Deep trap analysis in green light emitting diodes: Problems and solutions

A. Y. Polyakov, N. M. Shmidt, N. B. Smirnov, I. V. Shchemerov, E. I. Shabunina, N. A. Tal'nishnih, In-Hwan Lee, L. A. Alexanyan, S. A. Tarelkin, S. J. Pearton

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Some green light emitting diodes (LEDs) based on GaN/InGaN multiquantum-well (MQW) structures exhibit strong frequency and temperature dependence of capacitance and prominent changes in capacitance-voltage profiles with temperature that make it difficult to obtain reliable deep level transient spectroscopy (DLTS) measurements. DLTS performed at low probing signal frequency and with constant capacitance between the measurements by controlling applied bias mitigates these issues. This allows measurement of deep electron and hole traps in specific quantum wells (QWs) in the MQW structure. The dominant electron and hole traps detected have levels near E c- (0.45-0.5) eV and E v+ (0.6-0.63) eV. Their density increases significantly after aging for a long period (2120 h) at high driving current and elevated temperature. The reason for the observed anomalies in DLTS spectra of these green LEDs is the high density of states in the QWs with activation energies near 0.08, 0.12-0.14, and 0.3 eV, detected in admittance spectra, and, for the 0.08 eV and 0.3 eV, these states are likely related to defects.

Original languageEnglish
Article number215701
JournalJournal of Applied Physics
Volume125
Issue number21
DOIs
Publication statusPublished - 2019 Jun 7

Fingerprint

light emitting diodes
traps
capacitance
quantum wells
spectroscopy
electrical impedance
high current
electrons
anomalies
activation energy
temperature dependence
temperature
defects
electric potential
profiles

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Polyakov, A. Y., Shmidt, N. M., Smirnov, N. B., Shchemerov, I. V., Shabunina, E. I., Tal'nishnih, N. A., ... Pearton, S. J. (2019). Deep trap analysis in green light emitting diodes: Problems and solutions. Journal of Applied Physics, 125(21), [215701]. https://doi.org/10.1063/1.5093723

Deep trap analysis in green light emitting diodes : Problems and solutions. / Polyakov, A. Y.; Shmidt, N. M.; Smirnov, N. B.; Shchemerov, I. V.; Shabunina, E. I.; Tal'nishnih, N. A.; Lee, In-Hwan; Alexanyan, L. A.; Tarelkin, S. A.; Pearton, S. J.

In: Journal of Applied Physics, Vol. 125, No. 21, 215701, 07.06.2019.

Research output: Contribution to journalArticle

Polyakov, AY, Shmidt, NM, Smirnov, NB, Shchemerov, IV, Shabunina, EI, Tal'nishnih, NA, Lee, I-H, Alexanyan, LA, Tarelkin, SA & Pearton, SJ 2019, 'Deep trap analysis in green light emitting diodes: Problems and solutions', Journal of Applied Physics, vol. 125, no. 21, 215701. https://doi.org/10.1063/1.5093723
Polyakov AY, Shmidt NM, Smirnov NB, Shchemerov IV, Shabunina EI, Tal'nishnih NA et al. Deep trap analysis in green light emitting diodes: Problems and solutions. Journal of Applied Physics. 2019 Jun 7;125(21). 215701. https://doi.org/10.1063/1.5093723
Polyakov, A. Y. ; Shmidt, N. M. ; Smirnov, N. B. ; Shchemerov, I. V. ; Shabunina, E. I. ; Tal'nishnih, N. A. ; Lee, In-Hwan ; Alexanyan, L. A. ; Tarelkin, S. A. ; Pearton, S. J. / Deep trap analysis in green light emitting diodes : Problems and solutions. In: Journal of Applied Physics. 2019 ; Vol. 125, No. 21.
@article{eec8d5351eb9492896a9e5b2189a790c,
title = "Deep trap analysis in green light emitting diodes: Problems and solutions",
abstract = "Some green light emitting diodes (LEDs) based on GaN/InGaN multiquantum-well (MQW) structures exhibit strong frequency and temperature dependence of capacitance and prominent changes in capacitance-voltage profiles with temperature that make it difficult to obtain reliable deep level transient spectroscopy (DLTS) measurements. DLTS performed at low probing signal frequency and with constant capacitance between the measurements by controlling applied bias mitigates these issues. This allows measurement of deep electron and hole traps in specific quantum wells (QWs) in the MQW structure. The dominant electron and hole traps detected have levels near E c- (0.45-0.5) eV and E v+ (0.6-0.63) eV. Their density increases significantly after aging for a long period (2120 h) at high driving current and elevated temperature. The reason for the observed anomalies in DLTS spectra of these green LEDs is the high density of states in the QWs with activation energies near 0.08, 0.12-0.14, and 0.3 eV, detected in admittance spectra, and, for the 0.08 eV and 0.3 eV, these states are likely related to defects.",
author = "Polyakov, {A. Y.} and Shmidt, {N. M.} and Smirnov, {N. B.} and Shchemerov, {I. V.} and Shabunina, {E. I.} and Tal'nishnih, {N. A.} and In-Hwan Lee and Alexanyan, {L. A.} and Tarelkin, {S. A.} and Pearton, {S. J.}",
year = "2019",
month = "6",
day = "7",
doi = "10.1063/1.5093723",
language = "English",
volume = "125",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "21",

