Defect engineering for high-power 780 nm AlGaAs laser diodes

D. S. Kim, W. C. Choi, G. W. Moon, K. Y. Jang, Tae Geun Kim, Yun Mo Sung

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Defect engineering is carried out to determine optimum growth conditions for highly reliable high-power 780 nm AlGaAs laser diodes (LDs) using deep level transient spectroscopy (DLTS). The DLTS results reveal that the defect density of the Al0.48Ga0.52As cladding layer depended heavily on growth temperature and AsH3 flow but that of the Al 0.1Ga0.9As active layer depended mostly on the growth rates of the active layer. As a result of layer optimization at growth condition by DLTS, a record high output power of 250 mW was obtained at an operating current as low as 129.6 mA under room temperature continuous wave (CW) operation.

Original languageEnglish
Pages (from-to)7319-7323
Number of pages5
JournalJournal of Materials Science
Volume41
Issue number22
DOIs
Publication statusPublished - 2006 Nov 1

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Deep level transient spectroscopy
aluminum gallium arsenides
Semiconductor lasers
semiconductor lasers
engineering
Defects
defects
Defect density
Growth temperature
spectroscopy
continuous radiation
optimization
output
room temperature
Temperature
temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Defect engineering for high-power 780 nm AlGaAs laser diodes. / Kim, D. S.; Choi, W. C.; Moon, G. W.; Jang, K. Y.; Kim, Tae Geun; Sung, Yun Mo.

In: Journal of Materials Science, Vol. 41, No. 22, 01.11.2006, p. 7319-7323.

Research output: Contribution to journalArticle

Kim, D. S. ; Choi, W. C. ; Moon, G. W. ; Jang, K. Y. ; Kim, Tae Geun ; Sung, Yun Mo. / Defect engineering for high-power 780 nm AlGaAs laser diodes. In: Journal of Materials Science. 2006 ; Vol. 41, No. 22. pp. 7319-7323.
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