Defect engineering for 650 nm high-power AlGaInP laser diodes

D. S. Kim, K. C. Kim, Y. C. Shin, D. H. Kang, B. J. Kim, Y. M. Kim, Y. Park, T. G. Kim

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose, deep level transient spectroscopy (DLTS) measurements were carried out for each layer of the 650 nm band AlGaInP laser. By layer optimization at growth and annealing conditions, the laser diode was able operate stably and kink-free at high power over 220 mW at 70 °C. The characteristic temperatures (T0) were 212 K for 25-60 °C and 106 K over 60 °C.

Original languageEnglish
Pages (from-to)610-613
Number of pages4
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - 2006 Apr 1
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: 2005 Jul 242005 Jul 29

Keywords

  • AlGaInP
  • DLTS
  • Defects
  • High-power laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Kim, D. S., Kim, K. C., Shin, Y. C., Kang, D. H., Kim, B. J., Kim, Y. M., Park, Y., & Kim, T. G. (2006). Defect engineering for 650 nm high-power AlGaInP laser diodes. Physica B: Condensed Matter, 376-377(1), 610-613. https://doi.org/10.1016/j.physb.2005.12.154