Deep-ultraviolet AlGaN light-emitting diodes with variable quantum well and barrier widths

Su Jin Kim, Tae Geun Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In this study, a device scheme for improving the internal quantum efficiency (IQE) of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) is proposed and numerically investigated using SimuLED software. By step-increasing the thickness of the quantum wells and step-decreasing the thickness of quantum barriers in a multiple quantum well (MQW) structure, the IQE of a DUV-LED at 20 mA is increased by a factor of approximately 1.3 relative to the reference LED. These improvements are attributed to increased radiative recombination rates resulting from enhanced hole injection and uniform carrier distribution within the MQWs.

Original languageEnglish
Pages (from-to)656-660
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume211
Issue number3
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

ultraviolet radiation
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
Quantum efficiency
quantum efficiency
radiative recombination
injection
computer programs
aluminum gallium nitride
Ultraviolet Rays

Keywords

  • device simulations
  • light-emitting diodes
  • potential barriers
  • quantum efficiency
  • quantum wells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Deep-ultraviolet AlGaN light-emitting diodes with variable quantum well and barrier widths. / Kim, Su Jin; Kim, Tae Geun.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 211, No. 3, 01.01.2014, p. 656-660.

Research output: Contribution to journalArticle

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