Deep level transient spectroscopy study of electron-irradiated CulnSe2 thin films

Hiroshi Okada; Naoki Fujita; Hae Seok Lee; Akihiro Wakahara; Akira Yoshida; Takeshi Ohshima; Hisayoshi Itoh

doi:10.1007/s11664-003-0234-8

Deep level transient spectroscopy study of electron-irradiated CulnSe₂ thin films

Hiroshi Okada, Naoki Fujita, Hae Seok Lee, Akihiro Wakahara, Akira Yoshida, Takeshi Ohshima, Hisayoshi Itoh

Research output: Contribution to journal › Letter › peer-review

1 Citation (Scopus)

Abstract

Irradiation of high-energy (2-MeV and 3-MeV) electrons on single-crystalline n-CuInSe₂ films has been investigated. From Hall-effect measurements of the film, the carrier density and mobility were decreased by increasing the electron fluence above 1 × 10¹⁷ cm^-2. In both as-grown and electron-irradiated CuInSe₂ films, the deep level transient spectroscopy (DLTS) peak, indicating electron trap, was found at around 180 K. However, Arrhenius plots of the observed DLTS peaks in as-grown and electron-irradiated films showed different behavior, suggesting the presence of electron traps introduced by high-energy electron irradiation.

Original language	English
Pages (from-to)	L5-L8
Journal	Journal of Electronic Materials
Volume	32
Issue number	9
DOIs	https://doi.org/10.1007/s11664-003-0234-8
Publication status	Published - 2003 Sep
Externally published	Yes

Keywords

CuInSe
Deep level transient spectroscopy (DLTS)
Electron irradiation
Hall-effect measurement

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-003-0234-8

Cite this

@article{508fcf75be3c4cfe86201be29ec43a7b,

title = "Deep level transient spectroscopy study of electron-irradiated CulnSe2 thin films",

abstract = "Irradiation of high-energy (2-MeV and 3-MeV) electrons on single-crystalline n-CuInSe2 films has been investigated. From Hall-effect measurements of the film, the carrier density and mobility were decreased by increasing the electron fluence above 1 × 1017 cm-2. In both as-grown and electron-irradiated CuInSe2 films, the deep level transient spectroscopy (DLTS) peak, indicating electron trap, was found at around 180 K. However, Arrhenius plots of the observed DLTS peaks in as-grown and electron-irradiated films showed different behavior, suggesting the presence of electron traps introduced by high-energy electron irradiation.",

keywords = "CuInSe, Deep level transient spectroscopy (DLTS), Electron irradiation, Hall-effect measurement",

author = "Hiroshi Okada and Naoki Fujita and Lee, {Hae Seok} and Akihiro Wakahara and Akira Yoshida and Takeshi Ohshima and Hisayoshi Itoh",

year = "2003",

month = sep,

doi = "10.1007/s11664-003-0234-8",

language = "English",

volume = "32",

pages = "L5--L8",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "9",

}

TY - JOUR

T1 - Deep level transient spectroscopy study of electron-irradiated CulnSe2 thin films

AU - Okada, Hiroshi

AU - Fujita, Naoki

AU - Lee, Hae Seok

AU - Wakahara, Akihiro

AU - Yoshida, Akira

AU - Ohshima, Takeshi

AU - Itoh, Hisayoshi

PY - 2003/9

Y1 - 2003/9

N2 - Irradiation of high-energy (2-MeV and 3-MeV) electrons on single-crystalline n-CuInSe2 films has been investigated. From Hall-effect measurements of the film, the carrier density and mobility were decreased by increasing the electron fluence above 1 × 1017 cm-2. In both as-grown and electron-irradiated CuInSe2 films, the deep level transient spectroscopy (DLTS) peak, indicating electron trap, was found at around 180 K. However, Arrhenius plots of the observed DLTS peaks in as-grown and electron-irradiated films showed different behavior, suggesting the presence of electron traps introduced by high-energy electron irradiation.

AB - Irradiation of high-energy (2-MeV and 3-MeV) electrons on single-crystalline n-CuInSe2 films has been investigated. From Hall-effect measurements of the film, the carrier density and mobility were decreased by increasing the electron fluence above 1 × 1017 cm-2. In both as-grown and electron-irradiated CuInSe2 films, the deep level transient spectroscopy (DLTS) peak, indicating electron trap, was found at around 180 K. However, Arrhenius plots of the observed DLTS peaks in as-grown and electron-irradiated films showed different behavior, suggesting the presence of electron traps introduced by high-energy electron irradiation.

KW - CuInSe

KW - Deep level transient spectroscopy (DLTS)

KW - Electron irradiation

KW - Hall-effect measurement

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U2 - 10.1007/s11664-003-0234-8

DO - 10.1007/s11664-003-0234-8

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AN - SCOPUS:0141675999

VL - 32

SP - L5-L8

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 9

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