Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications

Kookjin Lee; Hyunjin Ji; Yanghee Kim; Ben Kaczer; Hyebin Lee; Jae Pyoung Ahn; Junhee Choi; Alexander Grill; Luca Panarella; Quentin Smets; Devin Verreck; Simon Van Beek; Adrian Chasin; Dimitri Linten; Junhong Na; Jae Woo Lee; Ingrid De Wolf; Gyu Tae Kim

doi:10.1002/admi.202102488

Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications

Kookjin Lee, Hyunjin Ji, Yanghee Kim, Ben Kaczer, Hyebin Lee, Jae Pyoung Ahn, Junhee Choi, Alexander Grill, Luca Panarella, Quentin Smets, Devin Verreck, Simon Van Beek, Adrian Chasin, Dimitri Linten, Junhong Na, Jae Woo Lee, Ingrid De Wolf, Gyu Tae Kim

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this study, the radiation effects of electron beam (e-beam) on field-effect transistors (FETs) using transition-metal dichalcogenides (TMD) as a channel are carefully investigated. Electron-hole pairs (EHPs) in SiO₂ generated by e-beam irradiation induce additional traps, which change the surface potential of the TMD channel, resulting in strong negative shifts of transfer characteristics. These negative shifts, which remind one of n-doping effects, are highly affected not only by the condition of e-beam irradiation, but also by the gate bias condition during irradiating. As a result of the e-beam irradiation effect, band bending and contact resistance are affected, and the degree of formation of oxide traps and interface traps varies depending on the gate bias conditions. In the case of V_G > 0 V application during e-beam irradiation, the negative shifts in the transfer characteristics are fully recovered after ambient exposure. However, the interface traps increase significantly, resulting in variations of low-frequency (LF) noise and time-dependent current fluctuations.

Original language	English
Article number	2102488
Journal	Advanced Materials Interfaces
Volume	9
Issue number	9
DOIs	https://doi.org/10.1002/admi.202102488
Publication status	Published - 2022 Mar 22

Keywords

2D materials
defects
electron beam
electron-hole pairs
field-effect transistor
low-frequency noise

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering

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10.1002/admi.202102488

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Lee, K., Ji, H., Kim, Y., Kaczer, B., Lee, H., Ahn, J. P., Choi, J., Grill, A., Panarella, L., Smets, Q., Verreck, D., Van Beek, S., Chasin, A., Linten, D., Na, J., Lee, J. W., De Wolf, I., & Kim, G. T. (2022). Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications. Advanced Materials Interfaces, 9(9), [2102488]. https://doi.org/10.1002/admi.202102488

Lee, K, Ji, H, Kim, Y, Kaczer, B, Lee, H, Ahn, JP, Choi, J, Grill, A, Panarella, L, Smets, Q, Verreck, D, Van Beek, S, Chasin, A, Linten, D, Na, J, Lee, JW, De Wolf, I & Kim, GT 2022, 'Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications', Advanced Materials Interfaces, vol. 9, no. 9, 2102488. https://doi.org/10.1002/admi.202102488

@article{7394662f31964906a145e31bf4b011aa,

title = "Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications",

abstract = "In this study, the radiation effects of electron beam (e-beam) on field-effect transistors (FETs) using transition-metal dichalcogenides (TMD) as a channel are carefully investigated. Electron-hole pairs (EHPs) in SiO2 generated by e-beam irradiation induce additional traps, which change the surface potential of the TMD channel, resulting in strong negative shifts of transfer characteristics. These negative shifts, which remind one of n-doping effects, are highly affected not only by the condition of e-beam irradiation, but also by the gate bias condition during irradiating. As a result of the e-beam irradiation effect, band bending and contact resistance are affected, and the degree of formation of oxide traps and interface traps varies depending on the gate bias conditions. In the case of VG > 0 V application during e-beam irradiation, the negative shifts in the transfer characteristics are fully recovered after ambient exposure. However, the interface traps increase significantly, resulting in variations of low-frequency (LF) noise and time-dependent current fluctuations.",

keywords = "2D materials, defects, electron beam, electron-hole pairs, field-effect transistor, low-frequency noise",

