Abstract
Irradiation of high-energy (2-MeV and 3-MeV) electrons on single-crystalline n-CuInSe2 films has been investigated. From Hall-effect measurements of the film, the carrier density and mobility were decreased by increasing the electron fluence above 1 × 1017 cm-2. In both as-grown and electron-irradiated CuInSe2 films, the deep level transient spectroscopy (DLTS) peak, indicating electron trap, was found at around 180 K. However, Arrhenius plots of the observed DLTS peaks in as-grown and electron-irradiated films showed different behavior, suggesting the presence of electron traps introduced by high-energy electron irradiation.
| Original language | English |
|---|---|
| Pages (from-to) | L5-L8 |
| Journal | Journal of Electronic Materials |
| Volume | 32 |
| Issue number | 9 |
| Publication status | Published - 2003 Sep 1 |
Keywords
- CuInSe
- Deep level transient spectroscopy (DLTS)
- Electron irradiation
- Hall-effect measurement
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Okada, H., Fujita, N., Lee, H. S., Wakahara, A., Yoshida, A., Ohshima, T., & Itoh, H. (2003). Deep level transient spectroscopy study of electron-irradiated CulnSe2 thin films. Journal of Electronic Materials, 32(9), L5-L8.