Defect levels of semi-insulating CdMnTe:In crystals

Kihyun Kim, A. E. Bolotinikov, G. S. Camarda, A. Hossain, R. Gul, G. Yang, Y. Cui, J. Prochazka, J. Franc, J. Hong, R. B. James

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the trap-filling time, which are typical characteristics of dislocation-induced defects. We propose a new defect-trap model for indium-doped CMT crystals.

Original languageEnglish
Article number113715
JournalJournal of Applied Physics
Volume109
Issue number11
DOIs
Publication statusPublished - 2011 Jun 1
Externally publishedYes

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defects
traps
crystals
indium
photoluminescence
Bridgman method
electronics
doped crystals
grade
topography
synchrotrons
x ray diffraction
activation energy
electronic structure
scanning electron microscopy
detectors
electric potential
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kim, K., Bolotinikov, A. E., Camarda, G. S., Hossain, A., Gul, R., Yang, G., ... James, R. B. (2011). Defect levels of semi-insulating CdMnTe:In crystals. Journal of Applied Physics, 109(11), [113715]. https://doi.org/10.1063/1.3594715

Defect levels of semi-insulating CdMnTe:In crystals. / Kim, Kihyun; Bolotinikov, A. E.; Camarda, G. S.; Hossain, A.; Gul, R.; Yang, G.; Cui, Y.; Prochazka, J.; Franc, J.; Hong, J.; James, R. B.

In: Journal of Applied Physics, Vol. 109, No. 11, 113715, 01.06.2011.

Research output: Contribution to journalArticle

Kim, K, Bolotinikov, AE, Camarda, GS, Hossain, A, Gul, R, Yang, G, Cui, Y, Prochazka, J, Franc, J, Hong, J & James, RB 2011, 'Defect levels of semi-insulating CdMnTe:In crystals', Journal of Applied Physics, vol. 109, no. 11, 113715. https://doi.org/10.1063/1.3594715
Kim K, Bolotinikov AE, Camarda GS, Hossain A, Gul R, Yang G et al. Defect levels of semi-insulating CdMnTe:In crystals. Journal of Applied Physics. 2011 Jun 1;109(11). 113715. https://doi.org/10.1063/1.3594715
Kim, Kihyun ; Bolotinikov, A. E. ; Camarda, G. S. ; Hossain, A. ; Gul, R. ; Yang, G. ; Cui, Y. ; Prochazka, J. ; Franc, J. ; Hong, J. ; James, R. B. / Defect levels of semi-insulating CdMnTe:In crystals. In: Journal of Applied Physics. 2011 ; Vol. 109, No. 11.
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