Defect levels and thermomigration of Te precipitates in CdZnTe:Pb

K. H. Kim, R. Gul, V. Carcelén, A. E. Bolotinkov, G. S. Carmarda, G. Yang, A. Hossain, Y. Cui, R. B. James, J. Hong, S. U. Kim

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15 Citations (Scopus)

Abstract

Semi-insulating Cd0.9Zn0.1Te:Pb crystals were grown by the vertical Bridgman method. Measurements of the current deep level transient spectroscopy (I-DLTS) revealed three trap levels in this material. Unlike other compensating dopants, CdZnTe:Pb samples do not show any Cd-vacancies defects and A-center levels. We subjected them to temperature-gradient annealing in Cd overpressure at 490-717 °C, and recorded an exponential relationship between the annihilation time of Te precipitates and the annealing temperature. The energy resolution of an annealed CdZnTe:Pb detector, tested using a 137Cs radioactive source, gave an energy resolution of 2.5%.

Original languageEnglish
Pages (from-to)781-784
Number of pages4
JournalJournal of Crystal Growth
Volume312
Issue number6
DOIs
Publication statusPublished - 2010 Mar 1
Externally publishedYes

Keywords

  • A1. Doping
  • A1. Point defects
  • A2. Bridgman technique
  • B1. Cadmium compounds
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Kim, K. H., Gul, R., Carcelén, V., Bolotinkov, A. E., Carmarda, G. S., Yang, G., Hossain, A., Cui, Y., James, R. B., Hong, J., & Kim, S. U. (2010). Defect levels and thermomigration of Te precipitates in CdZnTe:Pb. Journal of Crystal Growth, 312(6), 781-784. https://doi.org/10.1016/j.jcrysgro.2009.11.069