Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures

A. Y. Polyakov; Lee Woon Jang; Dong Seob Jo; In Hwan Lee; N. B. Smirnov; A. V. Govorkov; E. A. Kozhukhova; Kwang Hyeon Baik; Sung Min Hwang

doi:10.1063/1.3680877

Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures

A. Y. Polyakov, Lee Woon Jang, Dong Seob Jo, In Hwan Lee, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, Kwang Hyeon Baik, Sung Min Hwang

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Nonpolar (11-20) a-GaN/InGaN quantum well (QW) structures were grown by metalorganic chemical vapor deposition on r-plane (1-102) sapphire substrate using a two-stage growth procedure. Our studies demonstrate that, in contrast to polar QWs, these structures show the presence of deep electron traps with activation energy of 0.41 eV in admittance spectra and 1 eV electron traps in capacitance transient spectra. These traps are suspected to be nonradiative recombination centers, decreasing the nonpolar QW photoluminescence (PL) efficiency in our structures compared to polar structures. The PL efficiency of nonpolar QWs is shown to be greatly enhanced by coupling to localized surface plasmons formed by Ag nanoparticles.

Original language	English
Article number	033103
Journal	Journal of Applied Physics
Volume	111
Issue number	3
DOIs	https://doi.org/10.1063/1.3680877
Publication status	Published - 2012 Feb 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.3680877

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@article{3462b267a62c4a958270224dce097368,

title = "Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures",

abstract = "Nonpolar (11-20) a-GaN/InGaN quantum well (QW) structures were grown by metalorganic chemical vapor deposition on r-plane (1-102) sapphire substrate using a two-stage growth procedure. Our studies demonstrate that, in contrast to polar QWs, these structures show the presence of deep electron traps with activation energy of 0.41 eV in admittance spectra and 1 eV electron traps in capacitance transient spectra. These traps are suspected to be nonradiative recombination centers, decreasing the nonpolar QW photoluminescence (PL) efficiency in our structures compared to polar structures. The PL efficiency of nonpolar QWs is shown to be greatly enhanced by coupling to localized surface plasmons formed by Ag nanoparticles.",

author = "Polyakov, {A. Y.} and Jang, {Lee Woon} and Jo, {Dong Seob} and Lee, {In Hwan} and Smirnov, {N. B.} and Govorkov, {A. V.} and Kozhukhova, {E. A.} and {Hyeon Baik}, Kwang and Hwang, {Sung Min}",

note = "Funding Information: The work at IRM was supported in part by the Russian Foundation for Basic Research RFBR grants #10-02-00566-a and 11-02-00718-a. The work at Chonbuk National University was supported by the National Research Foundation of Korea (NRF) funded by the Korea government (MEST) (2010-0019626, 2010-0026614). A.Y.P. gratefully acknowledges support from the Brain Pool Program of Korean Government during his stay at Chonbuk National University.",

year = "2012",

month = feb,

day = "1",

doi = "10.1063/1.3680877",

language = "English",

volume = "111",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures

AU - Polyakov, A. Y.

AU - Jang, Lee Woon

AU - Jo, Dong Seob

AU - Lee, In Hwan

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Hyeon Baik, Kwang

AU - Hwang, Sung Min

N1 - Funding Information: The work at IRM was supported in part by the Russian Foundation for Basic Research RFBR grants #10-02-00566-a and 11-02-00718-a. The work at Chonbuk National University was supported by the National Research Foundation of Korea (NRF) funded by the Korea government (MEST) (2010-0019626, 2010-0026614). A.Y.P. gratefully acknowledges support from the Brain Pool Program of Korean Government during his stay at Chonbuk National University.

PY - 2012/2/1

Y1 - 2012/2/1

N2 - Nonpolar (11-20) a-GaN/InGaN quantum well (QW) structures were grown by metalorganic chemical vapor deposition on r-plane (1-102) sapphire substrate using a two-stage growth procedure. Our studies demonstrate that, in contrast to polar QWs, these structures show the presence of deep electron traps with activation energy of 0.41 eV in admittance spectra and 1 eV electron traps in capacitance transient spectra. These traps are suspected to be nonradiative recombination centers, decreasing the nonpolar QW photoluminescence (PL) efficiency in our structures compared to polar structures. The PL efficiency of nonpolar QWs is shown to be greatly enhanced by coupling to localized surface plasmons formed by Ag nanoparticles.

AB - Nonpolar (11-20) a-GaN/InGaN quantum well (QW) structures were grown by metalorganic chemical vapor deposition on r-plane (1-102) sapphire substrate using a two-stage growth procedure. Our studies demonstrate that, in contrast to polar QWs, these structures show the presence of deep electron traps with activation energy of 0.41 eV in admittance spectra and 1 eV electron traps in capacitance transient spectra. These traps are suspected to be nonradiative recombination centers, decreasing the nonpolar QW photoluminescence (PL) efficiency in our structures compared to polar structures. The PL efficiency of nonpolar QWs is shown to be greatly enhanced by coupling to localized surface plasmons formed by Ag nanoparticles.

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U2 - 10.1063/1.3680877

DO - 10.1063/1.3680877

M3 - Article

AN - SCOPUS:84857396093

SN - 0021-8979

VL - 111

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

M1 - 033103

ER -

Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures

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