}

TY - JOUR

T1 - Deep trap analysis in green light emitting diodes

T2 - Problems and solutions

AU - Polyakov, A. Y.

AU - Shmidt, N. M.

AU - Smirnov, N. B.

AU - Shchemerov, I. V.

AU - Shabunina, E. I.

AU - Tal'nishnih, N. A.

AU - Lee, In-Hwan

AU - Alexanyan, L. A.

AU - Tarelkin, S. A.

AU - Pearton, S. J.

PY - 2019/6/7

Y1 - 2019/6/7

N2 - Some green light emitting diodes (LEDs) based on GaN/InGaN multiquantum-well (MQW) structures exhibit strong frequency and temperature dependence of capacitance and prominent changes in capacitance-voltage profiles with temperature that make it difficult to obtain reliable deep level transient spectroscopy (DLTS) measurements. DLTS performed at low probing signal frequency and with constant capacitance between the measurements by controlling applied bias mitigates these issues. This allows measurement of deep electron and hole traps in specific quantum wells (QWs) in the MQW structure. The dominant electron and hole traps detected have levels near E c- (0.45-0.5) eV and E v+ (0.6-0.63) eV. Their density increases significantly after aging for a long period (2120 h) at high driving current and elevated temperature. The reason for the observed anomalies in DLTS spectra of these green LEDs is the high density of states in the QWs with activation energies near 0.08, 0.12-0.14, and 0.3 eV, detected in admittance spectra, and, for the 0.08 eV and 0.3 eV, these states are likely related to defects.

AB - Some green light emitting diodes (LEDs) based on GaN/InGaN multiquantum-well (MQW) structures exhibit strong frequency and temperature dependence of capacitance and prominent changes in capacitance-voltage profiles with temperature that make it difficult to obtain reliable deep level transient spectroscopy (DLTS) measurements. DLTS performed at low probing signal frequency and with constant capacitance between the measurements by controlling applied bias mitigates these issues. This allows measurement of deep electron and hole traps in specific quantum wells (QWs) in the MQW structure. The dominant electron and hole traps detected have levels near E c- (0.45-0.5) eV and E v+ (0.6-0.63) eV. Their density increases significantly after aging for a long period (2120 h) at high driving current and elevated temperature. The reason for the observed anomalies in DLTS spectra of these green LEDs is the high density of states in the QWs with activation energies near 0.08, 0.12-0.14, and 0.3 eV, detected in admittance spectra, and, for the 0.08 eV and 0.3 eV, these states are likely related to defects.

UR - http://www.scopus.com/inward/record.url?scp=85066849222&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85066849222&partnerID=8YFLogxK

U2 - 10.1063/1.5093723

DO - 10.1063/1.5093723

M3 - Article

AN - SCOPUS:85066849222

VL - 125

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 21

M1 - 215701

ER -