron-irradiated films showed different behavior, suggesting the presence of electron traps introduced by high-energy electron irradiation.
KW - CuInSe
KW - Deep level transient spectroscopy (DLTS)
KW - Electron irradiation
KW - Hall-effect measurement
UR - http://www.scopus.com/inward/record.url?scp=0141675999&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0141675999&partnerID=8YFLogxK
M3 - Letter
AN - SCOPUS:0141675999
VL - 32
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 9
ER -