Defect engineering for 650 nm high-power AlGaInP laser diodes

D. S. Kim, K. C. Kim, Y. C. Shin, D. H. Kang, B. J. Kim, Y. M. Kim, Y. Park, Tae Geun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose, deep level transient spectroscopy (DLTS) measurements were carried out for each layer of the 650 nm band AlGaInP laser. By layer optimization at growth and annealing conditions, the laser diode was able operate stably and kink-free at high power over 220 mW at 70 °C. The characteristic temperatures (T0) were 212 K for 25-60 °C and 106 K over 60 °C.

Original languageEnglish
Pages (from-to)610-613
Number of pages4
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - 2006 Apr 1

Fingerprint

High power lasers
high power lasers
Semiconductor lasers
semiconductor lasers
engineering
Annealing
Defects
Deep level transient spectroscopy
annealing
Lasers
defects
lasers
optimization
spectroscopy
Temperature
temperature

Keywords

  • AlGaInP
  • Defects
  • DLTS
  • High-power laser

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Kim, D. S., Kim, K. C., Shin, Y. C., Kang, D. H., Kim, B. J., Kim, Y. M., ... Kim, T. G. (2006). Defect engineering for 650 nm high-power AlGaInP laser diodes. Physica B: Condensed Matter, 376-377(1), 610-613. https://doi.org/10.1016/j.physb.2005.12.154

Defect engineering for 650 nm high-power AlGaInP laser diodes. / Kim, D. S.; Kim, K. C.; Shin, Y. C.; Kang, D. H.; Kim, B. J.; Kim, Y. M.; Park, Y.; Kim, Tae Geun.

In: Physica B: Condensed Matter, Vol. 376-377, No. 1, 01.04.2006, p. 610-613.

Research output: Contribution to journalArticle

Kim, DS, Kim, KC, Shin, YC, Kang, DH, Kim, BJ, Kim, YM, Park, Y & Kim, TG 2006, 'Defect engineering for 650 nm high-power AlGaInP laser diodes', Physica B: Condensed Matter, vol. 376-377, no. 1, pp. 610-613. https://doi.org/10.1016/j.physb.2005.12.154
Kim DS, Kim KC, Shin YC, Kang DH, Kim BJ, Kim YM et al. Defect engineering for 650 nm high-power AlGaInP laser diodes. Physica B: Condensed Matter. 2006 Apr 1;376-377(1):610-613. https://doi.org/10.1016/j.physb.2005.12.154
Kim, D. S. ; Kim, K. C. ; Shin, Y. C. ; Kang, D. H. ; Kim, B. J. ; Kim, Y. M. ; Park, Y. ; Kim, Tae Geun. / Defect engineering for 650 nm high-power AlGaInP laser diodes. In: Physica B: Condensed Matter. 2006 ; Vol. 376-377, No. 1. pp. 610-613.
@article{936892300af64207b312517b97965701,
title = "Defect engineering for 650 nm high-power AlGaInP laser diodes",
abstract = "To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose, deep level transient spectroscopy (DLTS) measurements were carried out for each layer of the 650 nm band AlGaInP laser. By layer optimization at growth and annealing conditions, the laser diode was able operate stably and kink-free at high power over 220 mW at 70 °C. The characteristic temperatures (T0) were 212 K for 25-60 °C and 106 K over 60 °C.",
keywords = "AlGaInP, Defects, DLTS, High-power laser",
author = "Kim, {D. S.} and Kim, {K. C.} and Shin, {Y. C.} and Kang, {D. H.} and Kim, {B. J.} and Kim, {Y. M.} and Y. Park and Kim, {Tae Geun}",
year = "2006",
month = "4",
day = "1",
doi = "10.1016/j.physb.2005.12.154",
language = "English",
volume = "376-377",
pages = "610--613",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Defect engineering for 650 nm high-power AlGaInP laser diodes

AU - Kim, D. S.

AU - Kim, K. C.

AU - Shin, Y. C.

AU - Kang, D. H.

AU - Kim, B. J.

AU - Kim, Y. M.

AU - Park, Y.

AU - Kim, Tae Geun

PY - 2006/4/1

Y1 - 2006/4/1

N2 - To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose, deep level transient spectroscopy (DLTS) measurements were carried out for each layer of the 650 nm band AlGaInP laser. By layer optimization at growth and annealing conditions, the laser diode was able operate stably and kink-free at high power over 220 mW at 70 °C. The characteristic temperatures (T0) were 212 K for 25-60 °C and 106 K over 60 °C.

AB - To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose, deep level transient spectroscopy (DLTS) measurements were carried out for each layer of the 650 nm band AlGaInP laser. By layer optimization at growth and annealing conditions, the laser diode was able operate stably and kink-free at high power over 220 mW at 70 °C. The characteristic temperatures (T0) were 212 K for 25-60 °C and 106 K over 60 °C.

KW - AlGaInP

KW - Defects

KW - DLTS

KW - High-power laser

UR - http://www.scopus.com/inward/record.url?scp=33645153311&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645153311&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2005.12.154

DO - 10.1016/j.physb.2005.12.154

M3 - Article

AN - SCOPUS:33645153311

VL - 376-377

SP - 610

EP - 613

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1

ER -