Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN

A. Y. Polyakov, N. B. Smirnov, E. B. Yakimov, S. A. Tarelkin, A. V. Turutin, I. V. Shemerov, S. J. Pearton, Kang Bin Bae, In-Hwan Lee

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Deep traps spectra measurements were performed for a group of n-GaN films grown by metalorganic chemical vapor deposition (MOCVD) on sapphire using standard MOCVD and two versions of lateral overgrowth techniques, the epitaxial lateral overgrowth (ELOG) and pendeo epitaxy (PE). Deep levels transient spectroscopy with electrical (DLTS) or optical (ODLTS) injection showed that in all cases the dominant electron traps were the well known E c -0.56 eV centers. DLTS spectra taken with constant illumination indicate that not only has this trap a high density and electron capture cross section, but that it also has a high hole capture cross section and thus can be an efficient recombination center. Comparison with diffusion length measurements supports this conclusion. Among the hole traps the most prominent centers are the traps near E v +0.9 eV. However, direct estimate of the electron capture cross section by these traps give very low values close to 10 −22  cm 2 thus excluding the E v +0.9 eV traps from the list of potential lifetime killers, despite the high density of these centers. Annealing at 800 °C of one of the PE samples led to an increase of the concentration of the E v +0.9 eV traps, the increase of the centers with optical ionization energy 1.3 eV density (observed in photocapacitance), and also to increased intensity of yellow luminescence band.

Original languageEnglish
Pages (from-to)1044-1052
Number of pages9
JournalJournal of Alloys and Compounds
Volume686
DOIs
Publication statusPublished - 2016 Jan 1
Externally publishedYes

Fingerprint

Deep level transient spectroscopy
Metallorganic chemical vapor deposition
Epitaxial growth
Luminescence
Hole traps
Electron traps
Defects
Electrons
Ionization potential
Aluminum Oxide
Sapphire
Lighting
Annealing

Keywords

  • Deep traps
  • Dislocations
  • GaN
  • Non-radiative lifetime
  • Yellow luminescence

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Polyakov, A. Y., Smirnov, N. B., Yakimov, E. B., Tarelkin, S. A., Turutin, A. V., Shemerov, I. V., ... Lee, I-H. (2016). Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN. Journal of Alloys and Compounds, 686, 1044-1052. https://doi.org/10.1016/j.jallcom.2016.06.297

Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN. / Polyakov, A. Y.; Smirnov, N. B.; Yakimov, E. B.; Tarelkin, S. A.; Turutin, A. V.; Shemerov, I. V.; Pearton, S. J.; Bae, Kang Bin; Lee, In-Hwan.

In: Journal of Alloys and Compounds, Vol. 686, 01.01.2016, p. 1044-1052.

Research output: Contribution to journalArticle

Polyakov, AY, Smirnov, NB, Yakimov, EB, Tarelkin, SA, Turutin, AV, Shemerov, IV, Pearton, SJ, Bae, KB & Lee, I-H 2016, 'Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN', Journal of Alloys and Compounds, vol. 686, pp. 1044-1052. https://doi.org/10.1016/j.jallcom.2016.06.297
Polyakov, A. Y. ; Smirnov, N. B. ; Yakimov, E. B. ; Tarelkin, S. A. ; Turutin, A. V. ; Shemerov, I. V. ; Pearton, S. J. ; Bae, Kang Bin ; Lee, In-Hwan. / Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN. In: Journal of Alloys and Compounds. 2016 ; Vol. 686. pp. 1044-1052.
@article{9e8838ee9fbb446bb4a856944dbfea9d,
title = "Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN",
abstract = "Deep traps spectra measurements were performed for a group of n-GaN films grown by metalorganic chemical vapor deposition (MOCVD) on sapphire using standard MOCVD and two versions of lateral overgrowth techniques, the epitaxial lateral overgrowth (ELOG) and pendeo epitaxy (PE). Deep levels transient spectroscopy with electrical (DLTS) or optical (ODLTS) injection showed that in all cases the dominant electron traps were the well known E c -0.56 eV centers. DLTS spectra taken with constant illumination indicate that not only has this trap a high density and electron capture cross section, but that it also has a high hole capture cross section and thus can be an efficient recombination center. Comparison with diffusion length measurements supports this conclusion. Among the hole traps the most prominent centers are the traps near E v +0.9 eV. However, direct estimate of the electron capture cross section by these traps give very low values close to 10 −22  cm 2 thus excluding the E v +0.9 eV traps from the list of potential lifetime killers, despite the high density of these centers. Annealing at 800 °C of one of the PE samples led to an increase of the concentration of the E v +0.9 eV traps, the increase of the centers with optical ionization energy 1.3 eV density (observed in photocapacitance), and also to increased intensity of yellow luminescence band.",
keywords = "Deep traps, Dislocations, GaN, Non-radiative lifetime, Yellow luminescence",
author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Yakimov, {E. B.} and Tarelkin, {S. A.} and Turutin, {A. V.} and Shemerov, {I. V.} and Pearton, {S. J.} and Bae, {Kang Bin} and In-Hwan Lee",
year = "2016",
month = "1",
day = "1",
doi = "10.1016/j.jallcom.2016.06.297",
language = "English",
volume = "686",
pages = "1044--1052",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier BV",

