Defect levels and thermomigration of Te precipitates in CdZnTe:Pb

Kihyun Kim, R. Gul, V. Carcelén, A. E. Bolotinkov, G. S. Carmarda, G. Yang, A. Hossain, Y. Cui, R. B. James, J. Hong, S. U. Kim

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Semi-insulating Cd0.9Zn0.1Te:Pb crystals were grown by the vertical Bridgman method. Measurements of the current deep level transient spectroscopy (I-DLTS) revealed three trap levels in this material. Unlike other compensating dopants, CdZnTe:Pb samples do not show any Cd-vacancies defects and A-center levels. We subjected them to temperature-gradient annealing in Cd overpressure at 490-717 °C, and recorded an exponential relationship between the annihilation time of Te precipitates and the annealing temperature. The energy resolution of an annealed CdZnTe:Pb detector, tested using a 137Cs radioactive source, gave an energy resolution of 2.5%.

Original languageEnglish
Pages (from-to)781-784
Number of pages4
JournalJournal of Crystal Growth
Volume312
Issue number6
DOIs
Publication statusPublished - 2010 Mar 1
Externally publishedYes

Fingerprint

thermomigration
Deep level transient spectroscopy
Precipitates
precipitates
Annealing
Defects
Crystal growth from melt
defects
Thermal gradients
Vacancies
annealing
Bridgman method
overpressure
Doping (additives)
Detectors
Crystals
temperature gradients
traps
energy
detectors

Keywords

  • A1. Doping
  • A1. Point defects
  • A2. Bridgman technique
  • B1. Cadmium compounds
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Kim, K., Gul, R., Carcelén, V., Bolotinkov, A. E., Carmarda, G. S., Yang, G., ... Kim, S. U. (2010). Defect levels and thermomigration of Te precipitates in CdZnTe:Pb. Journal of Crystal Growth, 312(6), 781-784. https://doi.org/10.1016/j.jcrysgro.2009.11.069

Defect levels and thermomigration of Te precipitates in CdZnTe:Pb. / Kim, Kihyun; Gul, R.; Carcelén, V.; Bolotinkov, A. E.; Carmarda, G. S.; Yang, G.; Hossain, A.; Cui, Y.; James, R. B.; Hong, J.; Kim, S. U.

In: Journal of Crystal Growth, Vol. 312, No. 6, 01.03.2010, p. 781-784.

Research output: Contribution to journalArticle

Kim, K, Gul, R, Carcelén, V, Bolotinkov, AE, Carmarda, GS, Yang, G, Hossain, A, Cui, Y, James, RB, Hong, J & Kim, SU 2010, 'Defect levels and thermomigration of Te precipitates in CdZnTe:Pb', Journal of Crystal Growth, vol. 312, no. 6, pp. 781-784. https://doi.org/10.1016/j.jcrysgro.2009.11.069
Kim K, Gul R, Carcelén V, Bolotinkov AE, Carmarda GS, Yang G et al. Defect levels and thermomigration of Te precipitates in CdZnTe:Pb. Journal of Crystal Growth. 2010 Mar 1;312(6):781-784. https://doi.org/10.1016/j.jcrysgro.2009.11.069
Kim, Kihyun ; Gul, R. ; Carcelén, V. ; Bolotinkov, A. E. ; Carmarda, G. S. ; Yang, G. ; Hossain, A. ; Cui, Y. ; James, R. B. ; Hong, J. ; Kim, S. U. / Defect levels and thermomigration of Te precipitates in CdZnTe:Pb. In: Journal of Crystal Growth. 2010 ; Vol. 312, No. 6. pp. 781-784.
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