Deep level transient spectroscopy study of electron-irradiated CulnSe2 thin films

Hiroshi Okada, Naoki Fujita, Hae Seok Lee, Akihiro Wakahara, Akira Yoshida, Takeshi Ohshima, Hisayoshi Itoh

Research output: Contribution to journalLetter

1 Citation (Scopus)

Abstract

Irradiation of high-energy (2-MeV and 3-MeV) electrons on single-crystalline n-CuInSe2 films has been investigated. From Hall-effect measurements of the film, the carrier density and mobility were decreased by increasing the electron fluence above 1 × 1017 cm-2. In both as-grown and electron-irradiated CuInSe2 films, the deep level transient spectroscopy (DLTS) peak, indicating electron trap, was found at around 180 K. However, Arrhenius plots of the observed DLTS peaks in as-grown and electron-irradiated films showed different behavior, suggesting the presence of electron traps introduced by high-energy electron irradiation.

Original languageEnglish
Pages (from-to)L5-L8
JournalJournal of Electronic Materials
Volume32
Issue number9
Publication statusPublished - 2003 Sep 1

Keywords

  • CuInSe
  • Deep level transient spectroscopy (DLTS)
  • Electron irradiation
  • Hall-effect measurement

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Okada, H., Fujita, N., Lee, H. S., Wakahara, A., Yoshida, A., Ohshima, T., & Itoh, H. (2003). Deep level transient spectroscopy study of electron-irradiated CulnSe2 thin films. Journal of Electronic Materials, 32(9), L5-L8.