author = "Kookjin Lee and Hyunjin Ji and Yanghee Kim and Ben Kaczer and Hyebin Lee and Ahn, {Jae Pyoung} and Junhee Choi and Alexander Grill and Luca Panarella and Quentin Smets and Devin Verreck and {Van Beek}, Simon and Adrian Chasin and Dimitri Linten and Junhong Na and Lee, {Jae Woo} and {De Wolf}, Ingrid and Kim, {Gyu Tae}",

note = "Funding Information: This research was supported by Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (2017M3A7B4049119, Gyu-Tae Kim). H.J. also wishes to acknowledge the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2019R1A2C1010742). Further, J.W.L. also wishes to acknowledge the National Research Foundation of Korea (NRF) grant funded by the KOREA government (MSIT) (2019R1F1A1060687). Publisher Copyright: {\textcopyright} 2022 Wiley-VCH GmbH",

year = "2022",

month = mar,

day = "22",

doi = "10.1002/admi.202102488",

language = "English",

volume = "9",

journal = "Advanced Materials Interfaces",

issn = "2196-7350",

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T1 - Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications

AU - Lee, Kookjin

AU - Ji, Hyunjin

AU - Kim, Yanghee

AU - Kaczer, Ben

AU - Lee, Hyebin

AU - Ahn, Jae Pyoung

AU - Choi, Junhee

AU - Grill, Alexander

AU - Panarella, Luca

AU - Smets, Quentin

AU - Verreck, Devin

AU - Van Beek, Simon

AU - Chasin, Adrian

AU - Linten, Dimitri

AU - Na, Junhong

AU - Lee, Jae Woo

AU - De Wolf, Ingrid

AU - Kim, Gyu Tae

N1 - Funding Information: This research was supported by Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (2017M3A7B4049119, Gyu-Tae Kim). H.J. also wishes to acknowledge the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2019R1A2C1010742). Further, J.W.L. also wishes to acknowledge the National Research Foundation of Korea (NRF) grant funded by the KOREA government (MSIT) (2019R1F1A1060687). Publisher Copyright: © 2022 Wiley-VCH GmbH

PY - 2022/3/22

Y1 - 2022/3/22

N2 - In this study, the radiation effects of electron beam (e-beam) on field-effect transistors (FETs) using transition-metal dichalcogenides (TMD) as a channel are carefully investigated. Electron-hole pairs (EHPs) in SiO2 generated by e-beam irradiation induce additional traps, which change the surface potential of the TMD channel, resulting in strong negative shifts of transfer characteristics. These negative shifts, which remind one of n-doping effects, are highly affected not only by the condition of e-beam irradiation, but also by the gate bias condition during irradiating. As a result of the e-beam irradiation effect, band bending and contact resistance are affected, and the degree of formation of oxide traps and interface traps varies depending on the gate bias conditions. In the case of VG > 0 V application during e-beam irradiation, the negative shifts in the transfer characteristics are fully recovered after ambient exposure. However, the interface traps increase significantly, resulting in variations of low-frequency (LF) noise and time-dependent current fluctuations.

AB - In this study, the radiation effects of electron beam (e-beam) on field-effect transistors (FETs) using transition-metal dichalcogenides (TMD) as a channel are carefully investigated. Electron-hole pairs (EHPs) in SiO2 generated by e-beam irradiation induce additional traps, which change the surface potential of the TMD channel, resulting in strong negative shifts of transfer characteristics. These negative shifts, which remind one of n-doping effects, are highly affected not only by the condition of e-beam irradiation, but also by the gate bias condition during irradiating. As a result of the e-beam irradiation effect, band bending and contact resistance are affected, and the degree of formation of oxide traps and interface traps varies depending on the gate bias conditions. In the case of VG > 0 V application during e-beam irradiation, the negative shifts in the transfer characteristics are fully recovered after ambient exposure. However, the interface traps increase significantly, resulting in variations of low-frequency (LF) noise and time-dependent current fluctuations.

KW - 2D materials

KW - defects

KW - electron beam

KW - electron-hole pairs

KW - field-effect transistor

KW - low-frequency noise

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U2 - 10.1002/admi.202102488

DO - 10.1002/admi.202102488

M3 - Article

AN - SCOPUS:85124495105

SN - 2196-7350

VL - 9

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

IS - 9

M1 - 2102488

ER -

Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications

Abstract

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