Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures

A. Y. Polyakov, Lee Woon Jang, Dong Seob Jo, In Hwan Lee, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, Kwang Hyeon Baik, Sung Min Hwang

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3 Citations (Scopus)

Abstract

Nonpolar (11-20) a-GaN/InGaN quantum well (QW) structures were grown by metalorganic chemical vapor deposition on r-plane (1-102) sapphire substrate using a two-stage growth procedure. Our studies demonstrate that, in contrast to polar QWs, these structures show the presence of deep electron traps with activation energy of 0.41 eV in admittance spectra and 1 eV electron traps in capacitance transient spectra. These traps are suspected to be nonradiative recombination centers, decreasing the nonpolar QW photoluminescence (PL) efficiency in our structures compared to polar structures. The PL efficiency of nonpolar QWs is shown to be greatly enhanced by coupling to localized surface plasmons formed by Ag nanoparticles.

Original languageEnglish
Article number033103
JournalJournal of Applied Physics
Volume111
Issue number3
DOIs
Publication statusPublished - 2012 Feb 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Polyakov, A. Y., Jang, L. W., Jo, D. S., Lee, I. H., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Hyeon Baik, K., & Hwang, S. M. (2012). Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures. Journal of Applied Physics, 111(3), [033103]. https://doi.org/10.1063/1.3680877