}

TY - JOUR

T1 - Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Yakimov, E. B.

AU - Tarelkin, S. A.

AU - Turutin, A. V.

AU - Shemerov, I. V.

AU - Pearton, S. J.

AU - Bae, Kang Bin

AU - Lee, In-Hwan

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Deep traps spectra measurements were performed for a group of n-GaN films grown by metalorganic chemical vapor deposition (MOCVD) on sapphire using standard MOCVD and two versions of lateral overgrowth techniques, the epitaxial lateral overgrowth (ELOG) and pendeo epitaxy (PE). Deep levels transient spectroscopy with electrical (DLTS) or optical (ODLTS) injection showed that in all cases the dominant electron traps were the well known E c -0.56 eV centers. DLTS spectra taken with constant illumination indicate that not only has this trap a high density and electron capture cross section, but that it also has a high hole capture cross section and thus can be an efficient recombination center. Comparison with diffusion length measurements supports this conclusion. Among the hole traps the most prominent centers are the traps near E v +0.9 eV. However, direct estimate of the electron capture cross section by these traps give very low values close to 10 −22  cm 2 thus excluding the E v +0.9 eV traps from the list of potential lifetime killers, despite the high density of these centers. Annealing at 800 °C of one of the PE samples led to an increase of the concentration of the E v +0.9 eV traps, the increase of the centers with optical ionization energy 1.3 eV density (observed in photocapacitance), and also to increased intensity of yellow luminescence band.

AB - Deep traps spectra measurements were performed for a group of n-GaN films grown by metalorganic chemical vapor deposition (MOCVD) on sapphire using standard MOCVD and two versions of lateral overgrowth techniques, the epitaxial lateral overgrowth (ELOG) and pendeo epitaxy (PE). Deep levels transient spectroscopy with electrical (DLTS) or optical (ODLTS) injection showed that in all cases the dominant electron traps were the well known E c -0.56 eV centers. DLTS spectra taken with constant illumination indicate that not only has this trap a high density and electron capture cross section, but that it also has a high hole capture cross section and thus can be an efficient recombination center. Comparison with diffusion length measurements supports this conclusion. Among the hole traps the most prominent centers are the traps near E v +0.9 eV. However, direct estimate of the electron capture cross section by these traps give very low values close to 10 −22  cm 2 thus excluding the E v +0.9 eV traps from the list of potential lifetime killers, despite the high density of these centers. Annealing at 800 °C of one of the PE samples led to an increase of the concentration of the E v +0.9 eV traps, the increase of the centers with optical ionization energy 1.3 eV density (observed in photocapacitance), and also to increased intensity of yellow luminescence band.

KW - Deep traps

KW - Dislocations

KW - GaN

KW - Non-radiative lifetime

KW - Yellow luminescence

UR - http://www.scopus.com/inward/record.url?scp=84978300328&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84978300328&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2016.06.297

DO - 10.1016/j.jallcom.2016.06.297

M3 - Article

AN - SCOPUS:84978300328

VL - 686

SP - 1044

EP - 1052

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

ER -